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Infineon Technologies CY62158EV30LL-45BVXI
- Part No.:
- CY62158EV30LL-45BVXI
- Manufacturer:
- Infineon Technologies
- Category:
- Memory
- Package:
- 48-VFBGA
- Datasheet:
-
CY62158EV30LL-45BVXI.pdf
- Description:
- IC SRAM 8MBIT PARALLEL 48VFBGA
- Quantity:
- Payment:
- Shipping:
Inventory:1,465
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Product details
Overview
CY62158EV30LL-45BVXI from Infineon Technologies (formerly Cypress) is a 8-Mbit (1024K × 8) low-power CMOS static RAM with 45 ns access time, 2.2–3.6 V supply range, and ultra-low standby current (2 µA typical). It operates across industrial temperature (–40 °C to +85 °C) and is packaged in Pb-free 48-ball VFBGA for space-constrained portable memory applications.
For engineers reviewing the CY62158EV30LL-45BVXI datasheet, CY62158EV30LL-45BVXI pinout, CY62158EV30LL-45BVXI application, or CY62158EV30LL-45BVXI equivalent, key selection criteria include MoBL™ ultra-low active/standby power, dual chip enable (CE1/CE2) for hierarchical memory expansion, automatic power-down on deselect, and compatibility with 3.3 V and 2.5 V systems.
Technical Context
The device implements a 1024K × 8 asynchronous SRAM architecture with independent address decoding, sense amplifiers, and data drivers. Its dual CE architecture enables seamless bank selection in multi-chip memory systems without external logic.
Automatic power-down activates when CE1 is HIGH or CE2 is LOW, forcing I/O pins into high-impedance state and reducing ICCDR to ≤8 µA at VCC = 1.5 V. Read/write timing is fully specified under CMOS-level inputs with tRC = 45 ns, tAA = 45 ns, and tWC = 45 ns at VCC = 3.6 V.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Memory Density | 8 Mbit (1024K × 8), supports byte-wide data interface without multiplexing |
| Access Time | 45 ns max - ensures deterministic read latency in real-time control loops |
| Supply Voltage Range | 2.2 V–3.6 V - compatible with both 2.5 V and 3.3 V system rails |
| Standby Current | 2 µA typical / 8 µA max at VCC = 3.6 V - enables multi-year battery life in always-on IoT nodes |
| Active Current | 6 mA typical at f = 1 MHz - balances performance and energy efficiency in burst-access scenarios |
| Data Retention Voltage | 1.5 V min - allows memory retention during deep-sleep modes with reduced VCC |
| Operating Temperature | –40 °C to +85 °C - qualified for industrial-grade embedded systems |
Pinout & Package
Package: 48-ball Very Thin Fine-Pitch Ball Grid Array (VFBGA), 6 mm × 8 mm, 0.5 mm pitch, Pb-free, RoHS-compliant.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| A0–A19 | Address Inputs | 20-bit address bus supporting full 1024K-word addressing |
| I/O0–I/O7 | Bidirectional Data Bus | 8-bit parallel interface with tri-state control via CE/OE/WE |
| CE1, CE2 | Chip Enable Inputs | Active-LOW (CE1) and active-HIGH (CE2) enable hierarchical memory banking |
| OE | Output Enable | Controls output buffer; HIGH disables outputs (high-Z) |
| WE | Write Enable | Active-LOW signal initiating write cycle; overlaps with CE for timing control |
| VCC, VSS | Power Supply | Dual VCC (2.2–3.6 V) and ground pins distributed for noise reduction |
| NC | No Connect | Unbonded pads - must be left floating or tied to ground per layout guidelines |
Key Features
| Feature | Design Value |
|---|---|
| MoBL™ Ultra-Low Power Architecture | Reduces active current to 6 mA at 1 MHz and standby to 2 µA - extends battery runtime in portable devices |
| Dual Chip Enable (CE1/CE2) | Enables seamless 2-chip or 4-chip memory expansion without glue logic or address decoding overhead |
| Automatic Power-Down on Deselect | Eliminates need for external power management circuitry when CE1 HIGH or CE2 LOW |
| CMOS-Compatible Timing | Meets JEDEC-standard AC waveforms with 1 V/ns edge rates and defined load conditions (30 pF) |
| Data Retention at 1.5 V | Maintains stored data during brown-out or sleep mode with VCC as low as 1.5 V |
Applications
| Wireless Sensor Node Memory | Industrial PLC Data Buffer |
|---|---|
Use Scenario: Battery-powered environmental sensor collecting temperature/humidity every 5 seconds and storing 72 hours of history locally. IC Role / Device Role / Timing Role: Non-volatile cache holding recent telemetry before wireless upload; accessed asynchronously with burst reads. Use Value: 2 µA standby current enables >5-year battery life; 45 ns access supports rapid wake-and-read cycles without CPU stall. | Use Scenario: Real-time motion controller buffering encoder position data between FPGA processing stages. IC Role / Device Role / Timing Role: High-speed scratchpad memory for intermediate calculation results; synchronized via discrete CE/OE strobes. Use Value: 45 ns tAA and tRC guarantee sub-50 ns deterministic latency; dual CE allows bank-switching during background diagnostics. |
| Medical Wearable Data Logger | Automotive ADAS Pre-Event Buffer |
Use Scenario: ECG patch recording raw analog samples at 1 kS/s for 24-hour continuous monitoring. IC Role / Device Role / Timing Role: Circular buffer storing 8 Mbit of digitized waveform; written continuously, read on demand by BLE subsystem. Use Value: 6 mA active current at 1 MHz enables efficient streaming; 2.2–3.6 V range matches Li-ion battery discharge curve. | Use Scenario: Camera-based lane-departure system capturing 10 frames pre-trigger for collision analysis. IC Role / Device Role / Timing Role: Frame buffer holding compressed video snippets; written at 30 fps, read post-event by host processor. Use Value: Automatic power-down during idle reduces system quiescent draw; 48-ball VFBGA fits tight PCB area near image sensor. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar SRAM applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| IS61LV10248AL-10TLI | 10 ns access time, 3.3 V only (3.0–3.6 V), 36-pin TSOP II package | Higher speed but narrower voltage range; no VFBGA option | Select when system requires <10 ns latency and uses 3.3 V rail exclusively |
| AS6C4008-55ZIN | 55 ns access, 2.7–3.6 V, 44-pin TSOP II, higher ISB (15 µA typical) | Lower cost, larger footprint, less suitable for battery-critical designs | Select for cost-sensitive industrial controls where 55 ns latency is acceptable |
Compared with IS61LV10248AL-10TLI and AS6C4008-55ZIN, CY62158EV30LL-45BVXI uniquely balances ultra-low power (2 µA ISB), wide voltage operation (2.2–3.6 V), and compact VFBGA packaging - making it optimal for space- and energy-constrained portable electronics.
