Send an Inquiry

To receive a quote for your project, please fill in the following information, and we’ll get back to you promptly.

Submit Inventory List

Please fill in the following information, and we’ll get back to you promptly.

Home > Products > Integrated Circuits (ICs) > Memory > Memory

Infineon Technologies CY62157H30-45BVXIT

Name: CY62157H30-45BVXIT
Brand: Infineon Technologies
SKU: CY62157H30-45BVXIT
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

Compare

Part No.:: CY62157H30-45BVXIT

Manufacturer:: Infineon Technologies

Category:: Memory

Package:: 48-VFBGA

Datasheet:: CY62157H30-45BVXIT.pdf

Description:: IC SRAM 8MBIT PARALLEL 48VFBGA

Quantity:: RFQ Add To RFQ list

Payment:

Shipping:

Inventory:2,000

Please send an inquiry. Send us your inquiry, and we will respond immediately.

Product details

Overview

CY62157H30-45BVXIT from Cypress Semiconductor is an 8-Mbit (512K × 16-bit) MoBL® SRAM with embedded single-bit Error-Correcting Code (ECC), operating at 45 ns access time over 2.2–3.6 V supply, featuring dual chip enable (CE1/CE2), byte power-down, and TTL-compatible I/Os - used in industrial control systems requiring high-reliability data storage under voltage variation.

For engineers reviewing the CY62157H30-45BVXIT datasheet, CY62157H30-45BVXIT pinout, CY62157H30-45BVXIT application, or CY62157H30-45BVXIT equivalent, key selection criteria include ECC-enabled bit error correction, ultra-low 5.5 µA typical standby current, 45 ns read/write timing, and dual-package availability (48-ball VFBGA / 48-pin TSOP I) for space-constrained or legacy PCB designs.

Technical Context

The CY62157H30 implements a synchronous CMOS SRAM architecture with dedicated ECC encoder/decoder logic that detects and corrects single-bit errors in real time during read operations. Its dual chip enable interface (CE1 LOW + CE2 HIGH) enables precise memory banking control in multi-device systems.

Byte-level access is managed via independent BHE (I/O8–I/O15) and BLE (I/O0–I/O7) controls, supporting both 16-bit and 8-bit data transfers. The "Byte Power Down" feature triggers automatic standby when both BHE and BLE are deasserted - independent of CE state - enabling dynamic power gating per memory access granularity.

Key Specifications

Parameter	Value and Actual Design Meaning
Memory Density	8 Mbit (512K words × 16-bit) - supports full-word parallel access without external multiplexing
Access Time	45 ns - guarantees deterministic latency for real-time firmware execution and buffer management
V_CC Range	2.2 V to 3.6 V - compatible with mixed-voltage SoC interfaces and battery-backed operation
Standby Current	5.5 µA typical / 16 µA max - enables >1-year data retention on coin-cell backup
ECC Function	Single-bit error detection and correction - eliminates soft-error-induced system crashes in industrial environments
Data Retention Voltage	1.0 V - maintains stored data during brown-out or controlled power-down sequences
I/O Compatibility	TTL-compatible inputs/outputs - interoperable with legacy microcontrollers and FPGAs without level-shifting

Pinout & Package

Package: 48-ball Very Thin Fine-Pitch Ball Grid Array (VFBGA), 6 × 8 × 1 mm, Pb-free, RoHS-compliant.

Pin/Terminal	Circuit Role	Design Meaning
A0–A18	Address Inputs	19-bit address bus supporting 512K-word addressing; A18 enables full 512K range
I/O0–I/O15	Bidirectional Data Bus	16-bit parallel interface; split into upper (I/O8–I/O15) and lower (I/O0–I/O7) bytes via BHE/BLE
CE1, CE2	Dual Chip Enable	Active-Low CE1 and Active-High CE2 must both be asserted for device selection - prevents partial activation in dense memory maps
WE	Write Enable	Low-active signal initiating write cycle; timing-critical for meeting 45 ns tWC and tPWE requirements
OE	Output Enable	Controls output driver enable; tDOE = 22 ns defines fastest read-to-data-valid path
BHE, BLE	Byte High/Low Enable	Independent 8-bit write/read control; simultaneous deassertion triggers automatic standby mode
V_CC, V_SS	Power Supply	Dual V_CC/V_SS pairs reduce switching noise; decoupling required per JEDEC VFBGA layout guidelines

Key Features

Feature	Design Value
Embedded ECC Logic	Real-time single-bit error correction on every read - eliminates need for external ECC controllers or software overhead
Byte Power Down	Automatic transition to 5.5 µA standby when BHE & BLE inactive - enables per-access power gating without CE reconfiguration
Dual Chip Enable Interface	CE1/CE2 pairing provides unambiguous device selection in multi-SRAM systems - avoids bus contention during partial decode
1.0 V Data Retention	Maintains valid memory contents down to 1.0 V V_CC - supports graceful shutdown and battery-swappable applications
TTL-Compatible I/O	Meets VIH/VIL thresholds across full 2.2–3.6 V range - ensures reliable interfacing with 3.3 V and mixed-voltage microcontrollers

Applications

Industrial PLC Memory Buffer

Medical Diagnostic Data Cache

Use Scenario: Real-time I/O buffering in programmable logic controllers where firmware writes sensor logs and reads actuator commands at 10 kHz.

