My Inquiry
My Account
Infineon Technologies CY62157GE30-45ZXI
- Part No.:
- CY62157GE30-45ZXI
- Manufacturer:
- Infineon Technologies
- Category:
- Memory
- Package:
- 48-TFSOP (0.724", 18.40mm Width)
- Datasheet:
-
CY62157GE30-45ZXI.pdf
- Description:
- IC SRAM 8MBIT PARALLEL 48TSOP I
- Quantity:
- Payment:
- Shipping:
Inventory:4,937
Please send an inquiry. Send us your inquiry, and we will respond immediately.
Product details
Overview
CY62157GE30-45ZXI from Infineon Technologies (formerly Cypress) is an 8-Mbit MoBL® SRAM with embedded Error-Correcting Code (ECC), organized as 512K × 16 bits, operating at 45 ns access time over 2.2–3.6 V supply, featuring ultra-low 1.4 µA typical standby current and TTL-compatible I/Os. It serves in industrial control systems requiring reliable data retention and single-bit error correction during operation.
For engineers reviewing the CY62157GE30-45ZXI datasheet, CY62157GE30-45ZXI pinout, CY62157GE30-45ZXI application, or CY62157GE30-45ZXI equivalent, this page delivers verified package mapping (48-ball VFBGA), ECC-enabled memory architecture, dual CE interface timing, byte power-down behavior, and validated alternatives for industrial SRAM replacement.
Technical Context
This SRAM implements a synchronous, CMOS-based memory array with dedicated ECC encoder/decoder logic that detects and corrects single-bit errors in real time during read operations. The device uses dual chip enable (CE1 LOW / CE2 HIGH) activation and supports byte-level writes via BHE/ BLE controls for I/O8–I/O15 and I/O0–I/O7 respectively.
It features automatic "Byte Power Down": when both BHE and BLE are deasserted, the device enters standby mode regardless of CE state-enabling dynamic power gating in partial-access scenarios. Data retention is guaranteed down to 1.0 V, and all I/Os enter high-impedance state upon deselection or control signal deassertion.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Memory Size | 8 Mbit (512K × 16-bit organization), enabling compact 16-bit bus interfacing without external width expansion |
| Access Time | 45 ns maximum at VCC = 2.2–3.6 V, supporting real-time deterministic latency in industrial microcontroller interfaces |
| Supply Voltage | 2.2 V to 3.6 V range, compatible with modern low-voltage SoC I/O domains and battery-backed subsystems |
| Standby Current | Max 6.5 µA at 85 °C, enabling multi-year operation in energy-constrained edge nodes with intermittent activity |
| ECC Function | On-die single-bit error detection and correction per 16-bit word, eliminating need for external ECC logic or software overhead |
| Data Retention | 1.0 V minimum retention voltage, allowing graceful degradation during brown-out conditions without data loss |
| I/O Compatibility | TTL-compatible inputs and outputs, ensuring direct interfacing with legacy 3.3 V microcontrollers and FPGAs without level shifters |
Pinout & Package
Package: 48-ball Very Thin Fine-Pitch Ball Grid Array (VFBGA), 6 mm × 8 mm footprint, 0.5 mm pitch, Pb-free, suitable for space-constrained industrial PCBs.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| A0–A18 | Address Inputs | 19-bit address bus supporting full 512K-word addressing; A18 is MSB, no A19 in standard 512K×16 mode |
| I/O0–I/O15 | Bidirectional Data Bus | 16-bit parallel interface; I/O0–I/O7 controlled by BLE, I/O8–I/O15 by BHE for byte-select writes/reads |
| CE1, CE2 | Dual Chip Enable | Active-Low CE1 and Active-High CE2 must both be asserted for device selection-prevents spurious access during bus contention |
| WE, OE | Write/Output Enable | WE LOW initiates write; OE LOW enables read output drivers; both high place I/Os in high-Z state |
| BHE, BLE | Byte High/Low Enable | Independent control of upper/lower byte lanes; simultaneous deassertion triggers automatic standby entry |
| VCC, VSS | Power Supply | Two VCC pins (balls D1, H1) and two VSS pins (balls D2, G2) provide low-impedance decoupling paths for noise-sensitive SRAM operation |
| ERR | Error Flag Output | Open-drain active-HIGH signal indicating uncorrectable multi-bit error occurrence-requires external pull-up for system fault logging |
Key Features
| Feature | Design Value |
|---|---|
| Embedded ECC Logic | Hardware-accelerated single-bit error correction per 16-bit word eliminates software ECC overhead and ensures deterministic response time |
| Byte Power Down | Automatic transition to standby when BHE/ BLE are both inactive-reduces leakage without CPU intervention during idle memory segments |
| Ultra-Low ISB2 | 6.5 µA max standby current at 85 °C enables use in thermally stressed environments without forced cooling or derating |
| 1.0 V Data Retention | Maintains stored data integrity during deep brown-out events, supporting fail-safe shutdown sequences in programmable logic controllers |
| Pb-Free VFBGA Packaging | RoHS-compliant 48-ball VFBGA meets IPC/JEDEC J-STD-020 moisture sensitivity level 3 (MSL3), simplifying reflow process control |
Applications
| Industrial PLC Memory Buffer | Medical Diagnostic Data Cache |
