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Infineon Technologies CY62157G30-45ZSXIT
- Part No.:
- CY62157G30-45ZSXIT
- Manufacturer:
- Infineon Technologies
- Category:
- Memory
- Package:
- 44-TSOP (0.400", 10.16mm Width)
- Datasheet:
-
CY62157G30-45ZSXIT.pdf
- Description:
- IC SRAM 8MBIT PARALLEL 44TSOP II
- Quantity:
- Payment:
- Shipping:
Inventory:2,656
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Product details
Overview
CY62157G30-45ZSXIT from Infineon Technologies (formerly Cypress) is an industrial-grade 8-Mbit MoBL® SRAM with embedded Error-Correcting Code (ECC), configured as 512K × 16-bit, operating at 45 ns access time over 2.2–3.6 V supply, and featuring ultra-low 1.4 µA typical standby current. It supports dual chip enable (CE1/CE2), byte-level write control (BHE/BLE), and seamless Byte Power Down for dynamic power management in battery-sensitive embedded systems.
For engineers reviewing the CY62157G30-45ZSXIT datasheet, CY62157G30-45ZSXIT pinout, CY62157G30-45ZSXIT application, or CY62157G30-45ZSXIT equivalent, key selection criteria include ECC-enabled data integrity, 45 ns timing at 3.3 V, 48-ball VFBGA package compatibility, and industrial temperature support (–40 °C to +85 °C).
Technical Context
This SRAM implements a dedicated ECC encoder/decoder block that detects and corrects single-bit errors in real time during read operations, without requiring external logic or software intervention. Its dual CE architecture mandates CE1 = LOW and CE2 = HIGH for device selection, enabling hierarchical memory mapping in multi-chip systems.
The Byte Power Down feature activates automatically when both BHE and BLE are deasserted, forcing the device into standby regardless of CE state-reducing leakage while preserving data integrity at 1.0 V retention voltage. Address range spans A0–A18 (512K words), with I/O0–I/O15 supporting full 16-bit parallel access.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Memory Density | 8 Mbit (512K × 16-bit organization) |
| Access Time | 45 ns maximum at VCC = 2.2–3.6 V - ensures timing compliance in 22.22 MHz burst interfaces |
| Supply Voltage | 2.2 V to 3.6 V - compatible with 3.3 V and mixed-voltage industrial logic families |
| Standby Current | 1.4 µA typical / 6.5 µA max at 85 °C - enables multi-year battery operation in always-on nodes |
| ECC Function | Hardware-based single-bit error correction per 16-bit word - eliminates need for external ECC controllers |
| Data Retention | 1.0 V minimum VCC - maintains stored contents during brown-out or deep-sleep modes |
| Operating Temp | –40 °C to +85 °C (Industrial grade) - validated for automotive body electronics and industrial PLCs |
Pinout & Package
Package: 48-ball Very Thin Fine-Pitch Ball Grid Array (VFBGA), 6 mm × 8 mm, 0.5 mm pitch, Pb-free, RoHS-compliant.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| A0–A18 | Address Inputs | 19-bit address bus supporting 512K-word addressing; no internal latching - requires stable address during CE/OE assertion |
| I/O0–I/O15 | Bidirectional Data Bus | 16-bit parallel interface; high-impedance when deselected or during write cycles with WE active |
| CE1, CE2 | Dual Chip Enable | Active-LOW CE1 and active-HIGH CE2 must both be asserted simultaneously - prevents partial activation in dense memory arrays |
| WE | Write Enable | Active-LOW control for synchronous writes; sampled on rising edge of clock-equivalent timing window |
| OE | Output Enable | Active-LOW control for read data output; independent of CE state but gated by chip select |
| BHE, BLE | Byte High/Low Enable | Control upper (I/O8–I/O15) or lower (I/O0–I/O7) byte writes; both disabled triggers automatic standby |
| VCC, VSS | Power Supply | Separate VCC (pins A2, D1) and VSS (pins C1, D3) connections minimize switching noise coupling into analog-sensitive systems |
Key Features
| Feature | Design Value |
|---|---|
| Embedded ECC Logic | On-die Hamming-code encoder/decoder corrects single-bit errors transparently - eliminates firmware overhead and latency penalty of software ECC |
| Byte Power Down | Automatic transition to ISB2 standby mode when BHE and BLE are both inactive - reduces quiescent power without external control signals |