Availability
CY62158EV30LL-45BVXI is available at Aetrix Electronics and suitable for wireless sensor nodes, industrial PLC data buffers, and medical wearable data loggers requiring stable component supply and long-term manufacturability.
Supply support for CY62158EV30LL-45BVXI includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Infineon Technologies is a global semiconductor leader headquartered in Munich, Germany, specializing in power management, automotive, industrial, and IoT solutions.
This part belongs to the MoBL™ (More Battery Life) SRAM product line, engineered specifically for ultra-low-power memory in portable, battery-operated, and energy-harvesting systems.
FAQ
What is the minimum VCC required to retain data in CY62158EV30LL-45BVXI?
The device guarantees data retention down to VCC = 1.5 V, as specified in the Data Retention Characteristics table. At this voltage, ICCDR remains ≤8 µA, enabling reliable hold-mode operation during system sleep or brown-out conditions without external backup power.
Can CY62158EV30LL-45BVXI operate with mixed 2.5 V and 3.3 V logic interfaces?
Yes - its input thresholds (VIH = 1.8 V min at VCC = 2.2–2.7 V; VIH = 2.2 V min at VCC = 2.7–3.6 V) and output drive (VOH ≥ 2.0 V at IOH = –0.1 mA) ensure interoperability with both 2.5 V and 3.3 V CMOS logic families without level shifters.
How does the dual CE architecture improve memory expansion?
CE1 (active-LOW) and CE2 (active-HIGH) allow hierarchical enable logic: CE2 can select a memory bank while CE1 selects individual chips within that bank. This eliminates external address decoding and simplifies design of 16-Mbit or 32-Mbit systems using multiple CY62158EV30LL-45BVXI devices.
Is the 48-ball VFBGA package compatible with standard reflow profiles?
Yes - the Pb-free VFBGA package is qualified for IPC/JEDEC J-STD-020D reflow profiles, including peak temperatures up to 260 °C. Thermal resistance data (θJA = 36.92 °C/W) confirms suitability for convection-heated PCBs with standard two-layer board construction.
CY62158EV30LL-45BVXI Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Infineon Technologies
- Series:
- MOBL™
- Package/Case:
- 48-VFBGA
- Packaging:
- Tray
- Product Status:
- Active
- Programmable:
- Not Verified
- Memory Type:
- Volatile
- Memory Format:
- SRAM
- Technology:
- SRAM - Asynchronous
- Memory Size:
- 8Mbit
- Memory Organization:
- 1M x 8
- Memory Interface:
- Parallel
- Clock Frequency:
- -
- Write Cycle Time - Word, Page:
- 45ns
- Access Time:
- 45 ns
- Voltage - Supply:
- 2.2V ~ 3.6V
- Operating Temperature:
- -40°C ~ 85°C (TA)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 48-VFBGA (6x8)
CY62158EV30LL-45BVXI FAQ
1.How can I place an order for CY62158EV30LL-45BVXI through Aetrix?
Please submit a Request for Quotation (RFQ) for CY62158EV30LL-45BVXI on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for CY62158EV30LL-45BVXI reliable?
The price and inventory of CY62158EV30LL-45BVXI are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for CY62158EV30LL-45BVXI is usually 5 days.
3.What payment methods are accepted for CY62158EV30LL-45BVXI?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for CY62158EV30LL-45BVXI transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for CY62158EV30LL-45BVXI?
CY62158EV30LL-45BVXI orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your CY62158EV30LL-45BVXI order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for CY62158EV30LL-45BVXI?
For technical support, including CY62158EV30LL-45BVXI datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your CY62158EV30LL-45BVXI requirements.
6.How does Aetrix verify that CY62158EV30LL-45BVXI is sourced from the original manufacturer or authorized distributors?
All CY62158EV30LL-45BVXI products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that CY62158EV30LL-45BVXI meets industry standards.
7.What is the process for return or replacement of CY62158EV30LL-45BVXI?
All CY62158EV30LL-45BVXI units undergo pre-shipment inspection (PSI). If there is an issue with CY62158EV30LL-45BVXI, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The CY62158EV30LL-45BVXI part is unused and in its original packaging.
Return procedure for CY62158EV30LL-45BVXI:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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