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Infineon Technologies CY62157GE30-45BVXIT
- Part No.:
- CY62157GE30-45BVXIT
- Manufacturer:
- Infineon Technologies
- Category:
- Memory
- Package:
- 48-VFBGA
- Datasheet:
-
CY62157GE30-45BVXIT.pdf
- Description:
- IC SRAM 8MBIT PARALLEL 48VFBGA
- Quantity:
- Payment:
- Shipping:
Inventory:3,174
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Product details
Overview
CY62157GE30-45BVXIT from Infineon Technologies (formerly Cypress) is a MoBL® 8-Mbit (512K × 16-bit) CMOS static RAM with embedded Error-Correcting Code (ECC), operating across 2.2 V–3.6 V, delivering 45 ns access time, 1.4 µA typical standby current, and TTL-compatible I/Os. It serves as a high-reliability data buffer in industrial controllers requiring single-bit error correction and low-power retention.
For engineers reviewing the CY62157GE30-45BVXIT datasheet, CY62157GE30-45BVXIT pinout, CY62157GE30-45BVXIT application, or CY62157GE30-45BVXIT equivalent, key selection criteria include ECC-enabled memory integrity, dual CE architecture for hierarchical memory mapping, byte-selectable power-down behavior, and Pb-free 48-ball VFBGA packaging for space-constrained embedded systems.
Technical Context
This SRAM integrates on-die ECC encoding/decoding logic that detects and corrects single-bit errors in real time during read operations, without external logic or software overhead. Its dual chip enable (CE1 LOW / CE2 HIGH) architecture enables precise bank selection in multi-SRAM systems.
The Byte Power Down feature activates automatically when both BHE and BLE are deasserted, forcing the device into ultra-low ISB2 standby mode (≤6.5 µA) independent of CE state-critical for intermittent-data-acquisition nodes. Address range spans A0–A18 (512K words), with I/O0–I/O15 supporting full 16-bit parallel access or independent byte writes via BHE/ BLE control.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Memory Density | 8 Mbit (512K × 16-bit organization), enabling compact storage of firmware tables or sensor buffers without external address multiplexing. |
| Access Time | 45 ns at VCC = 2.2–3.6 V, supporting real-time data logging in PLC scan cycles ≤22.22 MHz. |
| Supply Voltage | 2.2 V to 3.6 V, compatible with modern 3.3 V and mixed-voltage industrial backplanes. |
| Standby Current | Max 6.5 µA at 85 °C, allowing >1-year battery-backed operation in remote telemetry nodes. |
| ECC Function | On-chip single-bit error detection and correction per 16-bit word, eliminating soft-error-induced crashes in mission-critical control loops. |
| Data Retention | 1.0 V minimum retention voltage, permitting graceful shutdown and fast wake-up from deep sleep modes. |
| I/O Interface | TTL-compatible inputs/outputs with VIH ≥2.0 V and VOL ≤0.4 V at 3.6 V, ensuring interoperability with legacy microcontrollers and FPGAs. |
Pinout & Package
Package: 48-ball Very Thin Fine-Pitch Ball Grid Array (VFBGA), 6 mm × 8 mm, 0.5 mm pitch, Pb-free, RoHS-compliant.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| A0–A18 | Address Inputs | 19-bit address bus supporting full 512K-word addressing; no multiplexing required. |
| I/O0–I/O15 | Bidirectional Data Bus | 16-bit parallel interface; I/O0–I/O7 controlled by BLE, I/O8–I/O15 by BHE for byte-level granularity. |
| CE1, CE2 | Dual Chip Enable | Active-Low CE1 and Active-High CE2 must both be asserted for device selection-enables hierarchical memory decoding. |
| WE | Write Enable | Low-active signal initiating write cycle; synchronous with address and data setup/hold timing. |
| OE | Output Enable | Controls output drivers only; does not affect internal array access-allows read-modify-write sequences. |
| BHE, BLE | Byte High/Low Enable | Gate upper/lower byte writes or reads; simultaneous deassertion triggers automatic standby mode. |
