Infineon Technologies CY62157H30-45BVXA

Overview

CY62157H30-45BVXA from Cypress Semiconductor is an AEC-Q100 qualified automotive-grade 8-Mbit (512K × 16) CMOS static RAM with embedded single-bit error-correcting code (ECC), operating at 45 ns access time over 2.2–3.6 V supply, with ultra-low standby current (5.5 μA typ), and housed in a Pb-free 48-ball VFBGA package. It supports dual chip-enable (CE1/CE2) and byte-level control (BHE/BLE) for selective upper/lower byte writes and reads in safety-critical automotive memory subsystems.

For engineers reviewing the CY62157H30-45BVXA datasheet, CY62157H30-45BVXA pinout, CY62157H30-45BVXA application, or CY62157H30-45BVXA equivalent, key selection criteria include ECC-enabled data integrity, AEC-Q100 Automotive-A temperature range (–40 °C to +85 °C), 1.0 V data retention capability, dual CE architecture, and Byte Power Down mode for dynamic power optimization.

Technical Context

This SRAM implements a 512K × 16-bit array with dedicated ECC encode/decode logic that detects and corrects single-bit errors on-the-fly during read operations-without automatic write-back. Its dual chip-enable interface requires CE1 = LOW and CE2 = HIGH for device selection, enabling hierarchical memory mapping in multi-chip systems.

The Byte Power Down feature activates when both BHE and BLE are deasserted, forcing the device into standby regardless of CE state-reducing leakage to ≤16 μA. All I/Os enter high-impedance when deselected or during inactive control cycles, supporting bus sharing in automotive microcontroller interfaces.

Key Specifications

Pinout & Package

Package: 48-ball Very Thin Fine-Pitch Ball Grid Array (VFBGA), 6 mm × 8 mm, 0.5 mm pitch, RoHS-compliant and Pb-free.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar SRAM with ECC applications.

Compared with IS62WV51216BLL-45NLI and N25S80A16T150I, CY62157H30-45BVXA uniquely delivers hardware ECC, AEC-Q100 qualification, and 45 ns performance in one automotive-qualified package-making it the only option for ISO 26262 ASIL-B memory subsystems requiring real-time error correction without firmware overhead.

Availability

CY62157H30-45BVXA is available at Aetrix Electronics and suitable for advanced driver assistance systems (ADAS), automotive instrument clusters, and engine control units (ECU) requiring stable component supply across extended automotive lifecycles.

Supply support for CY62157H30-45BVXA includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Cypress Semiconductor (now part of Infineon Technologies) designs high-reliability memory and programmable solutions for automotive, industrial, and IoT applications, with focus on functional safety and long-term supply stability.

CY62157H30 is part of Cypress's MoBL® (Mobile Binary Logic) SRAM product line-engineered specifically for low-power, high-integrity automotive memory applications demanding ECC, wide temperature operation, and AEC-Q100 compliance.

FAQ

Does CY62157H30-45BVXA support automatic error correction during write operations?

No. The embedded ECC corrects single-bit errors only during read operations. The device does not perform automatic write-back on error detection, nor does it validate or correct data written to memory. Error correction is strictly read-time, hardware-accelerated, and transparent to the host controller.

What is the function of the dual chip-enable (CE1/CE2) interface?

The dual CE interface requires CE1 = LOW and CE2 = HIGH simultaneously to select the device. This architecture prevents spurious activation during power-up or noise transients and enables hierarchical memory banking-allowing multiple CY62157H30 devices to share address/data buses with independent enable control.

Can CY62157H30-45BVXA operate reliably at 2.2 V supply voltage?

Yes. The device is fully specified from 2.2 V to 3.6 V, including 45 ns access time, ECC functionality, and 5.5 μA typical standby current at 2.2 V. DC and AC parameters-including VOH, VOL, and tRC-are guaranteed across this entire voltage range per the Automotive-A operating conditions.

How does the Byte Power Down feature reduce system power consumption?

When both BHE and BLE are deasserted (HIGH), the device enters standby mode-even if CE1/CE2 remain active-reducing ICC to ≤16 μA. This allows microcontrollers to disable unused byte lanes dynamically (e.g., during 8-bit transfers), cutting SRAM power in proportion to actual data width usage without reconfiguring chip enables.