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Infineon Technologies CY62157GE30-45ZXIT
- Part No.:
- CY62157GE30-45ZXIT
- Manufacturer:
- Infineon Technologies
- Category:
- Memory
- Package:
- 48-TFSOP (0.724", 18.40mm Width)
- Datasheet:
-
CY62157GE30-45ZXIT.pdf
- Description:
- IC SRAM 8MBIT PARALLEL 48TSOP I
- Quantity:
- Payment:
- Shipping:
Inventory:3,869
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Product details
Overview
CY62157GE30-45ZXIT from Infineon Technologies (formerly Cypress) is an 8-Mbit MoBL® SRAM with embedded Error-Correcting Code (ECC), configured as 512K × 16-bit, operating at 45 ns access time over 2.2–3.6 V supply, and featuring ultra-low 1.4 µA typical standby current. It serves as a high-reliability data buffer in industrial controllers where bit-flip resilience and low-power retention are critical.
For engineers reviewing the CY62157GE30-45ZXIT datasheet, CY62157GE30-45ZXIT pinout, CY62157GE30-45ZXIT application, or CY62157GE30-45ZXIT equivalent, key selection criteria include ECC-enabled single-bit error correction, dual chip enable (CE1/CE2) logic, byte power-down capability, and compatibility with 48-ball VFBGA packaging for space-constrained embedded systems.
Technical Context
This SRAM integrates on-die ECC encoding/decoding circuitry that detects and corrects single-bit errors in real time during read operations, without external logic. Its dual CE architecture requires CE1 = LOW and CE2 = HIGH for device selection, enabling hierarchical memory mapping in multi-bank systems.
The Byte Power Down feature activates automatically when both BHE and BLE are deasserted, forcing the device into standby regardless of CE state-reducing leakage to ≤6.5 µA. Address range spans A0–A18 (512K words), with I/O0–I/O15 supporting full 16-bit parallel access or independent byte writes via BHE/ BLE control.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Memory Density | 8 Mbit (512K × 16-bit organization) |
| Access Time | 45 ns maximum - enables interface with 22.22 MHz bus clocks without wait states |
| VCC Range | 2.2 V to 3.6 V - supports mixed-voltage system integration with 3.3 V logic domains |
| Standby Current | Max 6.5 µA at 85 °C - sustains >10-year data retention in battery-backed applications |
| ECC Function | On-die single-bit error detection and correction - eliminates need for external ECC logic or software overhead |
| Data Retention | 1.0 V minimum VCC - maintains stored data during brown-out conditions down to 1 V |
| Package | 48-ball VFBGA (6 mm × 8 mm, 0.8 mm pitch) - optimized for high-density PCB layouts |
Pinout & Package
Package: 48-ball Very Thin Fine-Pitch Ball Grid Array (VFBGA), RoHS-compliant, 6 mm × 8 mm footprint, 0.8 mm ball pitch, bottom-side thermal pad not electrically connected.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| A0–A18 | Address inputs | 19-bit address bus supporting 512K-word addressing; no A19 in 512K×16 mode |
| I/O0–I/O15 | Bidirectional data bus | 16-bit parallel interface; I/O0–I/O7 controlled by BLE, I/O8–I/O15 by BHE |
| CE1, CE2 | Dual chip enable inputs | Active-Low CE1 and Active-High CE2 must both be asserted for access - prevents partial selection in multi-SRAM systems |
| WE | Write enable | Low-active signal initiating write cycle; latches data on rising edge of WE when OE is inactive |
| OE | Output enable | Controls output drivers only; does not affect internal timing or power state |
| BHE, BLE | Byte high/low enable | Enable 8-bit writes to upper/lower byte; simultaneous deassertion triggers automatic standby |
| VCC, VSS | Power and ground | Two VCC pins (Balls A1, E4) and two VSS pins (Balls C2, D3) reduce IR drop and noise coupling |
| ERR | Error flag output | Open-drain active-low signal pulsed when uncorrectable multi-bit error detected - requires external pull-up |
Key Features
| Feature | Design Value |
|---|---|
| Embedded ECC logic | Hardware-accelerated single-bit error correction per read cycle - zero latency penalty, no firmware intervention required |
| Byte Power Down | Automatic transition to ISB2 standby (≤6.5 µA) when BHE and BLE are both inactive - eliminates software-controlled sleep sequencing |
| Dual chip enable (CE1/CE2) | Asymmetric enable logic prevents accidental activation during power-up or reset glitches - improves system robustness |
| TTL-compatible I/O | VIH/VIL thresholds match standard 3.3 V logic families - enables direct connection to microcontrollers without level shifters |
| 1.0 V data retention | Maintains valid data at VCC ≥ 1.0 V - extends operational window during power failover or capacitor hold-up |
Applications
| Industrial PLC Data Buffer | Medical Imaging Frame Store |
|---|---|
|
Use Scenario: Real-time buffering of sensor acquisition data in programmable logic controllers with extended uptime requirements. IC Role / Device Role / Timing Role: High-speed, ECC-protected scratchpad memory interfacing directly to ARM Cortex-M7 DMA engines. Use Value: Prevents silent data corruption in long-duration control loops; 45 ns access ensures deterministic response under 100 µs cycle times. |
Use Scenario: Temporary storage of uncompressed ultrasound or X-ray frame buffers in portable diagnostic equipment. IC Role / Device Role / Timing Role: Low-power, radiation-tolerant SRAM holding 512×512 pixel frames before compression and transmission. Use Value: ECC mitigates soft errors induced by ambient ionizing radiation; 1.4 µA standby extends battery life between charges. |
| Railway Signaling Controller | Avionics Health Monitor |
|
Use Scenario: Storing configuration and event logs in EN 5012x-certified signaling interlock units exposed to wide temperature swings. IC Role / Device Role / Timing Role: Nonvolatile shadow RAM retaining critical state during cold starts and voltage sags. Use Value: 1.0 V data retention guarantees integrity across 100 ms brown-outs; –40 °C to +85 °C rating meets rail environmental specs. |
Use Scenario: Logging flight-critical sensor telemetry in DO-160G-compliant health monitoring modules. IC Role / Device Role / Timing Role: Radiation-hardened-by-design SRAM capturing ADC samples from engine vibration sensors. Use Value: On-die ECC replaces triple-module redundancy schemes, reducing board area and power by >40% versus discrete solutions. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar ECC SRAM applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| IS61WV51216EDBLL-10MLI | No embedded ECC; requires external error handling or software correction | Suitable only where FIT rate < 10−9/hour is acceptable; lacks hardware-level fault containment | Select only if cost sensitivity outweighs reliability requirements and system firmware can manage ECC overhead |
| AS6C8016-55ZIN | 55 ns access time; no ECC; 1.8 V–3.6 V VCC; 44-TSOP II package only | Lacks byte power-down and dual CE; higher 12 µA standby current limits battery runtime | Use only in non-critical, cost-driven designs where 10 ns slower access and no ECC are acceptable |
Compared with IS61WV51216EDBLL-10MLI and AS6C8016-55ZIN, CY62157GE30-45ZXIT uniquely delivers hardware ECC, 45 ns speed, and sub-µA standby in VFBGA - making it the sole choice for safety-critical, power-constrained, and space-limited industrial edge nodes.