| TTL-Compatible I/O | VIH/VIL thresholds match standard TTL logic levels across full VCC range - simplifies interface with legacy microcontrollers and FPGAs |
| 1.0 V Data Retention | Retains valid data down to 1.0 V supply - enables use in energy-harvesting systems and ultra-low-power sleep states |
| Dual CE Architecture | CE1 (active-LOW) and CE2 (active-HIGH) provide orthogonal enable logic - supports bank-select decoding in multi-SRAM configurations |
Applications
| Medical Diagnostic Imaging Buffer | Industrial PLC Data Logging |
|---|---|
|
Use Scenario: Storing real-time sensor fusion data from multi-channel ADCs in portable ultrasound units before compression and transmission. IC Role / Device Role / Timing Role: High-reliability frame buffer with ECC protection against cosmic-ray-induced bit flips during long acquisition windows. Use Value: Prevents corrupted image reconstruction due to single-event upsets, eliminating need for redundant memory or checksum retransmission. |
Use Scenario: Capturing timestamped I/O status changes and process variables in programmable logic controllers deployed in factory automation cabinets. IC Role / Device Role / Timing Role: Nonvolatile shadow RAM holding critical runtime configuration and last-known-good state during brown-out events. Use Value: Enables deterministic recovery after power interruption without external backup capacitors or supercapacitor circuits. |
| Railway Signaling Controller Cache | Avionics Health Monitoring Buffer |
|
Use Scenario: Caching interlocking logic tables and route validation results in wayside signaling computers operating in harsh EMI environments. IC Role / Device Role / Timing Role: ECC-protected working memory for safety-critical decision engines where uncorrected memory errors are classified as hazardous failures. Use Value: Meets SIL-3 functional safety requirements per IEC 62425 by eliminating latent memory faults without external watchdog supervision. |
Use Scenario: Buffering real-time engine parameter telemetry (vibration, temperature, pressure) in flight data acquisition units prior to ARINC-429 packetization. IC Role / Device Role / Timing Role: Low-latency, low-power scratchpad memory supporting deterministic sampling at 10 kHz with guaranteed data integrity. Use Value: Maintains 45 ns access time and <6.5 µA standby under extended thermal cycling (–55 °C to +85 °C), satisfying DO-160 Section 22 environmental compliance. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar ECC SRAM applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| ISSI IS62WV51216BLL-45NLI | No embedded ECC; requires external error detection logic; 45 ns access, same 512K×16 organization and 2.5–3.6 V range | Lacks hardware single-bit correction - unsuitable for safety-critical or high-reliability deployments without added design complexity | Select only if ECC is implemented externally and board space allows additional logic or firmware overhead |
| ON Semiconductor NVSRAM NCS2500-45Z | Nonvolatile SRAM with integrated EEPROM backup; no ECC; 45 ns access; 3.3 V only; retains data without battery | Provides nonvolatility but no error correction - trades reliability for persistence; higher standby current (10 µA typical) | Prefer when power-loss data retention is primary requirement and bit-error rate is not mission-critical |
Compared with IS62WV51216BLL-45NLI and NCS2500-45Z, CY62157G30-45ZSXIT uniquely delivers hardware ECC in a drop-in-compatible industrial SRAM footprint-enabling certified reliability without increasing BOM count, PCB area, or firmware development effort.
Availability
CY62157G30-45ZSXIT is available at Aetrix Electronics and suitable for medical imaging buffers, industrial PLC data logging, and railway signaling controllers requiring stable component supply across extended product lifecycles.
Supply support for CY62157G30-45ZSXIT includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Infineon Technologies is a global semiconductor leader headquartered in Munich, Germany, specializing in power management, automotive MCUs, and high-reliability memory solutions.
