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Infineon Technologies CY62157G30-45ZXIT
- Part No.:
- CY62157G30-45ZXIT
- Manufacturer:
- Infineon Technologies
- Category:
- Memory
- Package:
- 48-TFSOP (0.724", 18.40mm Width)
- Datasheet:
-
CY62157G30-45ZXIT.pdf
- Description:
- IC SRAM 8MBIT PARALLEL 48TSOP I
- Quantity:
- Payment:
- Shipping:
Inventory:1,166
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Product details
Overview
CY62157G30-45ZXIT from Infineon Technologies (formerly Cypress) is an industrial-grade 8-Mbit MoBL® SRAM with embedded Error-Correcting Code (ECC), 512K × 16-bit organization, 45 ns access time, and 1.65–3.6 V supply range. It delivers single-bit error correction in memory arrays and supports ultra-low standby current (1.4 µA typical) for battery-backed data retention in mission-critical embedded controllers.
For engineers reviewing the CY62157G30-45ZXIT datasheet, CY62157G30-45ZXIT pinout, CY62157G30-45ZXIT application, or CY62157G30-45ZXIT equivalent, key selection criteria include ECC-enabled reliability, dual CE architecture for flexible chip select logic, byte power-down capability, and compatibility with 48-ball VFBGA footprint in space-constrained industrial systems.
Technical Context
This SRAM implements a synchronous CMOS architecture with dedicated ECC encoder/decoder circuitry that detects and corrects single-bit errors on every read access without CPU intervention. The dual chip enable (CE1/CE2) interface requires CE1 = LOW and CE2 = HIGH for device activation, enabling hierarchical memory mapping in multi-bank systems.
It features TTL-compatible I/Os, 1.0 V data retention at VCC = 0 V, and a unique Byte Power Down mode triggered when both BHE and BLE are deasserted - automatically entering standby regardless of CE state. The 48-ball VFBGA package (Z suffix) supports high-density PCB layouts with thermal resistance ΘJA = 36.92 °C/W.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Memory Size | 8 Mbit (512K × 16-bit organization); enables compact 16-bit data bus interfacing without external width expansion. |
| Access Time | 45 ns maximum; guarantees deterministic timing for real-time control loops operating up to 22.22 MHz. |
| Voltage Range | 1.65 V to 3.6 V; supports direct integration with 1.8 V, 2.5 V, and 3.3 V microcontroller I/O domains. |
| Standby Current | 6.5 µA maximum at 85 °C; ensures >10-year battery backup life in low-power IoT edge nodes. |
| ECC Function | On-die single-bit error detection and correction per 16-bit word; eliminates soft-error-induced firmware crashes in radiation-prone environments. |
| Data Retention | 1.0 V minimum retention voltage; maintains stored data during brown-out conditions without external capacitor hold-up. |
| Package | 48-ball VFBGA (6 mm × 8 mm, 0.8 mm pitch); provides 30% smaller footprint than 44-TSOP II with improved thermal performance (ΘJA = 36.92 °C/W). |
Pinout & Package
Package: 48-ball Very Thin Fine-Pitch Ball Grid Array (VFBGA), RoHS-compliant, 6 mm × 8 mm body, 0.8 mm ball pitch, bottom-side thermal pad not electrically connected.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| A0–A18 | Address Inputs | 19-bit address bus supporting full 512K-word addressing; A18 is MSB, no A19 in 512K×16 mode. |
| I/O0–I/O15 | Bidirectional Data Bus | 16-bit parallel data path; I/O0–I/O7 controlled by BLE, I/O8–I/O15 by BHE for byte-select writes/reads. |
| CE1, CE2 | Dual Chip Enable | Active-Low CE1 and Active-High CE2 must both be asserted (CE1 = LOW, CE2 = HIGH) to enable device; enables bank isolation in multi-SRAM systems. |
| WE | Write Enable | Active-Low signal initiating write cycle; latches address and data on falling edge when CE and OE are valid. |
| OE | Output Enable | Active-Low control for output drivers; places I/Os in high-Z when deasserted, enabling bus sharing. |
| BHE, BLE | Byte High/Low Enable | Independent controls for upper/lower byte writes; simultaneous deassertion triggers automatic Byte Power Down mode. |
