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Infineon Technologies CY62157GE30-45BVXI
- Part No.:
- CY62157GE30-45BVXI
- Manufacturer:
- Infineon Technologies
- Category:
- Memory
- Package:
- 48-VFBGA
- Datasheet:
-
CY62157GE30-45BVXI.pdf
- Description:
- IC SRAM 8MBIT PARALLEL 48VFBGA
- Quantity:
- Payment:
- Shipping:
Inventory:2,548
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Product details
Overview
CY62157GE30-45BVXI from Infineon Technologies (formerly Cypress) is an 8-Mbit MoBL® SRAM with embedded Error-Correcting Code (ECC), configured as 512K × 16-bit, operating at 45 ns access time over 2.2–3.6 V supply, and featuring ultra-low 1.4 µA typical standby current. It delivers single-bit error detection and correction in real time for mission-critical data buffers in industrial controllers and medical instrumentation.
For engineers reviewing the CY62157GE30-45BVXI datasheet, CY62157GE30-45BVXI pinout, CY62157GE30-45BVXI application, or CY62157GE30-45BVXI equivalent, key selection criteria include ECC-enabled reliability, dual CE architecture, byte-select power-down capability, and compatibility with 48-ball VFBGA footprint in space-constrained embedded systems.
Technical Context
This SRAM implements a dedicated ECC encoder/decoder block that operates transparently during read/write cycles, correcting single-bit errors on-the-fly without CPU intervention. Its dual chip enable (CE1 LOW / CE2 HIGH) logic enforces strict address decoding control and eliminates partial activation risks in multi-SRAM memory maps.
The Byte Power Down feature activates automatically when both BHE and BLE are deasserted, forcing the device into ISB2 standby mode regardless of CE state-enabling dynamic per-byte power gating in burst-access firmware routines. The 48-ball VFBGA package supports 0.8 mm ball pitch and exposes all 19 address lines (A0–A18), 16 bidirectional I/Os, and dedicated ERR output for error status reporting.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Memory Density | 8 Mbit (512K × 16-bit organization) |
| Access Time | 45 ns maximum - ensures timing compliance with 22.22 MHz bus clocks in industrial microcontroller interfaces |
| VCC Range | 2.2 V to 3.6 V - compatible with 3.3 V and mixed-voltage SoC domains without level-shifting |
| Standby Current | 1.4 µA typical / 6.5 µA max at 85 °C - enables >10-year battery-backed retention in portable diagnostics equipment |
| ECC Function | Single-bit error correction + double-bit error detection per 16-bit word - reduces uncorrectable failure rate by 10⁴× vs. standard SRAM |
| Data Retention | 1.0 V minimum VCC - maintains stored data during brown-out conditions down to critical low-voltage thresholds |
| Package | 48-ball VFBGA (7.0 × 7.0 × 0.75 mm, 0.8 mm pitch) - supports high-density PCB layouts with thermal resistance ΘJA = 36.92 °C/W |
Pinout & Package
Package: 48-ball Very Thin Fine-Pitch Ball Grid Array (VFBGA), RoHS-compliant, 7.0 mm × 7.0 mm body, 0.8 mm ball pitch, 0.75 mm height.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| A0–A18 | Address Inputs | 19-bit address bus supporting full 512K-word addressing; A18 enables highest row selection |
| I/O0–I/O15 | Bidirectional Data Bus | 16-bit parallel interface; supports byte-wide reads/writes via BHE/BLE control |
| CE1, CE2 | Dual Chip Enable | Active-Low CE1 and Active-High CE2 must both be asserted for device selection - prevents spurious activation |
| WE | Write Enable | Low-active signal controlling write cycle initiation; synchronized with address and data setup/hold |
| OE | Output Enable | Low-active signal enabling I/O pins to drive read data; high-Z when deasserted |
| BHE, BLE | Byte High/Low Enable | BHE controls I/O8–I/O15; BLE controls I/O0–I/O7; both disable → automatic standby entry |
| ERR | Error Flag Output | Open-drain active-low signal pulsed when single-bit error corrected or double-bit error detected |
| VCC, VSS | Power Supply | Two VCC pins (balls A1, E4) and two VSS pins (balls D1, C5) provide low-impedance decoupling paths |
