Infineon Technologies CY62158G30-45ZSXIT

Overview

CY62158G30-45ZSXIT from Infineon Technologies (formerly Cypress) is an 8-Mbit (1M × 8-bit) MoBL SRAM with embedded single-bit error-correcting code (ECC), operating at 45 ns access time over 2.2–3.6 V supply, featuring ultra-low standby current (1.4 µA typical), TTL-compatible I/O, and 1.0-V data retention - deployed in industrial control modules requiring fault-tolerant memory for firmware storage and real-time data buffering.

For engineers reviewing the CY62158G30-45ZSXIT datasheet, CY62158G30-45ZSXIT pinout, CY62158G30-45ZSXIT application, or CY62158G30-45ZSXIT equivalent, key selection criteria include ECC support for soft-error mitigation, dual-chip-enable interface timing, VFBGA-48 package compatibility, and industrial-grade temperature operation (–40 °C to +85 °C).

Technical Context

The device implements a synchronous CMOS SRAM core with dedicated ECC encoder/decoder logic that detects and corrects single-bit errors on read operations without automatic write-back. It uses dual chip enables (CE1 active-low, CE2 active-high) for hierarchical memory mapping and supports standard asynchronous read/write cycles with OE and WE controls.

Its logic block integrates row/column decoders for 1M-word addressing (A0–A19), sense amplifiers with ECC syndrome generation, and TTL-compatible drivers delivering VOH ≥ 2.4 V (at IOH = –1.0 mA) and VOL ≤ 0.4 V (at IOL = 2.1 mA) under full voltage range (2.2–3.6 V).

Key Specifications

Pinout & Package

Package: 48-ball Very Thin Fine-Pitch Ball Grid Array (VFBGA), 6 mm × 8 mm × 1 mm, RoHS-compliant, lead-free.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar SRAM with ECC applications.

Compared with IS61WV10248BLL-10MLI and R1EX24128ASAS0I, CY62158G30-45ZSXIT uniquely delivers integrated hardware ECC, 45 ns deterministic latency, and industrial VFBGA packaging - making it the sole option among the three for parallel-interface, fault-tolerant, medium-speed memory in embedded control.

Availability

CY62158G30-45ZSXIT is available at Aetrix Electronics and suitable for industrial PLCs, medical imaging devices, automotive ADAS sensor hubs, and smart energy meters requiring stable component supply across extended product lifecycles.

Supply support for CY62158G30-45ZSXIT includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a global semiconductor leader headquartered in Munich, Germany, specializing in power management, automotive MCUs, and memory solutions derived from its acquisition of Cypress Semiconductor.

CY62158G30-45ZSXIT belongs to the MoBL (Mobile Low-power) SRAM product line, engineered specifically for battery-sensitive and mission-critical embedded systems demanding ECC protection without sacrificing access speed or footprint efficiency.

FAQ

Does CY62158G30-45ZSXIT support automatic error correction write-back?

No. The device detects and corrects single-bit errors on read operations only; corrected data is presented to the bus but not written back to the array. System-level firmware must handle persistent error logging or initiate refresh if repeated errors occur on the same address. This behavior is explicitly documented in Note 1 of the datasheet.

What is the function of the ERR pin, and how should it be terminated?

The ERR pin is an open-drain output that asserts LOW when a single-bit error is detected during a read cycle. If unused, it must be left floating per datasheet Note 6; connecting it to VCC or ground may cause contention or false interrupts. External pull-up is required only if the host system monitors this signal for error reporting.

Can CY62158G30-45ZSXIT operate reliably at 2.2 V while delivering full 45 ns access time?

Yes. The 45 ns access time is specified across the entire 2.2–3.6 V VCC range per the "Product Portfolio" table on page 2 of the datasheet. Electrical characteristics including VOH, VOL, and timing parameters are guaranteed at VCC = 2.2 V, enabling robust operation in low-voltage battery-powered designs.

How does the dual CE interface (CE1/CE2) differ from single CE SRAMs in system design?

CE1 (active-low) and CE2 (active-high) must both be asserted simultaneously for access, allowing hierarchical memory decoding - e.g., CE2 tied to a higher-order address bit and CE1 driven by a decoder output. This eliminates race conditions common with single CE timing and simplifies glue logic in multi-chip memory systems, as confirmed in the Functional Description section.