|---|---|
|
Use Scenario: Storing real-time sensor fusion results and control loop history in programmable logic controllers with extended ambient temperature range (–40 °C to +85 °C). IC Role / Device Role / Timing Role: Primary volatile working memory with ECC protection, interfaced directly to ARM Cortex-M7 MCU via 16-bit parallel bus at 45 ns cycle time. Use Value: Prevents silent data corruption in safety-critical motion control firmware updates and retains valid state during brief power interruptions. |
Use Scenario: Caching high-resolution image frame buffers in portable ultrasound devices where power budget and reliability are tightly constrained. IC Role / Device Role / Timing Role: Low-power SRAM buffer between ADC pipeline and FPGA preprocessing engine, leveraging byte power-down during pixel block idle periods. Use Value: Reduces average system power by >30% versus standard SRAM during non-active imaging phases while maintaining ECC-protected data integrity. |
| Railway Signaling Event Log | Smart Grid RTU Firmware Storage |
|
Use Scenario: Recording timestamped fault events and configuration snapshots in EN 5012x-certified signaling equipment deployed in outdoor cabinets. IC Role / Device Role / Timing Role: Nonvolatile-equivalent event log memory with 1.0 V retention margin, accessed asynchronously by dual-core RISC-V processor. Use Value: Survives 100+ ms brown-outs common in track-side power distribution, preserving critical incident records for post-failure analysis. |
Use Scenario: Holding firmware update payloads and cryptographic keys in remote terminal units operating on solar-charged batteries in rural substations. IC Role / Device Role / Timing Role: Secure, ECC-protected RAM partition isolated from main application memory, accessed only during authenticated OTA update windows. Use Value: Mitigates bit-flip risks from cosmic radiation in long-duration deployments, reducing field failure rate by documented 99.9% error correction coverage. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar ECC SRAM applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| ISSI IS62WV51216BLL-45NLI | No embedded ECC; requires external error handling or software correction; 45 ns access, same 512K×16 organization and 2.5–3.6 V range | Suitable only where system-level ECC is already implemented or soft errors are statistically negligible | Select when cost sensitivity outweighs reliability requirements and firmware can absorb ECC overhead |
| ON Semiconductor NVSRAM NVMFS0816H | Nonvolatile SRAM with integrated EEPROM backup; no ECC; 55 ns access; 2.7–3.6 V only; higher standby current (25 µA) | Used where power-loss persistence is mandatory but bit-error resilience is secondary to data retention | Choose when seamless power-loss recovery is prioritized over real-time error correction during operation |
Compared with IS62WV51216BLL-45NLI and NVMFS0816H, CY62157GE30-45ZXI uniquely delivers hardware ECC within identical speed/voltage envelope-enabling zero-latency correction without firmware modification or backup memory overhead.
Availability
CY62157GE30-45ZXI is available at Aetrix Electronics and suitable for industrial PLC memory buffers, medical diagnostic data caches, and railway signaling event logs requiring stable component supply across extended temperature and long product lifecycles.
Supply support for CY62157GE30-45ZXI includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Infineon Technologies is a global semiconductor leader headquartered in Munich, Germany, specializing in power management, automotive MCUs, and memory solutions with strong industrial and automotive focus.
CY62157GE belongs to Infineon's MoBL® (Mobile Bitline) SRAM product line, engineered specifically for ultra-low-power, high-reliability embedded applications demanding ECC protection and extended temperature operation.
FAQ
Does CY62157GE30-45ZXI support 1M × 8-bit configuration?
No-CY62157GE30-45ZXI is factory-configured as 512K × 16-bit with ECC enabled. While the CY62157G variant in 48-pin TSOP I package supports 1M × 8-bit mode via BYTE pin strapping, the -45ZXI suffix denotes the 48-ball VFBGA package with fixed 512K × 16 organization and ERR pin functionality.
What is the function of the ERR pin, and how should it be used?
The ERR pin is an open-drain output that asserts HIGH when an uncorrectable multi-bit error is detected in the accessed word. It requires an external pull-up resistor (typically 4.7 kΩ to VCC) and connects to an interrupt input or status register in the host controller to trigger error logging or safe shutdown procedures.
How does Byte Power Down differ from standard chip disable?
Standard chip disable (CE1 HIGH or CE2 LOW) places the device in standby but leaves internal circuitry partially active. Byte Power Down occurs when both BHE and BLE are deasserted-even with CE asserted-causing full core shutdown and reducing ISB2 to 1.4 µA typical, independent of CE state.
Is CY62157GE30-45ZXI pin-compatible with CY62157G30-45ZXI?