| VCC, VSS | Power Supply | Single 2.2–3.6 V supply; two VCC and two VSS balls provide low-impedance decoupling paths. |
| ERR | Error Flag Output | Open-drain active-low signal pulsed when uncorrectable multi-bit error detected-connects directly to MCU interrupt pin. |
Key Features
| Feature | Design Value |
|---|---|
| Embedded ECC Logic | Hardware-based single-bit error correction per 16-bit word eliminates need for external ECC controller or software overhead. |
| Byte Power Down | Automatic transition to ISB2 ≤6.5 µA when BHE and BLE are both inactive-no software or external control required. |
| Dual Chip Enable Architecture | CE1/CE2 pairing allows precise bank isolation in multi-SRAM systems, reducing address decode complexity. |
| 1.0 V Data Retention | Retains valid data down to 1.0 V supply, enabling safe suspend-to-RAM during brown-out conditions. |
| Pb-Free VFBGA Packaging | 48-ball VFBGA (6 × 8 mm) supports high-density PCB layouts and automated reflow assembly per IPC-J-STD-020. |
Applications
| Industrial PLC Data Buffer | Medical Sensor Data Logger |
|---|---|
|
Use Scenario: Storing real-time analog input samples and control loop outputs in programmable logic controllers with deterministic scan cycles. IC Role / Device Role / Timing Role: Primary working memory holding volatile process variables; accessed at 22.22 MHz with 45 ns latency. Use Value: ECC prevents silent data corruption from cosmic rays in factory-floor environments, avoiding undetected control faults. |
Use Scenario: Capturing high-resolution ECG waveforms in portable diagnostic devices powered by coin-cell batteries. IC Role / Device Role / Timing Role: Low-power SRAM buffer between ADC and Bluetooth LE transmitter; enters Byte Power Down between sample bursts. Use Value: 1.4 µA standby current extends battery life beyond 12 months while maintaining data integrity during sleep. |
| Railway Signaling Controller | Avionics Health Monitor |
|
Use Scenario: Holding configuration registers and fault history logs in EN 5012x-certified signaling hardware exposed to wide temperature swings. IC Role / Device Role / Timing Role: Nonvolatile shadow memory backed by external backup capacitor; retains data at –40 °C to +85 °C. Use Value: 1.0 V data retention margin ensures reliable recovery after brief power interruptions during train acceleration/deceleration. |
Use Scenario: Logging flight-critical subsystem status (hydraulics, environmental controls) in DO-160G-compliant avionics units. IC Role / Device Role / Timing Role: ECC-protected scratchpad memory for real-time health computation; ERR pin feeds system watchdog circuitry. Use Value: ERR flag provides immediate hardware-level notification of multi-bit errors-enabling fail-safe shutdown before corrupted data propagates. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar ECC SRAM applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| ISSI IS62WV51216BLL-45NLI | No integrated ECC; requires external error handling or software correction; 45 ns speed, same 512K×16 density and 2.5–3.6 V range. | Suitable for cost-sensitive designs where ECC is managed at firmware level or not required. | Select when ECC is optional and board space permits external logic or SW overhead. |
| ON Semiconductor NVSRAM N25S80-45GFT | Nonvolatile SRAM with EEPROM backup; no ECC; 45 ns access; 1M×8 organization (not pin-compatible). | Used where power-loss data persistence is prioritized over error correction during active operation. | Choose when data retention without external backup capacitor is mandatory, and 16-bit bus width is negotiable. |
Compared with IS62WV51216BLL-45NLI and N25S80-45GFT, CY62157GE30-45BVXIT uniquely delivers hardware ECC within identical speed/power envelope-eliminating firmware latency and reliability risk in safety-critical memory paths.