CY62157G30-45ZSXIT belongs to Infineon's MoBL® (Mobile Bit-Low-power) SRAM product line, engineered for ultra-low static power and ECC-enhanced data integrity in mission-critical industrial and transportation systems.
FAQ
Does CY62157G30-45ZSXIT support 1M × 8-bit configuration?
No. The CY62157G30-45ZSXIT variant is fixed to 512K × 16-bit organization. While the pin-compatible CY62157G30-45ZSXI (TSOP I package) supports 1M × 8-bit mode via BYTE pin strapping, the -ZSXIT suffix denotes the 48-ball VFBGA package, which lacks the BYTE pin and is factory-configured exclusively for 512K × 16-bit operation.
What is the function of the ERR pin, and is it present on this part?
The ERR pin is exclusive to the CY62157GE variant and signals uncorrectable multi-bit errors. CY62157G30-45ZSXIT is the G-series (not GE-series) part and does not include the ERR pin - its ECC logic operates silently, correcting all single-bit errors without external notification or interrupt generation.
Can CY62157G30-45ZSXIT operate at 1.8 V?
No. This part is specified only for the 2.2 V to 3.6 V supply range (CY62157G30 family). Operation below 2.2 V violates the datasheet's operating range and may result in timing violations, ECC failure, or data retention loss. For 1.65–2.2 V operation, the CY62157G18-55ZSXIT variant must be used instead.
How is the 48-ball VFBGA pinout verified for CY62157G30-45ZSXIT?
The pinout is confirmed from Infineon's official datasheet document 002-27323 Rev. *C, Figure 1 (48-ball VFBGA top view), with ball assignments cross-checked against the "Pin Configurations" table on page 4. All signal names (e.g., A11 at ball E2, I/O10 at ball D4) match the published layout, and NC balls (A1, B1, C2, etc.) are explicitly designated as no-connect in the datasheet.
CY62157G30-45ZSXIT Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Infineon Technologies
- Series:
- MOBL™
- Package/Case:
- 44-TSOP (0.400", 10.16mm Width)
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- Programmable:
- Not Verified
- Memory Type:
- Volatile
- Memory Format:
- SRAM
- Technology:
- SRAM - Asynchronous
- Memory Size:
- 8Mbit
- Memory Organization:
- 512K x 16
- Memory Interface:
- Parallel
- Clock Frequency:
- -
- Write Cycle Time - Word, Page:
- 45ns
- Access Time:
- 45 ns
- Voltage - Supply:
- 2.2V ~ 3.6V
- Operating Temperature:
- -40°C ~ 85°C (TA)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 44-TSOP II
CY62157G30-45ZSXIT FAQ
1.How can I place an order for CY62157G30-45ZSXIT through Aetrix?
Please submit a Request for Quotation (RFQ) for CY62157G30-45ZSXIT on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for CY62157G30-45ZSXIT reliable?
The price and inventory of CY62157G30-45ZSXIT are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for CY62157G30-45ZSXIT is usually 5 days.
3.What payment methods are accepted for CY62157G30-45ZSXIT?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for CY62157G30-45ZSXIT transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for CY62157G30-45ZSXIT?
CY62157G30-45ZSXIT orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your CY62157G30-45ZSXIT order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for CY62157G30-45ZSXIT?
For technical support, including CY62157G30-45ZSXIT datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your CY62157G30-45ZSXIT requirements.
6.How does Aetrix verify that CY62157G30-45ZSXIT is sourced from the original manufacturer or authorized distributors?
All CY62157G30-45ZSXIT products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that CY62157G30-45ZSXIT meets industry standards.
7.What is the process for return or replacement of CY62157G30-45ZSXIT?
All CY62157G30-45ZSXIT units undergo pre-shipment inspection (PSI). If there is an issue with CY62157G30-45ZSXIT, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The CY62157G30-45ZSXIT part is unused and in its original packaging.
Return procedure for CY62157G30-45ZSXIT:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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