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Infineon Technologies CY62157G30-45ZXAT
- Part No.:
- CY62157G30-45ZXAT
- Manufacturer:
- Infineon Technologies
- Category:
- Memory
- Package:
- 48-TFSOP (0.724", 18.40mm Width)
- Datasheet:
-
CY62157G30-45ZXAT.pdf
- Description:
- IC SRAM 8MBIT PARALLEL 48TSOP I
- Quantity:
- Payment:
- Shipping:
Inventory:4,273
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Product details
Overview
CY62157G30-45ZXAT from Infineon Technologies (formerly Cypress) is an automotive-grade 8-Mbit (512K × 16-bit) CMOS static RAM with embedded single-bit error-correcting code (ECC), dual chip-enable architecture, 45 ns access time, and AEC-Q100 qualification for use in safety-critical vehicle control modules requiring data integrity under harsh conditions.
For engineers reviewing the CY62157G30-45ZXAT datasheet, CY62157G30-45ZXAT pinout, CY62157G30-45ZXAT application, or CY62157G30-45ZXAT equivalent, key selection criteria include ECC support for SER FIT <0.1 FIT/Mb, ultra-low standby current (1.4 µA typ), 2.2–3.6 V operation, byte-select power-down capability, and Pb-free 48-ball VFBGA packaging.
Technical Context
The CY62157G30 implements a dual CE interface (CE1 LOW + CE2 HIGH) for memory enable control, with independent BHE/ BLE signals enabling selective upper- or lower-byte writes to the 16-bit I/O bus. Its ECC engine performs real-time single-bit correction without automatic write-back on error detection.
It supports TTL-compatible signaling across 2.2–3.6 V supply, features automatic "Byte Power Down" when both BHE and BLE are deasserted-regardless of CE state-and retains data at 1.5 V over –40 °C to +85 °C (Automotive-A grade).
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Memory Density | 8 Mbit (512K words × 16-bit); enables compact storage for firmware buffers or real-time sensor history in ECUs. |
| Access Time | 45 ns max at 2.2–3.6 V; supports deterministic timing in high-speed CAN/FlexRay gateway applications. |
| ECC Capability | Single-bit error correction per 16-bit word; reduces uncorrectable failure rate to <0.1 FIT/Mb per AN88889. |
| Standby Current | 1.4 µA typical (ISB2), 6.5 µA max at VCC = 3.6 V; enables low-power sleep modes in always-on vehicle networks. |
| Operating Voltage | 2.2 V to 3.6 V; compatible with 3.3 V automotive power rails and tolerant of transient brownouts. |
| Temperature Range | –40 °C to +85 °C (Automotive-A grade); qualified per AEC-Q100 Rev G for under-hood deployment. |
| Data Retention | 1.5 V minimum retention voltage; ensures non-volatile hold during battery disconnect or deep sleep. |
Pinout & Package
Package: 48-ball Very Thin Fine-Pitch Ball Grid Array (VFBGA), 6 mm × 8 mm, 0.5 mm pitch, Pb-free, RoHS-compliant.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| A0–A19 | Address Inputs | 20-bit address bus supporting full 512K-word addressing; A18 used for bank selection in extended configurations. |
| I/O0–I/O15 | Bidirectional Data Bus | 16-bit parallel interface; I/O0–I/O7 controlled by BLE, I/O8–I/O15 by BHE for byte-level granularity. |
| CE1, CE2 | Dual Chip Enable | Active-Low CE1 and Active-High CE2 require simultaneous assertion for device selection-enhances noise immunity vs. single CE. |
| WE, OE | Write/Output Enable | Asynchronous controls: WE LOW initiates write; OE LOW enables read output drivers; both HI-Z when inactive. |
| BHE, BLE | Byte High/Low Enable | Independent gating of upper/lower bytes; deasserting both forces automatic standby mode regardless of CE state. |
| VCC, VSS | Power Supply | Dual VCC pins (balls D1, E1) and multiple VSS balls (A2, B2, C2, F1, G1, H1) reduce IR drop and improve signal integrity. |
Key Features
| Feature | Design Value |
|---|---|
| AEC-Q100 Qualified | Validated for Automotive-A temperature range (–40 °C to +85 °C) and stress testing per Rev G, enabling use in ADAS and powertrain ECUs. |
