Send an Inquiry

To receive a quote for your project, please fill in the following information, and we’ll get back to you promptly.

Name*
Company*
Email Address*
Phone/WhatsApp
Part Number*
Quantity*
Message
Submit Inventory List

Please fill in the following information, and we’ll get back to you promptly.

Name*
Company*
Email Address*
Phone/WhatsApp
Upload My List
Message

Infineon Technologies CY62158G30-45ZSXI

Part No.:
CY62158G30-45ZSXI
Manufacturer:
Infineon Technologies
Category:
Memory
Package:
44-TSOP (0.400", 10.16mm Width)
Datasheet:
AetrixCY62158G30-45ZSXI.pdf
Description:
IC SRAM 8MBIT PARALLEL 44TSOP II
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:2,891

Please send an inquiry. Send us your inquiry, and we will respond immediately.

Part Number
Quantity*
Price
Name*
Company
Email*
Comments

Product details

Overview

CY62158G30-45ZSXI from Infineon Technologies (formerly Cypress) is a MoBL 8-Mbit (1M × 8-bit) CMOS static RAM with embedded single-bit error-correcting code (ECC), operating at 45 ns access time over 2.2–3.6 V supply, featuring ultra-low standby current (1.4 µA typ), TTL-compatible I/O, and 1.0-V data retention - deployed in industrial control modules requiring high reliability under voltage brownout conditions.

For engineers reviewing the CY62158G30-45ZSXI datasheet, CY62158G30-45ZSXI pinout, CY62158G30-45ZSXI application, or CY62158G30-45ZSXI equivalent, key selection criteria include ECC support for memory integrity, dual chip enable architecture for flexible memory mapping, 44-pin TSOP II package compatibility, and industrial-grade temperature range (–40 °C to +85 °C).

Technical Context

This SRAM implements a synchronous, asynchronous read/write interface with dual chip enables (CE1 active-low, CE2 active-high) and separate OE/WE controls, enabling precise bank selection and bus isolation. Its ECC logic operates inline during read cycles, detecting and correcting single-bit errors without CPU intervention or write-back overhead.

The device uses a 20-bit address bus (A0–A19) to access 1M × 8-bit memory space and integrates dedicated sense amplifiers, row/column decoders, and ECC encoders/decoders on-die. It supports automatic power-down mode when either CE1 is deasserted or CE2 is disabled, reducing ISB2 to ≤6.5 µA at +85 °C.

Key Specifications

ParameterValue and Actual Design Meaning
Memory Density8 Mbit (1,048,576 × 8-bit) - supports full byte-wide data transfers without external multiplexing
Access Time45 ns - ensures timing compliance in 22.22 MHz burst-read systems with setup/hold margins
Supply Voltage2.2 V to 3.6 V - compatible with 2.5 V and 3.3 V logic domains and brownout-tolerant operation
Standby Current6.5 µA max at +85 °C - enables multi-year battery-backed operation in low-power industrial logging
ECC FunctionSingle-bit error correction (no automatic write-back) - maintains data integrity without memory controller modification
Data Retention1.0 V minimum VCC - preserves contents during deep sleep or partial power loss down to 1 V
I/O InterfaceTTL-compatible inputs/outputs - interoperable with legacy microcontrollers and FPGAs without level-shifting

Pinout & Package

Package: 44-pin Thin Small Outline Package Type II (TSOP II), 12.0 mm × 20.0 mm × 1.2 mm body, lead-free, RoHS-compliant.

Pin/TerminalCircuit RoleDesign Meaning
A0–A19Address Inputs20-bit address bus selecting one of 1M byte locations; no internal latching - requires stable address during CE1/CE2 assertion
I/O0–I/O7Bidirectional Data Bus8-bit TTL-compatible data path; high-impedance when CE1 HIGH, CE2 LOW, or OE HIGH - enables shared bus topology
CE1, CE2Dual Chip EnablesCE1 active-low + CE2 active-high required for device selection; allows hierarchical memory decoding with minimal glue logic
OEOutput EnableActive-low control for output drivers only; independent of WE - supports read-modify-write without bus contention
WEWrite EnableActive-low signal initiating write cycle; must be held LOW during address/data valid window per AC timing spec
VCC, VSSPower SupplySingle 2.2–3.6 V supply; two VCC and two VSS pins reduce IR drop and improve noise immunity in high-speed operation

Key Features

FeatureDesign Value
Embedded ECC LogicOn-die Hamming-code encoder/decoder corrects single-bit errors in real time without CPU overhead or latency penalty
Ultra-Low Standby Power1.4 µA typical ISB2 at 25 °C enables >10-year battery life in always-on monitoring nodes
Dual Chip Enable ArchitectureIndependent CE1/CE2 logic permits seamless integration into multi-bank memory maps without external gating
1.0-V Data RetentionRetains stored data down to 1.0 V supply - critical for fail-safe state preservation during power collapse
TTL-Compatible I/OMeets VIH ≥ 2.2 V and VOL ≤ 0.4 V specs across full VCC range - eliminates need for level translators in mixed-voltage systems

Applications

Industrial PLC Memory BufferMedical Diagnostic Data Cache

Use Scenario: Stores real-time sensor fusion outputs and configuration registers in programmable logic controllers during firmware updates.

