Infineon Technologies CY62157H30-45BVXAT

Overview

CY62157H30-45BVXAT from Cypress Semiconductor is an AEC-Q100 qualified automotive-grade 8-Mbit (512K × 16) CMOS static RAM with embedded single-bit error-correcting code (ECC), operating at 45 ns access time over 2.2–3.6 V supply, with ultra-low 5.5 μA typical standby current and –40 °C to +85 °C temperature range - deployed in ADAS domain controllers for real-time sensor data buffering.

For engineers reviewing the CY62157H30-45BVXAT datasheet, CY62157H30-45BVXAT pinout, CY62157H30-45BVXAT application, or CY62157H30-45BVXAT equivalent, key selection criteria include dual chip-enable timing compatibility, byte-power-down behavior under BHE/BLE deassertion, ECC correction without automatic write-back, and VFBGA-48 thermal resistance (ΘJA = 31.5 °C/W) for thermally constrained ECUs.

Technical Context

This SRAM implements a dual CE architecture (CE1 LOW + CE2 HIGH) for selective device activation and supports independent upper-byte (BHE) and lower-byte (BLE) writes via dedicated I/O0–I/O7 and I/O8–I/O15 paths. Its ECC logic detects and corrects single-bit errors in real time but does not perform automatic write-back on correction.

The "Byte Power Down" feature enables seamless transition to standby mode when both BHE and BLE are deasserted - independent of CE state - reducing power to ≤16 μA. Data retention remains valid down to 1.0 V VCC, with tCDR (chip deselect to retention) unmeasured and tR (recovery time) specified at 45 ns.

Key Specifications

Pinout & Package

Package: 48-ball Very Thin Fine-Pitch Ball Grid Array (VFBGA), 6 mm × 8 mm footprint, 0.5 mm pitch, JEDEC MO-276AA compliant.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar SRAM-with-ECC applications.

Compared with IS62WV51216BLL-45NLI and N25S80A16T1G, CY62157H30-45BVXAT uniquely delivers certified automotive reliability, on-die ECC, and sub-10 μA standby - making it optimal for safety-critical, low-power, real-time buffering where deterministic error containment is mandatory.

Availability

CY62157H30-45BVXAT is available at Aetrix Electronics and suitable for ADAS domain controllers, automotive gateways, infotainment UI caching, and electric powertrain inverter control requiring stable component supply across extended automotive lifecycles.

Supply support for CY62157H30-45BVXAT includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Cypress Semiconductor (now part of Infineon Technologies) designs high-reliability memory and programmable solutions for automotive, industrial, and IoT applications, with global manufacturing and AEC-Q100 validation infrastructure.

CY62157H30-45BVXAT belongs to Cypress's MoBL® (More Battery Life) SRAM product line - engineered specifically for low-voltage, low-power, high-reliability automotive memory applications with integrated ECC and extended temperature operation.

FAQ

Does CY62157H30-45BVXAT support automatic error correction write-back?

No. The embedded ECC detects and corrects single-bit errors during read operations, but corrected data is not automatically written back to the memory array. Host firmware must explicitly initiate a write if persistent correction is required. This design avoids hidden write cycles that could interfere with real-time timing guarantees.

What happens when both BHE and BLE are deasserted while CE1/CE2 remain active?

The device enters Byte Power Down mode regardless of CE state, reducing ICC to ≤16 μA. Outputs go Hi-Z, internal clocks halt, and the memory array enters ultra-low-power retention - but address/data lines remain latched and accessible upon re-enabling BHE or BLE without full re-initialization.

Is the 48-ball VFBGA package lead-free and RoHS-compliant?

Yes. CY62157H30-45BVXAT uses a Pb-free, RoHS-compliant VFBGA package with matte tin surface finish. Solder reflow profiles follow IPC/JEDEC J-STD-020D for MSL3 handling, and the package meets JEDEC MO-276AA mechanical specifications.

Can CY62157H30-45BVXAT operate reliably at 2.2 V VCC across the full –40 °C to +85 °C range?

Yes. All AC and DC specifications - including 45 ns access time, 5.5 μA standby current, and TTL-compatible VIH/VIL thresholds - are guaranteed over 2.2–3.6 V and –40 °C to +85 °C per AEC-Q100 Automotive-A qualification. Data retention holds down to 1.0 V at temperature extremes.