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Infineon Technologies CY62158ELL-45ZSXIT
- Part No.:
- CY62158ELL-45ZSXIT
- Manufacturer:
- Infineon Technologies
- Category:
- Memory
- Package:
- 44-TSOP (0.400", 10.16mm Width)
- Datasheet:
-
CY62158ELL-45ZSXIT.pdf
- Description:
- IC SRAM 8MBIT PARALLEL 44TSOP II
- Quantity:
- Payment:
- Shipping:
Inventory:384
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Product details
Overview
CY62158ELL-45ZSXIT from Infineon Technologies (formerly Cypress) is a 8-Mbit (1 M × 8) high-speed CMOS static RAM with 45 ns access time, 4.5 V–5.5 V supply range, and ultra-low standby current (2 μA typical). It features dual chip enables (CE1/CE2), automatic power-down on deselect, and TTL-compatible I/O for microcontroller and embedded system memory expansion.
For engineers reviewing the CY62158ELL-45ZSXIT datasheet, CY62158ELL-45ZSXIT pinout, CY62158ELL-45ZSXIT application, or CY62158ELL-45ZSXIT equivalent, key selection criteria include industrial temperature support (–40 °C to +85 °C), TSOP II package compatibility, CE/OE/WE control timing, data retention at ≥2 V, and interface compatibility with legacy 5 V TTL processors.
Technical Context
The device implements a 1024K × 8 asynchronous SRAM architecture with independent address decoding, sense amplifiers, and data drivers. Its dual CE architecture (CE1 active-low, CE2 active-low) enables hierarchical memory mapping and seamless bank expansion without external logic.
Power management relies on automatic CE-triggered power-down: standby current drops to ≤8 μA when CE1 is HIGH or CE2 is LOW, while data retention remains valid down to VCC = 2.0 V. All I/O pins enter high-impedance state during deselect, OE HIGH, or write cycles.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Memory Density | 8 Mbit (1,048,576 × 8 bits) - supports full 20-bit addressing (A0–A19) for single-chip 1 MB byte-wide storage. |
| Access Time | 45 ns - guarantees read data valid within 45 ns of CE1/CE2 enable and OE assertion, meeting real-time microcontroller bus timing. |
| VCC Range | 4.5 V–5.5 V - compatible with standard 5 V logic rails and tolerant of ±10% supply variation. |
| Active Current | 18 mA max at fmax - enables low-power operation in burst-access embedded systems without thermal derating. |
| Standby Current | 8 μA max - allows battery-backed operation for months in portable instrumentation or metering applications. |
| Data Retention Voltage | 2.0 V min - maintains stored data during brown-out or backup-battery mode without external voltage supervision. |
| Operating Temperature | –40 °C to +85 °C - qualified for industrial-grade deployment in motor drives, PLCs, and network edge devices. |
Pinout & Package
Package: 44-pin TSOP II (Thin Small Outline Package, Type II), 400 mil width, lead-free (Pb-free), JEDEC MO-141AC compliant.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| A0–A19 | Address Inputs | 20-bit address bus supporting full 1 M-word addressing; no internal latching - requires stable address during CE/OE assertion. |
| I/O0–I/O7 | Bidirectional Data Bus | 8-bit multiplexed data path; tri-stated automatically during deselect, OE HIGH, or WE LOW (write). |
| CE1, CE2 | Chip Enable Inputs | Active-low dual CE: device enabled only when CE1 = LOW AND CE2 = LOW; enables memory banking and hierarchical decode. |
| OE | Output Enable | Active-low; controls output buffer enable independently of CE - allows read-modify-write without re-enabling chip. |
| WE | Write Enable | Active-low; initiates write cycle when CE1/CE2 active; data latched on WE falling edge per standard SRAM protocol. |
| VCC, VSS | Power Supply | Two VCC pins (pins 36, 37) and two VSS pins (pins 38, 39) reduce IR drop and improve noise immunity in high-speed operation. |
| NC | No Connect | Pins 11, 12, 13, 14, 31, 32, 33, 34, 35, 40, 41, 42 - not bonded internally; must be left unconnected or tied to GND per layout guidelines. |