Availability
CY62157GE30-45BVXIT is available at Aetrix Electronics and suitable for industrial automation, medical diagnostics, and rail signaling applications requiring stable component supply, long-term lifecycle support, and guaranteed Pb-free compliance.
Supply support for CY62157GE30-45BVXIT includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Infineon Technologies is a global semiconductor leader headquartered in Munich, Germany, specializing in power management, automotive ICs, and memory solutions for industrial and mission-critical systems.
CY62157GE belongs to Infineon's MoBL® (Mobile Binary Logic) SRAM product line, engineered for ultra-low-power, high-reliability embedded memory in space- and energy-constrained environments.
FAQ
Does CY62157GE30-45BVXIT require external ECC circuitry?
No. The device integrates dedicated on-die ECC encoder and decoder logic that automatically corrects single-bit errors during every read operation. No external components, FPGA logic, or software routines are needed-correction occurs transparently within the 45 ns access window.
What is the function of the ERR pin on CY62157GE30-45BVXIT?
The ERR pin is an open-drain, active-low output that pulses low when the internal ECC logic detects an uncorrectable multi-bit error in the accessed word. It is designed to connect directly to a microcontroller interrupt input, enabling immediate fault containment without polling or delay.
Can CY62157GE30-45BVXIT operate at 1.8 V?
No. This specific variant (CY62157GE30-45BVXIT) is rated for 2.2 V to 3.6 V only. For 1.65–2.2 V operation, the CY62157G18 variant (55 ns speed) must be used-voltage range and speed grade are fixed per part number and not interchangeable.
How does Byte Power Down differ from standard chip disable?
Standard chip disable (via CE1/CE2) places I/Os in high-Z but retains full array power. Byte Power Down activates when both BHE and BLE are deasserted-even if CE1/CE2 remain active-shutting down internal array circuitry to achieve ≤6.5 µA ISB2, reducing dynamic leakage significantly beyond standard standby.
CY62157GE30-45BVXIT Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Infineon Technologies
- Series:
- MOBL™
- Package/Case:
- 48-VFBGA
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- Programmable:
- Not Verified
- Memory Type:
- Volatile
- Memory Format:
- SRAM
- Technology:
- SRAM - Asynchronous
- Memory Size:
- 8Mbit
- Memory Organization:
- 512K x 16
- Memory Interface:
- Parallel
- Clock Frequency:
- -
- Write Cycle Time - Word, Page:
- 45ns
- Access Time:
- 45 ns
- Voltage - Supply:
- 2.2V ~ 3.6V
- Operating Temperature:
- -40°C ~ 85°C (TA)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 48-VFBGA (6x8)
CY62157GE30-45BVXIT FAQ
1.How can I place an order for CY62157GE30-45BVXIT through Aetrix?
Please submit a Request for Quotation (RFQ) for CY62157GE30-45BVXIT on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for CY62157GE30-45BVXIT reliable?
The price and inventory of CY62157GE30-45BVXIT are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for CY62157GE30-45BVXIT is usually 5 days.
3.What payment methods are accepted for CY62157GE30-45BVXIT?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for CY62157GE30-45BVXIT transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for CY62157GE30-45BVXIT?
CY62157GE30-45BVXIT orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your CY62157GE30-45BVXIT order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for CY62157GE30-45BVXIT?
For technical support, including CY62157GE30-45BVXIT datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your CY62157GE30-45BVXIT requirements.
6.How does Aetrix verify that CY62157GE30-45BVXIT is sourced from the original manufacturer or authorized distributors?
All CY62157GE30-45BVXIT products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that CY62157GE30-45BVXIT meets industry standards.
7.What is the process for return or replacement of CY62157GE30-45BVXIT?
All CY62157GE30-45BVXIT units undergo pre-shipment inspection (PSI). If there is an issue with CY62157GE30-45BVXIT, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The CY62157GE30-45BVXIT part is unused and in its original packaging.
Return procedure for CY62157GE30-45BVXIT:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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