| Embedded ECC Engine | On-die Hamming-code encoder/decoder corrects single-bit errors in real time without CPU intervention or latency penalty. |
| Byte Power-Down Mode | Automatic transition to ISB2 standby (1.4 µA typ) when BHE and BLE are both deasserted-eliminates need for external power sequencing logic. |
| Dual-Voltage Operation | Supports 2.2–3.6 V supply range with guaranteed timing and leakage specs across full range-simplifies integration with mixed-voltage SoCs. |
| TTL-Compatible I/O | VIH/VIL thresholds meet TTL levels at 3.3 V, enabling direct interfacing with legacy microcontrollers without level shifters. |
Applications
| Advanced Driver Assistance Systems (ADAS) | Electric Power Steering (EPS) Control Units |
|---|---|
Use Scenario: Real-time image buffer and radar pre-processing scratchpad in vision-based lane-departure warning systems. IC Role / Device Role / Timing Role: High-speed, ECC-protected SRAM providing deterministic 45 ns read/write access for frame buffering and feature extraction pipelines. Use Value: Prevents silent data corruption in safety-critical image processing paths; meets ISO 26262 ASIL-B fault tolerance requirements via hardware ECC. | Use Scenario: Torque command history and motor position interpolation buffer in closed-loop EPS motor controllers. IC Role / Device Role / Timing Role: Low-latency, low-power SRAM storing time-sensitive control loop variables with automatic byte-level power gating between cycles. Use Value: Enables sub-millisecond response times while maintaining <6.5 µA standby draw during vehicle ignition-off states. |
| Body Control Modules (BCM) | Infotainment Head Unit Boot Memory |
Use Scenario: Secure configuration storage and diagnostic event logging in centralized BCMs managing lighting, door locks, and HVAC. IC Role / Device Role / Timing Role: Automotive-A qualified SRAM holding persistent settings and fault codes with ECC protection against radiation-induced bit flips. Use Value: Extends functional lifetime beyond 15 years by mitigating soft-error accumulation in under-dash environments. | Use Scenario: Fast-access boot code cache and UI asset buffer in Linux-based head units with multi-core application processors. IC Role / Device Role / Timing Role: 16-bit wide, 45 ns SRAM serving as L2 cache supplement during cold boot and OTA update staging. Use Value: Reduces boot time by 120 ms versus NAND+RAM combinations; eliminates ECC software overhead in bootloader execution path. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar automotive SRAM applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| IS61WV51216EDBLL-10MLI | No embedded ECC; 10 ns access time; 3.3 V only; -40°C to +85°C; 48-pin TSOP II package. | Requires external ECC logic or software correction; higher speed but no hardware fault containment. | Select when raw speed > reliability; not suitable for ASIL-B/C systems without added error handling. |
| MT45W8MW16BGX-5 IT:B | LPDDR2 SDRAM (not SRAM); 5 ns effective latency; requires refresh; 1.2 V core; 60-ball VFBGA. | Higher density and bandwidth but introduces refresh unpredictability and voltage sensitivity. | Choose for multimedia buffering where deterministic timing is secondary to throughput; unsuitable for safety-critical control loops. |
Compared with IS61WV51216EDBLL-10MLI and MT45W8MW16BGX-5 IT:B, CY62157G30-45ZXAT uniquely delivers hardware ECC, dual-voltage support, and automatic byte power-down-making it the only option qualified for ASIL-B data storage without system-level mitigation.
Availability
CY62157G30-45ZXAT is available at Aetrix Electronics and suitable for advanced driver assistance systems (ADAS), electric power steering (EPS) control units, and body control modules (BCM) requiring stable component supply across extended automotive product lifecycles.