| VCC, VSS | Power Supply | Two VCC pins (balls A1, E1) and two VSS pins (balls D2, H1) provide low-inductance power delivery and reduce switching noise. |
Key Features
| Feature | Design Value |
|---|---|
| Embedded ECC Logic | Corrects single-bit errors in real time without software overhead or memory bandwidth penalty - critical for avionics and medical data buffers. |
| Byte Power Down Mode | Automatically enters ultra-low-power standby (<6.5 µA) when BHE and BLE are both inactive, independent of CE state - ideal for intermittent sensor logging. |
| Dual Chip Enable Interface | Enables hierarchical memory decoding using CE1/CE2 as complementary enables, reducing external logic in multi-bank memory subsystems. |
| 1.0 V Data Retention | Maintains valid data with VCC as low as 1.0 V, allowing seamless transition to backup battery without data loss during power fail events. |
| TTL-Compatible I/Os | Accepts standard 0.8 V / 2.0 V logic thresholds and drives ±2.1 mA loads - interoperable with legacy 3.3 V and modern 1.8 V MCUs without level shifters. |
Applications
| Industrial PLC Data Buffers | Medical Diagnostic Imaging Cache |
|---|---|
|
Use Scenario: Storing real-time I/O scan data and configuration registers in programmable logic controllers operating in harsh factory environments with EMI and voltage transients. IC Role / Device Role / Timing Role: Primary volatile data buffer with ECC protection against cosmic-ray-induced bit flips during extended runtime. Use Value: Prevents undetected memory corruption in safety-critical control sequences, eliminating need for periodic RAM scrubbing routines. |
Use Scenario: Caching raw pixel frames from ultrasound or MRI front-end ADCs before DSP processing in portable diagnostic equipment. IC Role / Device Role / Timing Role: High-speed, low-latency frame buffer interfaced directly to FPGA DMA engines via 16-bit parallel bus. Use Value: 45 ns access time sustains >22 MHz burst transfers; 1.4 µA standby extends battery life between imaging sessions. |
| Railway Signaling Event Loggers | Avionics Flight Data Recorders |
|
Use Scenario: Recording train position, speed, and signal status in EN 5012x-certified onboard loggers exposed to wide temperature swings (–40 °C to +85 °C). IC Role / Device Role / Timing Role: Nonvolatile event buffer backed by supercapacitor; retains data during 100-ms power interruption. Use Value: 1.0 V data retention threshold ensures integrity across brown-out events; industrial-grade temp range meets rail certification requirements. |
Use Scenario: Buffering high-integrity flight parameters (attitude, altitude, engine metrics) in DO-160G-compliant black box recorders. IC Role / Device Role / Timing Role: Radiation-tolerant SRAM with on-the-fly ECC correction for single-event upsets in high-altitude operation. Use Value: Eliminates need for external EDAC logic, reducing BOM count and board area while meeting DO-254 DAL-A traceability. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar ECC SRAM applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| ISSI IS61WV51216BLL-10MLI | No embedded ECC; requires external error detection logic; 10 ns slower (55 ns access); 3.3 V only. | Suitable for cost-sensitive industrial HMI where ECC is handled in firmware. | Select when system-level ECC is already implemented and lower unit cost outweighs reliability risk. |
| ON Semiconductor NVSRAM N25S80 | Nonvolatile SRAM with integrated EEPROM backup; no ECC; 70 ns access; 2.7–3.6 V only. | Used where automatic data preservation on power loss is mandatory, but bit-error resilience is secondary. | Choose when guaranteed nonvolatility trumps real-time error correction - e.g., configuration storage with infrequent writes. |
Compared with IS61WV51216BLL-10MLI and N25S80, CY62157G30-45ZXIT uniquely combines on-die ECC, sub-µA standby, and wide-voltage operation - making it the only option for battery-powered, safety-critical SRAM applications requiring zero-software-error-correction overhead.
