Infineon Technologies CY62158EV30LL-45ZSXIT

Overview

CY62158EV30LL-45ZSXIT from Infineon Technologies (formerly Cypress) is a 8-Mbit (1024K × 8) low-power CMOS static RAM with 45 ns access time, 2.2 V–3.6 V supply range, and ultra-low standby current (2 µA typical). It serves as main data buffer memory in portable industrial controllers, battery-powered telemetry modules, and handheld test equipment requiring deterministic timing and extended runtime.

For engineers reviewing the CY62158EV30LL-45ZSXIT datasheet, CY62158EV30LL-45ZSXIT pinout, CY62158EV30LL-45ZSXIT application, or CY62158EV30LL-45ZSXIT equivalent, key selection criteria include industrial temperature support (–40 °C to +85 °C), dual chip enable architecture for hierarchical memory mapping, VFBGA-48 package compatibility, and MoBL™ power optimization for battery-critical systems.

Technical Context

The device implements a fully static 1024K × 8 memory array with separate CE1/CE2 control enabling seamless bank selection in multi-SRAM systems. Its automatic power-down logic activates when CE1 is HIGH or CE2 is LOW, reducing ICCDR to ≤8 µA at 1.5 V retention voltage.

All I/O pins enter high-impedance state during deselection (CE1 HIGH or CE2 LOW), output disable (OE HIGH), or write cycles (WE LOW with valid CE), ensuring clean bus isolation. Read/write timing adheres to strict tRC = 45 ns, tAA = 45 ns, and tHZOE ≤ 18 ns specifications under CMOS-level signaling.

Key Specifications

Pinout & Package

Package: 48-ball Very Thin Fine-Pitch Ball Grid Array (VFBGA), 6 mm × 8 mm, 0.5 mm pitch, RoHS-compliant.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar SRAM applications.

Compared with IS61LV10248AL-10TLI and AS6C8008-55TIN, CY62158EV30LL-45ZSXIT uniquely balances 45 ns speed, 2.2–3.6 V flexibility, dual CE power gating, and 2 µA standby-making it optimal for battery-backed, thermally demanding, or mixed-voltage embedded systems.

Availability

CY62158EV30LL-45ZSXIT is available at Aetrix Electronics and suitable for industrial data loggers, portable medical monitors, ruggedized telemetry transceivers, and smart grid edge controllers requiring stable component supply across extended product lifecycles.

Supply support for CY62158EV30LL-45ZSXIT includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a global semiconductor leader headquartered in Munich, Germany, delivering power systems, sensing, connectivity, and security solutions for automotive, industrial, and IoT markets.

This device belongs to the MoBL™ (More Battery Life) SRAM product line, engineered specifically for ultra-low-power, battery-operated embedded systems where memory retention, standby efficiency, and thermal resilience are critical.

FAQ

What is the maximum clock frequency supported by CY62158EV30LL-45ZSXIT?

CY62158EV30LL-45ZSXIT is a static RAM and does not use a clock signal. Its maximum operational speed is defined by access time: 45 ns read/write cycle time corresponds to an effective maximum interface frequency of ~22 MHz for continuous random access. Timing is governed by CE, OE, and WE setup/hold relationships-not a system clock.

Does CY62158EV30LL-45ZSXIT require external refresh circuitry?

No. As a CMOS static RAM, CY62158EV30LL-45ZSXIT retains data indefinitely as long as VCC remains within specification and CE1/CE2 are held inactive (for standby) or active (for access). Unlike DRAM, it contains no capacitive storage cells and needs zero refresh cycles or external refresh controllers.

Can CY62158EV30LL-45ZSXIT operate at 1.8 V?

No. The absolute minimum supply voltage is 2.2 V per datasheet Section "Operating Range". Operation below 2.2 V violates electrical specifications: data retention drops below 1.5 V, ISB2 increases unpredictably, and tRC/tAA timing margins collapse. For 1.8 V systems, consider Infineon's newer MoBL-3 series or alternate low-voltage SRAM families.

Is the 48-ball VFBGA package lead-free and RoHS compliant?

Yes. The "Z" suffix in CY62158EV30LL-45ZSXIT explicitly denotes lead-free (Pb-free) construction. The VFBGA package uses matte tin surface finish, complies with RoHS Directive 2011/65/EU, and meets JEDEC J-STD-020D moisture sensitivity level 3 (MSL-3) for standard SMT reflow processes.