Infineon Technologies CY62158G30-45BVXIT

Overview

CY62158G30-45BVXIT from Infineon Technologies (formerly Cypress) is an 8-Mbit (1M × 8-bit) MoBL SRAM with embedded single-bit error-correcting code (ECC), operating at 45 ns access time across 2.2–3.6 V supply, featuring ultra-low standby current (1.4 µA typ), TTL-compatible I/O, and 1.0-V data retention for battery-backed memory backup in industrial control systems.

For engineers reviewing the CY62158G30-45BVXIT datasheet, CY62158G30-45BVXIT pinout, CY62158G30-45BVXIT application, or CY62158G30-45BVXIT equivalent, key selection criteria include ECC support without automatic write-back, dual chip enable architecture, VFBGA-48 package compatibility, and industrial temperature range (–40 °C to +85 °C) operation.

Technical Context

This SRAM implements a synchronous, address-decoded 1M × 8-bit array with dedicated ECC encoder/decoder logic that detects and corrects single-bit errors on read, but does not perform automatic write-back-error correction requires host-level intervention. The device uses two independent chip enables (CE1 active-low, CE2 active-high) for hierarchical memory mapping and supports high-impedance I/O during deselect, OE disable, or write cycles.

It operates within a 2.2–3.6 V VCC range with guaranteed 45 ns access time at max speed, delivers 18 mA typical operating current at f_max, and maintains data integrity down to 1.0 V for extended retention during brown-out conditions-critical for fail-safe logging in programmable logic controllers and edge sensor nodes.

Key Specifications

Pinout & Package

The CY62158G30-45BVXIT is packaged in a 48-ball Very Thin Fine-Pitch Ball Grid Array (VFBGA) measuring 6 mm × 8 mm × 1 mm, optimized for high-density industrial PCBs with thermal resistance Θ_JA = 36.92 °C/W (still air).

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar SRAM with ECC applications.

Compared with IS61WV10248BLL-10MLI and AS6C1008-55ZIN, CY62158G30-45BVXIT uniquely delivers integrated ECC with hardware ERR signaling and 1.0-V data retention-enabling certified safety functions without host CPU overhead or external components.

Availability

CY62158G30-45BVXIT is available at Aetrix Electronics and suitable for industrial programmable logic controllers, medical diagnostic equipment, railway signaling recorders, and avionics health monitors requiring stable component supply across extended product lifecycles.

Supply support for CY62158G30-45BVXIT includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a global semiconductor leader headquartered in Munich, Germany, specializing in power management, automotive MCUs, and memory solutions for industrial and safety-critical applications.

CY62158G30-45BVXIT belongs to Infineon's MoBL (Mobile Low-power) SRAM product line, engineered specifically for battery-backed, ECC-protected memory in harsh-environment embedded systems demanding long-term reliability and data integrity.

FAQ

Does CY62158G30-45BVXIT support automatic error correction write-back?

No. The device detects and corrects single-bit errors on read but does not automatically rewrite corrected data to memory. The ERR pin signals error occurrence, requiring host firmware to read the affected location, apply correction, and optionally rewrite. This design avoids unintended write cycles during transient faults and preserves deterministic timing behavior.

What is the function of the ERR pin, and how should it be interfaced?

The ERR pin is an open-drain output that goes LOW when a single-bit error is detected during a read operation. It must be externally pulled up to VCC via a 4.7 kΩ resistor. Host logic monitors this pin synchronously with read cycles; no internal debouncing or latching is provided, so firmware must sample ERR immediately after valid data appears on I/O pins.

Can CY62158G30-45BVXIT operate reliably at 2.2 V while delivering 45 ns access time?

Yes. The 45 ns access time is fully specified and guaranteed across the entire 2.2–3.6 V VCC range per the datasheet's AC switching characteristics table. At 2.2 V, propagation delays remain within spec due to adaptive internal timing circuits-no derating is required for timing-critical interfaces like ARM Cortex-M7 FSMC buses.

How does the dual chip enable (CE1/CE2) architecture improve system design flexibility?

CE1 (active-low) and CE2 (active-high) operate independently, allowing memory-mapped peripherals or FPGA logic to decode multiple address ranges using simple AND/NAND gates. This eliminates need for complex address comparators and supports bank-switching schemes in resource-constrained microcontrollers-e.g., enabling separate code and data banks in bootloaders with minimal gate count.