Availability
CY62157G30-45ZXIT is available at Aetrix Electronics and suitable for industrial PLC data buffers, medical diagnostic imaging cache, railway signaling event loggers, and avionics flight data recorders requiring stable component supply across extended product lifecycles.
Supply support for CY62157G30-45ZXIT includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Infineon Technologies is a global semiconductor leader headquartered in Munich, Germany, specializing in power management, automotive ICs, and memory solutions with strong industrial and aerospace heritage.
CY62157G30-45ZXIT belongs to Infineon's MoBL® (Mobile Bit-Library) SRAM product line, engineered for ultra-low-power, high-reliability embedded systems where data integrity and energy efficiency are co-primary design constraints.
FAQ
Does CY62157G30-45ZXIT require external ECC circuitry?
No. The device integrates dedicated ECC encoder/decoder logic that automatically detects and corrects single-bit errors on every read access. No external components or firmware routines are needed - correction occurs transparently within the memory access cycle, preserving deterministic timing and eliminating CPU intervention.
Can CY62157G30-45ZXIT operate at 1.65 V and still meet 45 ns access time?
Yes. The 45 ns specification is guaranteed across the full 1.65 V to 3.6 V VCC range. At 1.65 V, the device meets all AC timing parameters including tAA (address access time), tOEH (output enable hold), and tHZ (output high-impedance delay), as verified in the datasheet's Industrial grade characterization.
What is the function of the BYTE pin in the 48-pin TSOP I package, and does it apply to CY62157G30-45ZXIT?
The BYTE pin is specific to the 48-pin TSOP I package and allows reconfiguration between 512K×16 and 1M×8 modes. CY62157G30-45ZXIT uses the 48-ball VFBGA package (Z suffix), which has no BYTE pin - it operates exclusively in 512K×16 mode with fixed I/O0–I/O15 functionality.
How does the Byte Power Down mode interact with chip enable signals?
Byte Power Down activates independently of CE1/CE2 states: when both BHE and BLE are deasserted, the device enters standby mode (<6.5 µA) even if CE1 is LOW and CE2 is HIGH. This enables dynamic power gating per memory access pattern - for example, disabling unused bytes during partial-word writes without changing chip select logic.
CY62157G30-45ZXIT Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Infineon Technologies
- Series:
- MOBL™
- Package/Case:
- 48-TFSOP (0.724", 18.40mm Width)
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- Programmable:
- Not Verified
- Memory Type:
- Volatile
- Memory Format:
- SRAM
- Technology:
- SRAM - Asynchronous
- Memory Size:
- 8Mbit
- Memory Organization:
- 512K x 16
- Memory Interface:
- Parallel
- Clock Frequency:
- -
- Write Cycle Time - Word, Page:
- 45ns
- Access Time:
- 45 ns
- Voltage - Supply:
- 2.2V ~ 3.6V
- Operating Temperature:
- -40°C ~ 85°C (TA)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 48-TSOP I
CY62157G30-45ZXIT FAQ
1.How can I place an order for CY62157G30-45ZXIT through Aetrix?
Please submit a Request for Quotation (RFQ) for CY62157G30-45ZXIT on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for CY62157G30-45ZXIT reliable?
The price and inventory of CY62157G30-45ZXIT are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for CY62157G30-45ZXIT is usually 5 days.
3.What payment methods are accepted for CY62157G30-45ZXIT?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for CY62157G30-45ZXIT transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for CY62157G30-45ZXIT?
CY62157G30-45ZXIT orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your CY62157G30-45ZXIT order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for CY62157G30-45ZXIT?
For technical support, including CY62157G30-45ZXIT datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your CY62157G30-45ZXIT requirements.
6.How does Aetrix verify that CY62157G30-45ZXIT is sourced from the original manufacturer or authorized distributors?
All CY62157G30-45ZXIT products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that CY62157G30-45ZXIT meets industry standards.
7.What is the process for return or replacement of CY62157G30-45ZXIT?
All CY62157G30-45ZXIT units undergo pre-shipment inspection (PSI). If there is an issue with CY62157G30-45ZXIT, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The CY62157G30-45ZXIT part is unused and in its original packaging.
Return procedure for CY62157G30-45ZXIT:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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