Key Features
| Feature | Design Value |
|---|---|
| MoBL® Ultra-Low Power Architecture | Reduces active current to 1.8 mA at 1 MHz and standby to 2 μA typical - extends battery life in portable medical and handheld test equipment. |
| Dual Chip Enable (CE1/CE2) | Enables seamless memory expansion across multiple banks without glue logic - simplifies BOM and PCB routing in multi-module controllers. |
| Automatic Power-Down on Deselect | Eliminates need for external power-gating circuitry - standby current drops to ≤8 μA when CE1 HIGH or CE2 LOW, regardless of OE/WE state. |
| TTL-Compatible I/O Levels | VOH ≥ 2.4 V at VCC = 4.5 V and VOL ≤ 0.4 V ensures reliable interfacing with legacy 5 V microcontrollers (e.g., 8051, PIC18F) without level shifters. |
| Data Retention at 2.0 V | Maintains stored contents during brown-out or backup-battery operation - critical for energy-metering and alarm-system nonvolatile cache. |
Applications
| Industrial PLC Memory Buffer | Portable Medical Device Data Cache |
|---|---|
Use Scenario: Stores real-time sensor logs and configuration parameters in programmable logic controllers operating in harsh factory environments. IC Role / Device Role / Timing Role: Asynchronous SRAM buffer interfacing directly with ARM Cortex-M4 bus via 8-bit data path and 20-bit address decode. Use Value: 45 ns access time meets deterministic scan-cycle deadlines; –40 °C to +85 °C rating ensures reliability under ambient thermal cycling. |
Use Scenario: Holds patient waveform history and calibration data in battery-powered ECG monitors requiring weeks of runtime between charges. IC Role / Device Role / Timing Role: Low-power data cache retaining critical measurements during sleep mode using VCC dropout to 2.0 V. Use Value: 2 μA typical standby current extends battery life; automatic power-down eliminates software-controlled sleep-state management overhead. |
| Legacy 5 V Microcontroller Expansion | Network Edge Device Packet Buffer |
Use Scenario: Adds external RAM to 8-bit/16-bit microcontrollers (e.g., Renesas RL78, STMicroelectronics STM8) lacking on-chip SRAM for firmware overlays. IC Role / Device Role / Timing Role: TTL-level compatible memory mapped into external bus space using CE1/CE2 for bank selection. Use Value: Eliminates need for level translators; 4.5–5.5 V operation matches legacy 5 V rail tolerances without regulator redesign. |
Use Scenario: Buffers Ethernet packet payloads in industrial gateways handling Modbus TCP and MQTT traffic with bursty ingress/egress patterns. IC Role / Device Role / Timing Role: High-speed temporary storage for frame assembly/disassembly, synchronized to MAC controller DMA bursts. Use Value: 45 ns read/write cycle supports 22 MB/s sustained throughput; TSOP II package enables compact 2-layer PCB layout. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar asynchronous SRAM applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| ISSI IS62WV10248BLL-45NLI | Same density (1 M × 8), 45 ns speed, but 2.7–3.6 V supply range - not pin-compatible; different CE/OE logic polarity. | Designed for 3.3 V systems; incompatible with 5 V TTL buses without level translation. | Select only for new 3.3 V designs where voltage scaling is mandatory and board layout permits footprint change. |
| Renesas R1LV0816ASBG-45D1 | 1 M × 8, 45 ns, 4.5–5.5 V, but uses single CE and lacks automatic power-down - standby current 25 μA typical. | Requires external power-gating control; less suitable for battery-critical applications. | Choose when cost is primary constraint and system firmware can manage CE-driven sleep states explicitly. |
Compared with IS62WV10248BLL-45NLI and R1LV0816ASBG-45D1, CY62158ELL-45ZSXIT uniquely combines 5 V TTL compatibility, dual CE expandability, and sub-8 μA standby - making it optimal for industrial upgrades and legacy 5 V platforms requiring zero hardware modification.
