Send an Inquiry

To receive a quote for your project, please fill in the following information, and we’ll get back to you promptly.

Name*
Company*
Email Address*
Phone/WhatsApp
Part Number*
Quantity*
Message
Submit Inventory List

Please fill in the following information, and we’ll get back to you promptly.

Name*
Company*
Email Address*
Phone/WhatsApp
Upload My List
Message

Infineon Technologies CY62157G30-45ZXA

Part No.:
CY62157G30-45ZXA
Manufacturer:
Infineon Technologies
Category:
Memory
Package:
48-TFSOP (0.724", 18.40mm Width)
Datasheet:
AetrixCY62157G30-45ZXA.pdf
Description:
IC SRAM 8MBIT PARALLEL 48TSOP I
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:4,588

Please send an inquiry. Send us your inquiry, and we will respond immediately.

Part Number
Quantity*
Price
Name*
Company
Email*
Comments

Product details

Overview

CY62157G30-45ZXA from Infineon Technologies (formerly Cypress) is an automotive-grade 8-Mbit (512K × 16-bit) CMOS static RAM with embedded single-bit error-correcting code (ECC), dual chip-enable architecture, 45 ns access time, and AEC-Q100 qualification for Automotive-A (–40 °C to +85 °C) operation. It operates across 2.2 V to 3.6 V supply, delivers 18 mA typical active current at fMAX, and supports byte-level write control via BHE/ BLE.

For engineers reviewing the CY62157G30-45ZXA datasheet, CY62157G30-45ZXA pinout, CY62157G30-45ZXA application, or CY62157G30-45ZXA equivalent, this device is selected for safety-critical automotive memory subsystems requiring ECC integrity, ultra-low standby power (1.4 µA typ), TTL-compatible I/O, and Pb-free 48-ball VFBGA packaging.

Technical Context

The CY62157G30-45ZXA implements a dedicated ECC encoder/decoder block integrated into the SRAM core, correcting single-bit errors on read without automatic write-back. Its dual chip-enable logic (CE1 LOW & CE2 HIGH) enables hierarchical memory mapping in multi-bank systems.

It features Byte Power Down: asserting both BHE and BLE inactive forces automatic transition to ISB1/ISB2 standby regardless of CE state-enabling dynamic per-byte power gating. Address range spans A0–A19 (20-bit), supporting full 512K-word addressing with no internal bank switching.

Key Specifications

Parameter Value and Actual Design Meaning
Memory Density 8 Mbit (512K words × 16-bit); provides 1 MB of word-accessible, non-refreshing volatile storage.
Access Time 45 ns max at VCC = 2.2–3.6 V; ensures deterministic timing for real-time automotive microcontroller interfaces.
ECC Function Single-bit error correction (SEC) with SER FIT rate < 0.1 FIT/Mb; detects and corrects bit flips in stored data without software intervention.
Standby Current 1.4 µA typical (ISB2), 6.5 µA max at VCC = 3.6 V; enables low-power sleep modes in ADAS ECUs and gateway modules.
Supply Voltage 2.2 V to 3.6 V; compatible with 3.3 V automotive power rails and tolerant of transient droop down to 2.2 V.
Operating Temperature –40 °C to +85 °C (Automotive-A grade); qualified per AEC-Q100 Rev G for under-hood and cabin control units.
I/O Interface TTL-compatible inputs/outputs; eliminates level-shifting requirements when interfacing with legacy MCU buses.

Pinout & Package

Package: 48-ball Very Thin Fine-Pitch Ball Grid Array (VFBGA), 5 mm × 6 mm, 0.5 mm pitch, Pb-free, RoHS-compliant.

Pin/Terminal Circuit Role Design Meaning
A0–A19 Address Inputs 20-bit address bus supporting full 512K-word linear addressing; no internal multiplexing or bank select required.
I/O0–I/O15 Bidirectional Data Bus 16-bit parallel interface; supports simultaneous read/write of full word or byte-selectable access via BHE/ BLE.
CE1, CE2 Dual Chip Enable Active-Low CE1 and Active-High CE2 must both be asserted for device selection; enables hierarchical memory decoding.
WE, OE Write Enable / Output Enable Asynchronous control: WE LOW initiates write; OE LOW enables output drivers during read; both high place I/O in HI-Z.
BHE, BLE Byte High/Low Enable BHE controls I/O8–I/O15; BLE controls I/O0–I/O7; both inactive triggers automatic Byte Power Down mode.
VCC, VSS Power Supply / Ground Single VCC rail (2.2–3.6 V); two VSS balls provide low-inductance return paths for noise-sensitive SRAM operation.