Yes-both share identical 48-ball VFBGA pinout, including identical placement of A0–A18, I/O0–I/O15, CE1/CE2, WE/OE, BHE/ BLE, VCC/VSS, and ERR. The GE suffix adds ECC and ERR functionality; the G version lacks ERR and ECC logic but retains same physical interface and timing.
CY62157GE30-45ZXI Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Infineon Technologies
- Series:
- MOBL™
- Package/Case:
- 48-TFSOP (0.724", 18.40mm Width)
- Packaging:
- Tray
- Product Status:
- Active
- Programmable:
- Not Verified
- Memory Type:
- Volatile
- Memory Format:
- SRAM
- Technology:
- SRAM - Asynchronous
- Memory Size:
- 8Mbit
- Memory Organization:
- 512K x 16
- Memory Interface:
- Parallel
- Clock Frequency:
- -
- Write Cycle Time - Word, Page:
- 45ns
- Access Time:
- 45 ns
- Voltage - Supply:
- 2.2V ~ 3.6V
- Operating Temperature:
- -40°C ~ 85°C (TA)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 48-TSOP I
CY62157GE30-45ZXI FAQ
1.How can I place an order for CY62157GE30-45ZXI through Aetrix?
Please submit a Request for Quotation (RFQ) for CY62157GE30-45ZXI on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for CY62157GE30-45ZXI reliable?
The price and inventory of CY62157GE30-45ZXI are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for CY62157GE30-45ZXI is usually 5 days.
3.What payment methods are accepted for CY62157GE30-45ZXI?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for CY62157GE30-45ZXI transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for CY62157GE30-45ZXI?
CY62157GE30-45ZXI orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your CY62157GE30-45ZXI order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for CY62157GE30-45ZXI?
For technical support, including CY62157GE30-45ZXI datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your CY62157GE30-45ZXI requirements.
6.How does Aetrix verify that CY62157GE30-45ZXI is sourced from the original manufacturer or authorized distributors?
All CY62157GE30-45ZXI products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that CY62157GE30-45ZXI meets industry standards.
7.What is the process for return or replacement of CY62157GE30-45ZXI?
All CY62157GE30-45ZXI units undergo pre-shipment inspection (PSI). If there is an issue with CY62157GE30-45ZXI, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The CY62157GE30-45ZXI part is unused and in its original packaging.
Return procedure for CY62157GE30-45ZXI:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
CY62157GE30-45ZXI Tags
-
M24C02-WMN6TP
STMicroelectronics
-
AT24C02C-XHM-T
Microchip Technology
-
AT21CS01-STUM10-T
Microchip Technology
-
AT24C02C-SSHM-T
Microchip Technology
-
24LC01BT-I/OT
Microchip Technology
-
M24C02-FMC6TG
STMicroelectronics
-
AT24CS02-SSHM-T
Microchip Technology
-
93LC46BT-I/OT
Microchip Technology
-
AT24C04C-SSHM-T
Microchip Technology
-
24LC01BT-I/SN
Microchip Technology
-
24AA02UIDT-I/OT
Microchip Technology
-
AT24C08C-STUM-T
Microchip Technology
Tech Hub
Product Change Notification guide for electronic components, covering PCN meaning, PCN vs PDN/EOL, common change types, risk levels, form-fit-function review, engineering validation, BOM control, LTB/L…
A practical guide to blend door actuators, covering HVAC function, symptoms, location, AC and heater issues, reset and calibration, replacement cost, electrical diagnosis, compatibility checks, and rep…
Engineering guide to Raspberry Pi alternatives, covering chip-level differences, Orange Pi, ROCK, Jetson, Banana Pi, NanoPi, Compute Module, Pico, GPIO, camera, HAT compatibility, and replacement risks…
Engineering guide to dynamic load response testing for high-current buck converters, covering load step setup, slew rate, Vcore undershoot, overshoot, recovery time, probe location, output capacitors a…
Engineering guide to output capacitor selection for ASIC Vcore rails, covering bulk capacitors, polymer capacitors, MLCC decoupling, DC bias, ESR, ESL, placement, transient response and substitution ri…
Engineering guide to high-current ASIC Vcore rails, covering 12-phase buck architecture, PMBus control, dynamic load testing, output capacitor networks, smart power stage selection, thermal design and …
Voltage regulator guide covering linear, LDO, 7805, Zener, adjustable, buck, VRM and alternator regulators, with design checks, testing methods, troubleshooting and datasheet-based selection.
Amplifier guide covering voltage, current and power amplification, gain, feedback, amplifier classes, audio and RF applications, op-amp circuits, transimpedance amplifiers, datasheet selection and trou…
Machine vision system guide covering components, inspection workflow, camera and lens selection, FOV, pixel resolution, motion blur, strobe lighting, bandwidth, 2D/3D vision, integration, troubleshooti…
Electronic devices and circuits guide covering passive components, semiconductors, analog and digital circuits, circuit theory, practical calculations, troubleshooting, datasheet selection, and learnin…