IC Role / Device Role / Timing Role: High-speed, ECC-protected SRAM serving as deterministic latency buffer between ARM Cortex-M7 core and fieldbus interface ASIC.

Use Value: 45 ns access time ensures sub-100 ns round-trip memory latency; ECC prevents corrupted log entries during EMI-heavy factory floor operation.

Use Scenario: Temporary storage of raw image frames from ultrasound transducer arrays before FPGA-based beamforming.

IC Role / Device Role / Timing Role: Low-power, byte-accessible SRAM providing burst-mode frame buffering with guaranteed data integrity during power transitions.

Use Value: Byte power-down reduces idle power by >95% between frame captures; 1.0 V retention preserves last valid frame during brief AC dropout.

Railway Signaling Controller RAM

Avionics Display System Frame Buffer

Use Scenario: Storing safety-critical configuration tables and runtime state variables in EN 5012x-certified signaling interlock units.

IC Role / Device Role / Timing Role: Industrial-grade SRAM with ECC acting as fault-tolerant working memory for SIL-3 certified control logic.

Use Value: Single-bit error correction satisfies IEC 61508 hardware fault tolerance requirements; -40°C to +85°C rating ensures reliability in trackside enclosures.

Use Scenario: Holding rendered GUI layers and overlay metadata in DO-178C-compliant cockpit display units with dual-redundant graphics pipelines.

IC Role / Device Role / Timing Role: Dual-port-capable SRAM (via CE/BHE/OLE timing) synchronizing frame updates between primary and backup rendering engines.

Use Value: 48-ball VFBGA footprint enables compact, thermally efficient placement near GPU; 2.2–3.6 V range matches avionics 28 V DC-DC converter outputs.

Equivalent & Alternatives

The following parts are listed as comparable options for similar SRAM with ECC applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IS61WV51216BLL-10MLI	No embedded ECC; requires external error handling or software mitigation	Suitable only where bit errors are statistically negligible (e.g., non-safety-critical consumer buffers)	Select only if ECC is not mandated and cost sensitivity outweighs reliability risk
AS6C1008-55PCN	55 ns access time; no ECC; 3.3 V only; 32-pin SOJ package	Limited to legacy 3.3 V-only systems with no voltage margin or ECC requirement	Choose only for drop-in replacement in existing 32-pin SOJ layouts where timing slack exists

Compared with IS61WV51216BLL-10MLI and AS6C1008-55PCN, CY62157H30-45BVXIT uniquely delivers integrated ECC, 45 ns speed at 2.2 V minimum, and byte-level power control - making it the sole option for industrial and transportation applications demanding concurrent performance, low voltage operation, and hardware-level data integrity.

Availability

CY62157H30-45BVXIT is available at Aetrix Electronics and suitable for industrial PLC memory buffers, medical diagnostic data caches, railway signaling controller RAM, and avionics display system frame buffers requiring stable component supply across extended temperature and voltage ranges.

Supply support for CY62157H30-45BVXIT includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Cypress Semiconductor (now part of Infineon Technologies) designs high-reliability memory and programmable solutions for industrial, automotive, and communications infrastructure markets.

The CY62157H MoBL® SRAM product line targets power-sensitive, mission-critical embedded systems requiring deterministic timing, extended voltage operation, and hardware-assisted data integrity - especially where radiation-induced soft errors or voltage droop pose reliability risks.

FAQ

What is the function of the BYTE pin on CY62157H30-45BVXIT?

The BYTE pin is not present on the 48-ball VFBGA package (CY62157H30-45BVXIT); it appears only on the 48-pin TSOP I variant. In TSOP I, tying BYTE to V_CC configures the device as a 1 M × 16 SRAM, while tying it to V_SS enables 2 M × 8 mode using A20 (pin 45) - but this pin is unused and NC in the VFBGA version.

Does CY62157H30-45BVXIT require external circuitry to implement ECC?

No. ECC encoding and decoding are fully embedded in the silicon - no external logic, parity bits, or software routines are needed. Single-bit errors are corrected transparently during each read cycle, and the corrected data appears on I/O lines without CPU intervention or timing penalty.

Can CY62157H30-45BVXIT operate reliably at 2.2 V while maintaining 45 ns access time?

Yes. The 45 ns access time is specified and tested across the full 2.2–3.6 V V_CC range. Electrical characteristics including tAA, tACE, and tDOE are guaranteed at V_CC = 2.2 V, enabling robust operation in battery-powered or wide-input DC-DC applications without speed degradation.

How does the Byte Power Down feature interact with chip enable signals?

