Infineon Technologies CY62158GE30-45BVXIT

Overview

CY62158GE30-45BVXIT from Infineon Technologies (formerly Cypress) is an 8-Mbit (1M × 8-bit) MoBL SRAM with embedded single-bit error-correcting code (ECC), operating at 45 ns access time across 2.2–3.6 V supply, featuring ultra-low standby current (1.4 µA typical), TTL-compatible I/O, and 1.0-V data retention for battery-backed memory hold. It is used in industrial control modules requiring fault-tolerant, low-power volatile storage.

For engineers reviewing the CY62158GE30-45BVXIT datasheet, CY62158GE30-45BVXIT pinout, CY62158GE30-45BVXIT application, or CY62158GE30-45BVXIT equivalent, key selection criteria include ECC support for reliability-critical systems, VFBGA-48 package footprint compatibility, 45 ns timing under industrial temperature range (–40 °C to +85 °C), and dual chip enable (CE1/CE2) control logic for flexible memory mapping.

Technical Context

This SRAM implements a synchronous, CMOS-based 1M × 8-bit array with dedicated ECC encoder/decoder circuitry that detects and corrects single-bit errors on read operations-without automatic write-back. The ERR output pin signals uncorrectable multi-bit errors, enabling system-level fault escalation.

It uses dual chip enable architecture (CE1 active-low, CE2 active-high) for precise bank selection and supports standard asynchronous read/write cycles with OE and WE controls. Address decoding covers A0–A19 (20-bit), and I/O pins I/O0–I/O7 serve as bidirectional data bus with high-impedance tri-state control during deselect or write.

Key Specifications

Pinout & Package

Package: 48-ball Very Thin Fine-Pitch Ball Grid Array (VFBGA), 6 mm × 8 mm × 1 mm body, JEDEC MO-276 compliant, suitable for high-density PCB layouts.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar ECC SRAM applications.

Compared with IS62WV10248BLL-45NLI and NVTFS10248L35T, CY62158GE30-45BVXIT uniquely delivers hardware ECC in a low-standby, industrial-temp SRAM without NV overhead or external logic dependency-making it optimal for integrity-first embedded buffers where power and space are constrained.

Availability

CY62158GE30-45BVXIT is available at Aetrix Electronics and suitable for industrial PLC data buffering, medical imaging cache, railway signaling controllers, and avionics flight data recorders requiring stable component supply across long product lifecycles.

Supply support for CY62158GE30-45BVXIT includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a global semiconductor leader headquartered in Munich, Germany, specializing in power management, sensing, connectivity, and memory solutions for industrial, automotive, and IoT markets.

This part belongs to the MoBL (Mobile Low-power) SRAM product line, designed specifically for battery-sensitive, reliability-critical embedded systems needing ECC-protected volatile memory with sub-µA standby and industrial temperature resilience.

FAQ

What is the function of the ERR pin on CY62158GE30-45BVXIT?

The ERR pin is an open-drain output that asserts HIGH when the internal ECC decoder detects an uncorrectable multi-bit error in a read word. It does not trigger automatic correction or retry; instead, it signals the host controller to initiate error-handling procedures such as data retransmission or system reset. The pin must be pulled up externally and left floating if unused, per datasheet guidance.

Does CY62158GE30-45BVXIT support automatic error correction during write operations?

No. The embedded ECC engine operates only on read data: it decodes stored bits, corrects single-bit errors in real time, and outputs corrected data on I/O0–I/O7. Write operations do not involve ECC encoding or verification; the device writes raw data directly to the array. Error detection and correction are read-time functions only, and no write-back or scrubbing occurs.

Can CY62158GE30-45BVXIT operate at 1.8 V supply voltage?

No. The device is specified for 2.2 V to 3.6 V operation only. At 1.8 V, internal logic thresholds and sense amplifier margins fall outside guaranteed functionality, resulting in undefined behavior, increased access time, or failure to retain data-even at room temperature. Operation below 2.2 V violates absolute maximum ratings and voids reliability guarantees.

How does the dual chip enable (CE1/CE2) architecture improve system design?

The CE1 (active-low) and CE2 (active-high) pair enables precise hierarchical memory decoding without external logic gates. For example, CE2 can be tied to a higher-order address bit to partition memory space, while CE1 serves as local select-reducing address decode complexity and minimizing propagation delay. This architecture also supports seamless integration into legacy bus systems using standard 3-state control protocols.