Availability
CY62157GE30-45ZXIT is available at Aetrix Electronics and suitable for industrial PLCs, medical imaging subsystems, and railway signaling controllers requiring stable component supply across extended product lifecycles.
Supply support for CY62157GE30-45ZXIT includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Infineon Technologies is a global semiconductor leader headquartered in Munich, Germany, specializing in power management, automotive ICs, and memory solutions with ISO 9001 and IATF 16949 certified manufacturing.
CY62157GE belongs to Infineon's MoBL® (Mobile Bitline) SRAM product line, engineered for ultra-low-power, high-reliability embedded applications demanding ECC protection and extended temperature operation.
FAQ
Does CY62157GE30-45ZXIT support 1M × 8-bit configuration?
No. The CY62157GE30-45ZXIT is factory-configured and tested exclusively as a 512K × 16-bit device. While the datasheet notes that the 48-pin TSOP I variant of CY62157GE can be repurposed as 1M × 8-bit via BYTE pin strapping, this option is not supported in the VFBGA package (ZXIT suffix) due to fixed internal bonding and lack of BYTE pin routing.
What is the function of the ERR pin, and how should it be terminated?
The ERR pin is an open-drain output that pulses low for 10 ns when an uncorrectable multi-bit error is detected during a read cycle. It must be externally pulled up to VCC via a 4.7 kΩ resistor. No internal pull-up exists, and leaving ERR floating may cause false triggering or bus contention in multi-device systems.
Can CE1 and CE2 be tied together for simplified control?
No. CE1 is active-low and CE2 is active-high; tying them together defeats the dual-enable architecture and risks undefined behavior during power-up or signal skew. The device requires CE1 = LOW and CE2 = HIGH simultaneously for access - they serve distinct timing and noise-immunity roles per the logic block diagram.
Is the 48-ball VFBGA package lead-free and RoHS compliant?
Yes. The ZXIT suffix explicitly denotes a Pb-free, RoHS-compliant 48-ball VFBGA package, with matte tin surface finish on solder balls and halogen-free molding compound, meeting JEDEC J-STD-020D reflow profile requirements and IPC/JEDEC J-STD-033D moisture sensitivity level 3 handling guidelines.
CY62157GE30-45ZXIT Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Infineon Technologies
- Series:
- MOBL™
- Package/Case:
- 48-TFSOP (0.724", 18.40mm Width)
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- Programmable:
- Not Verified
- Memory Type:
- Volatile
- Memory Format:
- SRAM
- Technology:
- SRAM - Asynchronous
- Memory Size:
- 8Mbit
- Memory Organization:
- 512K x 16
- Memory Interface:
- Parallel
- Clock Frequency:
- -
- Write Cycle Time - Word, Page:
- 45ns
- Access Time:
- 45 ns
- Voltage - Supply:
- 2.2V ~ 3.6V
- Operating Temperature:
- -40°C ~ 85°C (TA)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 48-TSOP I
CY62157GE30-45ZXIT FAQ
1.How can I place an order for CY62157GE30-45ZXIT through Aetrix?
Please submit a Request for Quotation (RFQ) for CY62157GE30-45ZXIT on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for CY62157GE30-45ZXIT reliable?
The price and inventory of CY62157GE30-45ZXIT are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for CY62157GE30-45ZXIT is usually 5 days.
3.What payment methods are accepted for CY62157GE30-45ZXIT?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for CY62157GE30-45ZXIT transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for CY62157GE30-45ZXIT?
CY62157GE30-45ZXIT orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your CY62157GE30-45ZXIT order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for CY62157GE30-45ZXIT?
For technical support, including CY62157GE30-45ZXIT datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your CY62157GE30-45ZXIT requirements.
6.How does Aetrix verify that CY62157GE30-45ZXIT is sourced from the original manufacturer or authorized distributors?
All CY62157GE30-45ZXIT products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that CY62157GE30-45ZXIT meets industry standards.
7.What is the process for return or replacement of CY62157GE30-45ZXIT?
All CY62157GE30-45ZXIT units undergo pre-shipment inspection (PSI). If there is an issue with CY62157GE30-45ZXIT, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The CY62157GE30-45ZXIT part is unused and in its original packaging.
Return procedure for CY62157GE30-45ZXIT:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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