Byte Power Down activates independently of CE1/CE2 states: when both BHE and BLE are deasserted, the device enters standby mode (ISB1 ≤ 16 µA) even if CE1 is LOW and CE2 is HIGH. This allows fine-grained power control during partial-word accesses without requiring reconfiguration of chip select lines.

CY62157H30-45BVXIT Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: MOBL™

Package/Case:: 48-VFBGA

Packaging:: Tape & Reel (TR)

Product Status:: Obsolete

Programmable:: Not Verified

Memory Type:: Volatile

Memory Format:: SRAM

Technology:: SRAM - Asynchronous

Memory Size:: 8Mbit

Memory Organization:: 512K x 16

Memory Interface:: Parallel

Clock Frequency:: -

Write Cycle Time - Word, Page:: 45ns

Access Time:: 45 ns

Voltage - Supply:: 2.2V ~ 3.6V

Operating Temperature:: -40°C ~ 85°C (TA)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: 48-VFBGA (6x8)

CY62157H30-45BVXIT FAQ

1.How can I place an order for CY62157H30-45BVXIT through Aetrix?

Please submit a Request for Quotation (RFQ) for CY62157H30-45BVXIT on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for CY62157H30-45BVXIT reliable?

The price and inventory of CY62157H30-45BVXIT are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for CY62157H30-45BVXIT is usually 5 days.

3.What payment methods are accepted for CY62157H30-45BVXIT?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for CY62157H30-45BVXIT transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for CY62157H30-45BVXIT?

CY62157H30-45BVXIT orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your CY62157H30-45BVXIT order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for CY62157H30-45BVXIT?

For technical support, including CY62157H30-45BVXIT datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your CY62157H30-45BVXIT requirements.

6.How does Aetrix verify that CY62157H30-45BVXIT is sourced from the original manufacturer or authorized distributors?

All CY62157H30-45BVXIT products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that CY62157H30-45BVXIT meets industry standards.

7.What is the process for return or replacement of CY62157H30-45BVXIT?

All CY62157H30-45BVXIT units undergo pre-shipment inspection (PSI). If there is an issue with CY62157H30-45BVXIT, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The CY62157H30-45BVXIT part is unused and in its original packaging.

Return procedure for CY62157H30-45BVXIT:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

Tech Hub

2026-08-28 SR Latch Explained: NOR and NAND Circuits, Truth Tables, and Applications

An SR latch stores one bit through cross-coupled feedback. This engineering reference covers NOR and NAND implementations, truth tables, forbidden-state recovery, gated operation, switch debouncing, fa…

2026-08-27 Latch Circuit: SR and D Latches, Truth Tables, Timing, and Applications

Latch circuits retain one bit through feedback. This technical reference covers SR and D latches, truth tables, transparency, timing limits, latch-versus-flip-flop behavior, applications and common log…

2026-08-21 What Is an LED Driver? Types, Circuits, Dimming, and Selection

An engineering guide to LED driver operation, constant-current and constant-voltage outputs, linear and switching topologies, dimming, IC selection, calculations, replacement compatibility, and fault c…

2026-08-18 Operational Amplifier (Op Amp): Basics, Configurations, Feedback and Applications

Operational amplifier guide covering op amp basics, feedback, ideal vs real op amps, common configurations, buffer circuits, offset, bias current, gain-bandwidth, slew rate, rail-to-rail limits and sel…

2026-08-14 Jumper Cables: How to Use, Connect and Choose Them Safely

Jumper cables guide covering safe connection order, red and black clamp placement, final ground connection, cable gauge, length, clamp quality, copper vs CCA cables, jump starter comparison and battery…

2026-08-11 LDO Regulator: Dropout Voltage, Noise, PSRR and Power Dissipation

LDO regulator guide covering low dropout voltage, power dissipation, thermal design, PSRR, output noise, capacitor stability, adjustable LDO circuits, LDO vs buck converter and datasheet selection chec…

2026-08-06 Conditional Access Module: CAM, CI/CI+ and DVB Security

Conditional Access Module guide covering CAM meaning, CI/CI+ interface, smart card authorization, DVB security workflow, TV and set-top box compatibility, internal electronics, ESD protection, connecto…

2026-08-03 Electronic Component Obsolescence: EOL Risks, Replacement Options and Last-Time Buy Strategy

Guide to electronic component obsolescence covering EOL risk, PCN/PDN notices, last-time buy planning, replacement options, form-fit-function validation, counterfeit risk and BOM lifecycle management.

2026-07-29 18650 Battery: Voltage, Capacity, Charging and Pack Design

18650 battery guide covering lithium-ion cell basics, 3.6V/3.7V voltage, 4.2V charging, mAh and Wh capacity, protected cells, chargers, BMS, series-parallel packs, holders, welding and sourcing checks.…

2026-07-27 Hall Effect Sensor: Working Principle, Types, Circuits and Applications

Hall effect sensor guide covering working principle, linear and digital sensors, Arduino circuits, current sensing, speed detection, automotive applications, A3144 examples, signal filtering and datash…