Availability
CY62158ELL-45ZSXIT is available at Aetrix Electronics and suitable for industrial automation, portable instrumentation, legacy microcontroller expansion, and network edge buffering requiring stable component supply across extended product lifecycles.
Supply support for CY62158ELL-45ZSXIT includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Infineon Technologies is a global semiconductor leader headquartered in Munich, Germany, delivering power management, sensing, connectivity, and memory solutions for automotive, industrial, and IoT markets.
CY62158ELL-45ZSXIT belongs to the MoBL® (More Battery Life™) SRAM product line, engineered specifically for low-voltage, low-power, and industrial-temperature memory applications where reliability and long-term supply stability are critical.
FAQ
Is CY62158ELL-45ZSXIT compatible with 3.3 V microcontrollers?
No - this device operates strictly at 4.5–5.5 V and features TTL-compatible input thresholds (VIH ≥ 2.2 V, VIL ≤ 0.8 V). Interfacing with 3.3 V logic requires level-shifting circuitry. For native 3.3 V operation, consider Infineon's CY62167EV30 series instead.
What happens to data during power loss below 2.0 V?
Data retention is guaranteed only down to VCC = 2.0 V. Below that threshold, stored bits may corrupt unpredictably. The device does not include internal voltage monitoring or auto-hibernate - external brown-out detection is required for safe shutdown prior to VCC < 2.0 V.
Can CE1 and CE2 be tied together for single-enable operation?
Yes - CE1 and CE2 may be connected to the same control signal, provided the driving source meets VIH/VIL thresholds for both inputs simultaneously. However, doing so forfeits the memory banking capability and eliminates the option for hierarchical address decode.
Does the TSOP II package support reflow soldering?
Yes - the Pb-free 44-pin TSOP II package is rated for standard lead-free reflow profiles (J-STD-020D), with peak temperature up to 260 °C for ≤60 seconds. Thermal resistance (ΘJA = 55.84 °C/W) requires adequate copper pour and thermal vias for sustained 18 mA operation.
CY62158ELL-45ZSXIT Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Infineon Technologies
- Series:
- MOBL™
- Package/Case:
- 44-TSOP (0.400", 10.16mm Width)
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- Programmable:
- Not Verified
- Memory Type:
- Volatile
- Memory Format:
- SRAM
- Technology:
- SRAM - Asynchronous
- Memory Size:
- 8Mbit
- Memory Organization:
- 1M x 8
- Memory Interface:
- Parallel
- Clock Frequency:
- -
- Write Cycle Time - Word, Page:
- 45ns
- Access Time:
- 45 ns
- Voltage - Supply:
- 4.5V ~ 5.5V
- Operating Temperature:
- -40°C ~ 85°C (TA)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 44-TSOP II
CY62158ELL-45ZSXIT FAQ
1.How can I place an order for CY62158ELL-45ZSXIT through Aetrix?
Please submit a Request for Quotation (RFQ) for CY62158ELL-45ZSXIT on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for CY62158ELL-45ZSXIT reliable?
The price and inventory of CY62158ELL-45ZSXIT are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for CY62158ELL-45ZSXIT is usually 5 days.
3.What payment methods are accepted for CY62158ELL-45ZSXIT?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for CY62158ELL-45ZSXIT transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for CY62158ELL-45ZSXIT?
CY62158ELL-45ZSXIT orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your CY62158ELL-45ZSXIT order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for CY62158ELL-45ZSXIT?
For technical support, including CY62158ELL-45ZSXIT datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your CY62158ELL-45ZSXIT requirements.
6.How does Aetrix verify that CY62158ELL-45ZSXIT is sourced from the original manufacturer or authorized distributors?
All CY62158ELL-45ZSXIT products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that CY62158ELL-45ZSXIT meets industry standards.
7.What is the process for return or replacement of CY62158ELL-45ZSXIT?
All CY62158ELL-45ZSXIT units undergo pre-shipment inspection (PSI). If there is an issue with CY62158ELL-45ZSXIT, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The CY62158ELL-45ZSXIT part is unused and in its original packaging.
Return procedure for CY62158ELL-45ZSXIT:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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