IC Role / Device Role / Timing Role: Byte-wide SRAM buffer with ECC protection ensuring deterministic data integrity during hot-swappable module reconfiguration.

Use Value: Prevents silent data corruption in mission-critical control loops where uncorrected memory errors could trigger unsafe actuator states.

Use Scenario: Caches raw imaging frames from ultrasound transducer arrays before DSP processing in portable diagnostic devices.

IC Role / Device Role / Timing Role: Low-latency, low-power frame buffer supporting 45 ns random-access reads while maintaining battery runtime.

Use Value: Enables continuous acquisition without frame loss during transient voltage sags common in battery-powered medical equipment.

Railway Signaling Event LoggerAvionics Health Monitor RAM

Use Scenario: Logs train position, speed, and signaling status with timestamp stamps in EN 5012x-certified trackside units.

IC Role / Device Role / Timing Role: Nonvolatile-retentive memory holding last-known safe state during 12–24 V DC input dropout events.

Use Value: Guarantees post-failure forensic traceability by preserving critical event logs even after 1.0-V brownout conditions.

Use Scenario: Stores flight-critical health metrics (voltage, temperature, vibration) in DO-254-compliant avionics subsystems.

IC Role / Device Role / Timing Role: Radiation-tolerant SRAM with ECC used for real-time telemetry buffering between sensor acquisition and ARINC 429 transmission.

Use Value: Mitigates single-event upsets (SEUs) in airborne environments without requiring software-level scrubbing routines.

Equivalent & Alternatives

The following parts are listed as comparable options for similar SRAM with ECC applications.

Alternative PartTechnical DifferenceApplication DifferenceSelection Advice
IS61WV10248BLL-10MLINo integrated ECC; 10 ns faster access but higher 30 mA ICC and no 1.0-V retentionSuitable for non-safety-critical high-speed buffers where ECC is implemented externallySelect when speed outweighs reliability requirements and external ECC logic is acceptable
AS6C8008-55TIN55 ns access, no ECC, 3.3 V only, 20 µA ISB - lacks voltage flexibility and error resilienceUsed in cost-sensitive consumer electronics where data integrity is not safety-criticalChoose only for legacy designs already committed to AS6C family footprint and no ECC need

Compared with IS61WV10248BLL-10MLI and AS6C8008-55TIN, CY62158G30-45ZSXI uniquely delivers ECC, 1.0-V retention, and industrial temperature support in a single 44-pin TSOP II package - making it the sole option for safety-aware embedded systems requiring zero-error memory operation under brownout stress.

Availability

CY62158G30-45ZSXI is available at Aetrix Electronics and suitable for industrial PLC memory buffers, medical diagnostic data caches, railway event loggers, and avionics health monitor RAM requiring stable component supply across extended product lifecycles.

Supply support for CY62158G30-45ZSXI includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a global semiconductor leader headquartered in Munich, Germany, specializing in power management, automotive ICs, and memory solutions with strong industrial and safety-critical system focus.

CY62158G30-45ZSXI belongs to Infineon's MoBL (Mobile Bitline) SRAM product line, engineered specifically for ultra-low-power, high-reliability embedded applications where data integrity and voltage resilience are mandatory - not just performance-optimized memory.

FAQ

Does CY62158G30-45ZSXI support automatic error correction during write operations?

No. The device performs ECC encoding on write and decoding/correction on read only. It does not implement automatic write-back on error detection, meaning corrected data remains in the read path but is not rewritten to memory unless explicitly commanded by the host system. This design minimizes latency and avoids unintended write cycles during error recovery.

Can CY62158G30-45ZSXI operate reliably at 2.2 V across its full industrial temperature range?

Yes. The datasheet specifies full functionality - including 45 ns access time, ECC operation, and 6.5 µA max ISB2 - over –40 °C to +85 °C at VCC = 2.2 V to 3.6 V. All AC and DC parameters are guaranteed across this range, with no derating required at minimum supply voltage.

What is the function of the NC pins in the 44-pin TSOP II package?