Key Features
| Feature | Design Value |
|---|---|
| Embedded ECC Logic | Hardware-accelerated single-bit correction per 16-bit word, eliminating software overhead and latency penalties |
| Byte Power Down | Automatic transition to ISB2 standby when BHE/ BLE both inactive - enables firmware-controlled per-byte energy gating |
| Dual Chip Enable Architecture | CE1/CE2 logic prevents partial decode glitches and ensures deterministic chip select timing in multi-SRAM systems |
| TTL-Compatible I/O | VIH/VIL thresholds meet 3.3 V TTL levels - interoperable with legacy microcontrollers without external translators |
| 1.0 V Data Retention | Maintains valid memory contents during deep sleep or brown-out events below normal operating voltage |
Applications
| Industrial PLC Memory Buffer | Medical Diagnostic Data Cache |
|---|---|
|
Use Scenario: Real-time buffering of sensor acquisition streams in programmable logic controllers with deterministic scan-cycle deadlines. IC Role / Device Role / Timing Role: Primary working memory holding I/O image tables and ladder logic variables; accessed synchronously at 22.22 MHz with 45 ns timing margin. Use Value: ECC prevents silent data corruption in long-duration control loops, avoiding catastrophic misoperation due to bit flips in safety-critical registers. |
Use Scenario: Temporary storage of high-resolution imaging frames during ultrasound or MRI preprocessing before DRAM transfer. IC Role / Device Role / Timing Role: Low-latency scratchpad memory interfaced directly to FPGA-based image pipelines; supports burst reads with byte-enable granularity. Use Value: 1.4 µA standby current extends battery life in portable diagnostic units; 1.0 V retention sustains data integrity during power transitions. |
| Avionics Flight Data Recorder | Railway Signaling Controller |
|
Use Scenario: Storing timestamped flight parameters (altitude, attitude, engine telemetry) with tamper-proof integrity verification. IC Role / Device Role / Timing Role: ECC-protected nonvolatile shadow RAM holding last 30 seconds of critical telemetry; refreshed continuously during operation. Use Value: ERR output feeds watchdog logic to trigger fault logging upon detected/corrected errors - satisfying DO-254 traceability requirements. |
Use Scenario: Holding interlocking logic states and track occupancy flags in EN 5012x-certified signaling cabinets operating at –40 °C to +85 °C. IC Role / Device Role / Timing Role: Industrial-grade SRAM providing deterministic read/write response under EMI-heavy rail environments with dual CE isolation. Use Value: Dual VCC/VSS pairs and low ΘJA (36.92 °C/W) ensure thermal stability in sealed enclosures without forced air cooling. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar ECC SRAM applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| ISSI IS62WV51216BLL-45NLI | No embedded ECC; requires external error handling or software correction; 45 ns speed, same 512K × 16 organization | Suitable only where system-level ECC is implemented in FPGA or processor; lacks hardware ERR flag | Select when cost sensitivity outweighs reliability requirements and host processor can manage error detection |
| Microchip 23LCV512-I/P | Serial SPI interface (not parallel); 512 Kbit density (1/16th capacity); no ECC; 2.5–5.5 V range | Used in low-pin-count, low-bandwidth contexts (e.g., configuration storage), not real-time data buffering | Choose only for space-constrained designs where serial interface suffices and ECC is unnecessary |
Compared with IS62WV51216BLL-45NLI and 23LCV512-I/P, CY62157GE30-45BVXI uniquely delivers hardware ECC, parallel 16-bit bandwidth, and sub-µA standby in a single monolithic VFBGA package-making it irreplaceable for deterministic, safety-aware memory subsystems.
Availability
CY62157GE30-45BVXI is available at Aetrix Electronics and suitable for industrial PLC memory buffers, medical diagnostic data caches, and avionics flight data recorders requiring stable component supply across extended product lifecycles.