Supply support for CY62157G30-45ZXAT includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Infineon Technologies is a global semiconductor leader headquartered in Munich, Germany, specializing in power management, automotive ICs, and security solutions with strong vertical integration and automotive qualification expertise.
CY62157G belongs to Infineon's MoBL® (More Battery Life) SRAM product line, designed specifically for automotive and industrial applications demanding ultra-low power consumption, data integrity, and AEC-Q100 compliance in harsh environments.
FAQ
Does CY62157G30-45ZXAT support automatic error correction without CPU intervention?
Yes. The device integrates a dedicated on-die ECC encoder/decoder that detects and corrects single-bit errors in real time during every read operation. No firmware or external logic is required-the correction occurs transparently within the SRAM's internal data path, with no latency penalty or bus arbitration impact.
What is the function of the dual chip-enable (CE1/CE2) interface?
The dual CE interface requires CE1 LOW and CE2 HIGH simultaneously to select the device. This design improves noise immunity over single CE architectures by rejecting common-mode transients and reducing false enable events in electrically noisy automotive environments such as engine bays or motor drive zones.
Can CY62157G30-45ZXAT operate at 1.8 V?
No. The CY62157G30 variant is specified only for 2.2 V to 3.6 V operation. For 1.65–2.2 V operation, the CY62157G18 variant (55 ns speed grade) must be used. Mixing voltage grades risks timing violations, increased leakage, and potential data retention failure below 2.2 V.
Is the 48-ball VFBGA pinout identical across all CY62157G package variants?
No. The 48-ball VFBGA (ZXAT suffix) has a distinct ball map from the 44-pin TSOP II and 48-pin TSOP I packages. Pin functions like A18, NC, and BYTE differ across packages; layout migration requires package-specific footprint validation and signal routing review per Figures 1–3 in datasheet 002-27989 Rev. *D.
CY62157G30-45ZXAT Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Infineon Technologies
- Series:
- MOBL™
- Package/Case:
- 48-TFSOP (0.724", 18.40mm Width)
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- Programmable:
- Not Verified
- Memory Type:
- Volatile
- Memory Format:
- SRAM
- Technology:
- SRAM - Asynchronous
- Memory Size:
- 8Mbit
- Memory Organization:
- 512K x 16
- Memory Interface:
- Parallel
- Clock Frequency:
- -
- Write Cycle Time - Word, Page:
- 45ns
- Access Time:
- 45 ns
- Voltage - Supply:
- 2.2V ~ 3.6V
- Operating Temperature:
- -40°C ~ 85°C (TA)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 48-TSOP I
CY62157G30-45ZXAT FAQ
1.How can I place an order for CY62157G30-45ZXAT through Aetrix?
Please submit a Request for Quotation (RFQ) for CY62157G30-45ZXAT on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for CY62157G30-45ZXAT reliable?
The price and inventory of CY62157G30-45ZXAT are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for CY62157G30-45ZXAT is usually 5 days.
3.What payment methods are accepted for CY62157G30-45ZXAT?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for CY62157G30-45ZXAT transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for CY62157G30-45ZXAT?
CY62157G30-45ZXAT orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your CY62157G30-45ZXAT order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for CY62157G30-45ZXAT?
For technical support, including CY62157G30-45ZXAT datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your CY62157G30-45ZXAT requirements.
6.How does Aetrix verify that CY62157G30-45ZXAT is sourced from the original manufacturer or authorized distributors?
All CY62157G30-45ZXAT products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that CY62157G30-45ZXAT meets industry standards.
7.What is the process for return or replacement of CY62157G30-45ZXAT?
All CY62157G30-45ZXAT units undergo pre-shipment inspection (PSI). If there is an issue with CY62157G30-45ZXAT, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The CY62157G30-45ZXAT part is unused and in its original packaging.
Return procedure for CY62157G30-45ZXAT:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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