Key Features

Feature Design Value
Embedded SEC ECC Hardware-based single-bit error correction with no CPU overhead; meets ASIL-B data integrity requirements for memory subsystems.
Byte Power Down Automatic entry into ultra-low-power standby (ISB1/ISB2) when both BHE and BLE are deasserted-enabling per-byte power gating.
Dual Chip-Enable Logic CE1 (active-low) and CE2 (active-high) enable precise memory window selection in multi-SRAM systems without external decode logic.
AEC-Q100 Qualified Qualified to Automotive-A temperature grade (–40 °C to +85 °C) with full reliability testing including HTOL, TC, and ESD.
Pb-Free VFBGA Packaging 48-ball VFBGA (5 × 6 mm) supports automated SMT assembly and thermal performance suitable for automotive PCB layouts.

Applications

Advanced Driver Assistance Systems (ADAS) Automotive Gateway Modules

Use Scenario: Storing real-time sensor fusion buffers and radar preprocessing results in front-camera ECU.

IC Role / Device Role / Timing Role: Volatile working memory with ECC-protected data path between SoC and image signal processor.

Use Value: Prevents silent data corruption in safety-critical vision processing pipelines; 45 ns access enables sub-100 µs latency for frame buffering.

Use Scenario: Holding protocol translation tables and CAN/FlexRay message queues in vehicle communication gateways.

IC Role / Device Role / Timing Role: Shared SRAM for multi-protocol message buffering with hardware ECC ensuring integrity across bus bridges.

Use Value: Eliminates need for software checksum overhead; 1.4 µA standby current extends sleep-mode duration during vehicle ignition-off states.

Engine Control Units (ECU) Infotainment Head Units

Use Scenario: Caching real-time engine calibration maps and knock sensor history in gasoline/diesel ECUs.

IC Role / Device Role / Timing Role: Fast-access scratchpad memory for closed-loop combustion control algorithms running on 32-bit MCUs.

Use Value: 2.2–3.6 V operating range tolerates battery voltage fluctuations; AEC-Q100 qualification ensures reliability under under-hood thermal stress.

Use Scenario: Buffering audio DSP coefficients and UI rendering assets in head unit application processors.

IC Role / Device Role / Timing Role: Low-latency, ECC-secured memory for multimedia subsystems requiring deterministic access timing.

Use Value: TTL-compatible I/O simplifies interface to legacy audio SoCs; VFBGA package enables compact layout in space-constrained dashboards.

Equivalent & Alternatives

The following parts are listed as comparable options for similar automotive SRAM applications.

Alternative Part Technical Difference Application Difference Selection Advice
ISSI IS62WV51216BLL-45NLI No embedded ECC; 45 ns access, 2.5–3.6 V supply, –40 °C to +85 °C; 512K × 16-bit, 48-pin TSOP II. Lacks hardware SEC; requires external error detection or software ECC layer for functional safety compliance. Select when ECC is handled at system level and cost sensitivity outweighs ASIL-B memory integrity requirements.
ON Semiconductor NVSRAM N25S80A-45GQF Non-volatile SRAM (nvSRAM); 45 ns access, 2.7–3.6 V, –40 °C to +85 °C; retains data without backup battery. Provides data retention on power loss but higher standby current (15 µA typ) and no ECC correction capability. Select when power-fail data persistence is prioritized over real-time error correction and ultra-low standby power.

Compared with IS62WV51216BLL-45NLI and N25S80A-45GQF, CY62157G30-45ZXA uniquely combines hardware SEC ECC, sub-2 µA standby, and AEC-Q100 Automotive-A qualification-making it the only choice for ASIL-B-compliant memory where both integrity and ultra-low power are mandatory.

Availability

CY62157G30-45ZXA is available at Aetrix Electronics and suitable for advanced driver assistance systems (ADAS), automotive gateway modules, and engine control units (ECU) requiring stable component supply, long-term lifecycle support, and AEC-Q100-compliant memory solutions.

Supply support for CY62157G30-45ZXA includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a global semiconductor leader headquartered in Munich, Germany, specializing in power management, automotive ICs, and security solutions with strong vertical integration and automotive qualification expertise.

CY62157G30-45ZXA belongs to Infineon's MoBL® (Mobile Low-Power) SRAM product line, designed specifically for automotive and industrial applications demanding ultra-low standby power, ECC-enabled data integrity, and extended temperature reliability.

FAQ

Does CY62157G30-45ZXA support automatic error correction during read operations?

Yes. The device performs real-time single-bit error correction (SEC) on every read access using its integrated ECC encoder/decoder. Detected errors are corrected before data is driven onto the I/O bus. However, it does not perform automatic write-back after correction-corrupted bits remain uncorrected in the array unless rewritten by the host system.

What is the function of the BYTE pin mentioned in the TSOP I package documentation?

The BYTE pin exists only in the 48-pin TSOP I variant (not in the VFBGA ZXA package). When tied to VCC, it configures the device as a 512K × 16 SRAM; when tied to VSS, it operates as a 1M × 8 SRAM using A19 (pin 45) as the extra address line. This pin is absent and irrelevant for CY62157G30-45ZXA, which uses the 48-ball VFBGA footprint.

