Infineon Technologies CY62158EV30LL-45BVXIT

Overview

CY62158EV30LL-45BVXIT from Infineon Technologies (formerly Cypress) is a 8-Mbit (1024K × 8) CMOS static RAM with 45 ns access time, 2.2 V–3.6 V supply range, and ultra-low standby current (2 µA typical). It operates across –40 °C to +85 °C and is packaged in a Pb-free 48-ball VFBGA for space-constrained portable memory applications including cellular handsets and battery-powered IoT edge nodes.

For engineers reviewing the CY62158EV30LL-45BVXIT datasheet, CY62158EV30LL-45BVXIT pinout, CY62158EV30LL-45BVXIT application, or CY62158EV30LL-45BVXIT equivalent, key selection criteria include industrial-grade temperature support, dual chip enable (CE1/CE2) for hierarchical memory expansion, automatic power-down behavior, low active current (6 mA at 1 MHz), and compatibility with MoBL™ low-power system architectures.

Technical Context

The device implements a full CMOS SRAM core with independent CE1/CE2 control logic enabling selective bank deselection and automatic transition to ultra-low-power standby mode when either CE1 is HIGH or CE2 is LOW. Its 1024K × 8 organization uses 20 address lines (A0–A19) and 8 bidirectional I/Os (I/O0–I/O7), supporting asynchronous read/write operations without clocks or refresh cycles.

Timing is defined by strict AC parameters: tRC = 45 ns, tAA = 45 ns, tDOE = 22 ns, and tPD = 45 ns - all guaranteed over full voltage (2.2–3.6 V) and temperature (–40 °C to +85 °C) ranges. Data retention is maintained down to VCC = 1.5 V with ICCDR ≤ 8 µA, and tri-state output timing (tHZOE ≤ 18 ns, tLZCE ≥ 10 ns) ensures clean bus sharing in multi-device systems.

Key Specifications

Pinout & Package

Package: 48-ball Very Thin Fine-Pitch Ball Grid Array (VFBGA), 6 mm × 8 mm, 0.5 mm pitch, RoHS-compliant and Pb-free.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar SRAM applications.

Compared with IS62WV5128BLL-45NLI and R1LV5228ES-45GBG, CY62158EV30LL-45BVXIT uniquely combines 2.2 V minimum operation, 2 µA standby, and 48-ball VFBGA - making it optimal for miniaturized, battery-critical designs where voltage headroom and board area are constrained.

Availability

CY62158EV30LL-45BVXIT is available at Aetrix Electronics and suitable for cellular modem design, industrial PLC data buffering, portable diagnostic instrumentation, and smart energy metering requiring stable component supply across extended product lifecycles.

Supply support for CY62158EV30LL-45BVXIT includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a global semiconductor leader headquartered in Munich, Germany, specializing in power management, sensing, connectivity, and memory solutions for industrial, automotive, and IoT markets.

This device belongs to Infineon's MoBL™ (More Battery Life) SRAM product line, engineered specifically for ultra-low-power, high-reliability memory in portable and energy-harvested systems where voltage scalability and standby efficiency are design-critical.

FAQ

What is the minimum VCC required to retain data in CY62158EV30LL-45BVXIT?

Data retention is guaranteed down to VCC = 1.5 V, with ICCDR ≤ 8 µA under those conditions. This allows integration with backup coin-cell circuits or brown-out recovery schemes where main supply drops temporarily. The device maintains stored bits without corruption as long as VCC remains ≥1.5 V and CE1/CE2 are held inactive to enter retention mode.

Can CY62158EV30LL-45BVXIT operate reliably at 2.2 V across its full industrial temperature range?

Yes - the datasheet specifies full AC and DC operation from –40 °C to +85 °C at VCC = 2.2 V minimum. All timing parameters (including 45 ns tRC and tAA) and electrical characteristics (VIH/VIL thresholds, ICC, ISB2) are guaranteed across this voltage and temperature envelope, verified per JEDEC JESD47 stress testing.

How does the dual CE architecture (CE1 and CE2) improve memory system design?

CE1 and CE2 implement AND-gated chip select: the device activates only when CE1 = LOW and CE2 = HIGH. This allows hierarchical decoding - e.g., one FPGA output drives CE2 globally while local address bits drive CE1 per peripheral - reducing external logic and enabling scalable memory maps up to 16 MB without address-space collisions.

Is the 48-ball VFBGA package of CY62158EV30LL-45BVXIT compatible with standard reflow profiles?

Yes - the Pb-free VFBGA meets IPC/JEDEC J-STD-020D moisture sensitivity level 3 and is qualified for standard lead-free reflow profiles (peak 260 °C, 60 sec max above 217 °C). Board layout requires 0.5 mm pitch routing, non-solder-mask-defined pads, and thermal vias under the die pad per Infineon's AN98512 layout guidelines.