Supply support for CY62157GE30-45BVXI includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Infineon Technologies is a global semiconductor leader headquartered in Munich, Germany, delivering power systems, sensors, and memory solutions for industrial, automotive, and IoT applications.
CY62157GE belongs to Infineon's MoBL® (Mobile Bitline) SRAM product line, engineered specifically for ultra-low-power, high-reliability embedded memory in harsh-environment applications demanding ECC integrity and extended temperature operation.
FAQ
Does CY62157GE30-45BVXI support 1M × 8-bit configuration?
No - CY62157GE30-45BVXI is factory-configured as 512K × 16-bit with fixed ECC logic mapped to 16-bit words. The 1M × 8-bit mode applies only to the CY62157G variant in 48-pin TSOP I package, where BYTE pin reconfiguration enables alternate addressing; this VFBGA variant lacks the BYTE pin and does not support that mode.
What is the function of the ERR pin, and how is it electrically driven?
The ERR pin is an open-drain, active-low output that pulses low for one clock cycle upon successful single-bit correction or asserts continuously during double-bit error detection. It requires an external pull-up resistor (typically 4.7 kΩ to VCC) and interfaces directly with FPGA interrupt inputs or microcontroller GPIOs for real-time error logging.
Can CE1 and CE2 be tied together for simplified control?
No - CE1 and CE2 have opposite polarity (CE1 active-low, CE2 active-high) and must be driven independently to satisfy the dual-enable requirement. Tying them together violates the functional specification and may cause undefined behavior, including partial activation or increased standby current due to internal contention.
Is the 48-ball VFBGA footprint compatible with standard reflow profiles?
Yes - the CY62157GE30-45BVXI VFBGA package complies with IPC/JEDEC J-STD-020D moisture sensitivity level 3 and supports standard lead-free reflow profiles (peak 260 °C, 60-second duration above 217 °C). Board layout must follow Infineon's recommended pad stack (0.35 mm diameter, 0.55 mm solder mask opening) for reliable solder joint formation.
CY62157GE30-45BVXI Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Infineon Technologies
- Series:
- MOBL™
- Package/Case:
- 48-VFBGA
- Packaging:
- Tray
- Product Status:
- Active
- Programmable:
- Not Verified
- Memory Type:
- Volatile
- Memory Format:
- SRAM
- Technology:
- SRAM - Asynchronous
- Memory Size:
- 8Mbit
- Memory Organization:
- 512K x 16
- Memory Interface:
- Parallel
- Clock Frequency:
- -
- Write Cycle Time - Word, Page:
- 45ns
- Access Time:
- 45 ns
- Voltage - Supply:
- 2.2V ~ 3.6V
- Operating Temperature:
- -40°C ~ 85°C (TA)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 48-VFBGA (6x8)
CY62157GE30-45BVXI FAQ
1.How can I place an order for CY62157GE30-45BVXI through Aetrix?
Please submit a Request for Quotation (RFQ) for CY62157GE30-45BVXI on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for CY62157GE30-45BVXI reliable?
The price and inventory of CY62157GE30-45BVXI are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for CY62157GE30-45BVXI is usually 5 days.
3.What payment methods are accepted for CY62157GE30-45BVXI?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for CY62157GE30-45BVXI transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for CY62157GE30-45BVXI?
CY62157GE30-45BVXI orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your CY62157GE30-45BVXI order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for CY62157GE30-45BVXI?
For technical support, including CY62157GE30-45BVXI datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your CY62157GE30-45BVXI requirements.
6.How does Aetrix verify that CY62157GE30-45BVXI is sourced from the original manufacturer or authorized distributors?
All CY62157GE30-45BVXI products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that CY62157GE30-45BVXI meets industry standards.
7.What is the process for return or replacement of CY62157GE30-45BVXI?
All CY62157GE30-45BVXI units undergo pre-shipment inspection (PSI). If there is an issue with CY62157GE30-45BVXI, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The CY62157GE30-45BVXI part is unused and in its original packaging.
Return procedure for CY62157GE30-45BVXI:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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