Can CY62157G30-45ZXA operate reliably at 2.2 V supply during cold-cranking conditions?

Yes. The device is fully specified for 2.2 V to 3.6 V operation across –40 °C to +85 °C. At 2.2 V and –40 °C, access time remains within 45 ns (per datasheet AC characteristics), and all DC parameters-including VIH/VIL thresholds and ICC-meet guaranteed limits, making it suitable for cold-cranking scenarios in automotive power domains.

Is the 48-ball VFBGA package of CY62157G30-45ZXA compatible with standard reflow profiles?

Yes. The Pb-free VFBGA package complies with IPC/JEDEC J-STD-020 moisture sensitivity level (MSL) 3 and is qualified for standard lead-free reflow profiles (peak temperature ≤ 260 °C, 20–40 sec above 217 °C). Board design must follow Infineon's recommended pad layout and stencil specifications to ensure solder joint reliability.

CY62157G30-45ZXA Specifications

Product attributes
Attribute value
Manufacturer:
Infineon Technologies
Series:
MOBL™
Package/Case:
48-TFSOP (0.724", 18.40mm Width)
Packaging:
Tray
Product Status:
Active
Programmable:
Not Verified
Memory Type:
Volatile
Memory Format:
SRAM
Technology:
SRAM - Asynchronous
Memory Size:
8Mbit
Memory Organization:
512K x 16
Memory Interface:
Parallel
Clock Frequency:
-
Write Cycle Time - Word, Page:
45ns
Access Time:
45 ns
Voltage - Supply:
2.2V ~ 3.6V
Operating Temperature:
-40°C ~ 85°C (TA)
Grade:
-
Qualification:
-
Mounting Type:
Surface Mount
Supplier Device Package:
48-TSOP I

CY62157G30-45ZXA FAQ

1.How can I place an order for CY62157G30-45ZXA through Aetrix?

Please submit a Request for Quotation (RFQ) for CY62157G30-45ZXA on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for CY62157G30-45ZXA reliable?

The price and inventory of CY62157G30-45ZXA are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for CY62157G30-45ZXA is usually 5 days.

3.What payment methods are accepted for CY62157G30-45ZXA?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for CY62157G30-45ZXA transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for CY62157G30-45ZXA?

CY62157G30-45ZXA orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your CY62157G30-45ZXA order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for CY62157G30-45ZXA?

For technical support, including CY62157G30-45ZXA datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your CY62157G30-45ZXA requirements.

6.How does Aetrix verify that CY62157G30-45ZXA is sourced from the original manufacturer or authorized distributors?

All CY62157G30-45ZXA products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that CY62157G30-45ZXA meets industry standards.

7.What is the process for return or replacement of CY62157G30-45ZXA?

All CY62157G30-45ZXA units undergo pre-shipment inspection (PSI). If there is an issue with CY62157G30-45ZXA, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The CY62157G30-45ZXA part is unused and in its original packaging.

Return procedure for CY62157G30-45ZXA:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

CY62157G30-45ZXA Tags

  • CY62157G30-45ZXA
  • CY62157G30-45ZXA PDF
  • CY62157G30-45ZXA Datasheet
  • CY62157G30-45ZXA Specifications
  • CY62157G30-45ZXA Images
  • Infineon Technologies
  • Infineon Technologies CY62157G30-45ZXA
  • Buy CY62157G30-45ZXA
  • CY62157G30-45ZXA Price
  • CY62157G30-45ZXA Distributor
  • CY62157G30-45ZXA Supplier
  • CY62157G30-45ZXA Wholesale
Related Products
M24C02-WMN6TP
M24C02-WMN6TP

STMicroelectronics

AT24C02C-XHM-T
AT24C02C-XHM-T

Microchip Technology

AT21CS01-STUM10-T
AT21CS01-STUM10-T

Microchip Technology

AT24C02C-SSHM-T
AT24C02C-SSHM-T

Microchip Technology

24LC01BT-I/OT
24LC01BT-I/OT

Microchip Technology

M24C02-FMC6TG
M24C02-FMC6TG

STMicroelectronics

AT24CS02-SSHM-T
AT24CS02-SSHM-T

Microchip Technology

93LC46BT-I/OT
93LC46BT-I/OT

Microchip Technology

AT24C04C-SSHM-T
AT24C04C-SSHM-T

Microchip Technology

24LC01BT-I/SN
24LC01BT-I/SN

Microchip Technology

24AA02UIDT-I/OT
24AA02UIDT-I/OT

Microchip Technology

AT24C08C-STUM-T
AT24C08C-STUM-T

Microchip Technology

Tech Hub

Search

Search

PRODUCT

PRODUCT

PHONE

PHONE

USER

USER