The NC (No Connect) pins - located at positions 31, 32, 36, 35, 34, 33, 37, 40, 39, 38, 12, 13, 41, 44, 43, and 42 - are not bonded to the die and serve no electrical function. They are reserved for potential future pin expansion in higher-density derivatives and must remain unconnected in PCB layout to avoid parasitic coupling or EMI issues.

Is thermal resistance data provided for the 44-pin TSOP II package?

Yes. For the 44-pin TSOP II variant, ΘJA (junction-to-ambient) is 66.93 °C/W and ΘJC (junction-to-case) is 13.09 °C/W, measured on a standard 3 × 4.5 inch, four-layer PCB in still air. These values enable accurate junction temperature estimation under worst-case power dissipation (25 mA ICC at 3.6 V = 90 mW).

CY62158G30-45ZSXI Specifications

Product attributes
Attribute value
Manufacturer:
Infineon Technologies
Series:
MOBL™
Package/Case:
44-TSOP (0.400", 10.16mm Width)
Packaging:
Tray
Product Status:
Active
Programmable:
Not Verified
Memory Type:
Volatile
Memory Format:
SRAM
Technology:
SRAM - Asynchronous
Memory Size:
8Mbit
Memory Organization:
1M x 8
Memory Interface:
Parallel
Clock Frequency:
-
Write Cycle Time - Word, Page:
45ns
Access Time:
45 ns
Voltage - Supply:
2.2V ~ 3.6V
Operating Temperature:
-40°C ~ 85°C (TA)
Grade:
-
Qualification:
-
Mounting Type:
Surface Mount
Supplier Device Package:
44-TSOP II

CY62158G30-45ZSXI FAQ

1.How can I place an order for CY62158G30-45ZSXI through Aetrix?

Please submit a Request for Quotation (RFQ) for CY62158G30-45ZSXI on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for CY62158G30-45ZSXI reliable?

The price and inventory of CY62158G30-45ZSXI are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for CY62158G30-45ZSXI is usually 5 days.

3.What payment methods are accepted for CY62158G30-45ZSXI?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for CY62158G30-45ZSXI transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for CY62158G30-45ZSXI?

CY62158G30-45ZSXI orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your CY62158G30-45ZSXI order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for CY62158G30-45ZSXI?

For technical support, including CY62158G30-45ZSXI datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your CY62158G30-45ZSXI requirements.

6.How does Aetrix verify that CY62158G30-45ZSXI is sourced from the original manufacturer or authorized distributors?

All CY62158G30-45ZSXI products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that CY62158G30-45ZSXI meets industry standards.

7.What is the process for return or replacement of CY62158G30-45ZSXI?

All CY62158G30-45ZSXI units undergo pre-shipment inspection (PSI). If there is an issue with CY62158G30-45ZSXI, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The CY62158G30-45ZSXI part is unused and in its original packaging.

Return procedure for CY62158G30-45ZSXI:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

CY62158G30-45ZSXI Tags

  • CY62158G30-45ZSXI
  • CY62158G30-45ZSXI PDF
  • CY62158G30-45ZSXI Datasheet
  • CY62158G30-45ZSXI Specifications
  • CY62158G30-45ZSXI Images
  • Infineon Technologies
  • Infineon Technologies CY62158G30-45ZSXI
  • Buy CY62158G30-45ZSXI
  • CY62158G30-45ZSXI Price
  • CY62158G30-45ZSXI Distributor
  • CY62158G30-45ZSXI Supplier
  • CY62158G30-45ZSXI Wholesale
Related Products
M24C02-WMN6TP
M24C02-WMN6TP

STMicroelectronics

AT24C02C-XHM-T
AT24C02C-XHM-T

Microchip Technology

AT21CS01-STUM10-T
AT21CS01-STUM10-T

Microchip Technology

AT24C02C-SSHM-T
AT24C02C-SSHM-T

Microchip Technology

24LC01BT-I/OT
24LC01BT-I/OT

Microchip Technology

M24C02-FMC6TG
M24C02-FMC6TG

STMicroelectronics

AT24CS02-SSHM-T
AT24CS02-SSHM-T

Microchip Technology

93LC46BT-I/OT
93LC46BT-I/OT

Microchip Technology

AT24C04C-SSHM-T
AT24C04C-SSHM-T

Microchip Technology

24LC01BT-I/SN
24LC01BT-I/SN

Microchip Technology

24AA02UIDT-I/OT
24AA02UIDT-I/OT

Microchip Technology

AT24C08C-STUM-T
AT24C08C-STUM-T

Microchip Technology

Tech Hub

Search

Search

PRODUCT

PRODUCT

PHONE

PHONE

USER

USER