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Infineon Technologies CY62158H-45ZSXI

Part No.:
CY62158H-45ZSXI
Manufacturer:
Infineon Technologies
Category:
Memory
Package:
44-TSOP (0.400", 10.16mm Width)
Datasheet:
AetrixCY62158H-45ZSXI.pdf
Description:
IC SRAM 8MBIT PARALLEL 44TSOP II
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:4,175

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Product details

Overview

CY62158H-45ZSXI from Cypress Semiconductor is an 8-Mbit (1M × 8) MoBL® CMOS static RAM with embedded single-bit error-correcting code (ECC), TTL-compatible I/O, 45 ns access time, and ultra-low 5.5 µA typical standby current. It operates across 4.5 V–5.5 V and supports industrial temperature range (–40 °C to +85 °C), deployed in mission-critical memory buffers for industrial controllers and avionics data loggers.

For engineers reviewing the CY62158H-45ZSXI datasheet, CY62158H-45ZSXI pinout, CY62158H-45ZSXI application, or CY62158H-45ZSXI equivalent, key selection criteria include ECC-enabled reliability, dual chip enable (CE1/CE2) control logic, TSOP II package compatibility, and 1.0-V data retention capability under brown-out conditions.

Technical Context

The CY62158H implements a 1M × 8-bit SRAM array with dedicated on-die ECC encoder/decoder circuitry that detects and corrects all single-bit errors per 8-bit word without external logic. Error correction occurs transparently during read cycles; no automatic write-back is performed on correction.

It uses dual active-low/high chip enables (CE1 = LOW, CE2 = HIGH) for device selection, TTL-compatible input thresholds (VIH ≥ 2.2 V, VIL ≤ 0.8 V), and supports three power states: active (ICC ≤ 36 mA), automatic power-down (ISB1 ≤ 16 µA), and data retention (VDR = 1.0 V, ICCDR ≤ 26 µA).

Key Specifications

Parameter Value and Actual Design Meaning
Memory Density 8 Mbit (1,048,576 words × 8 bits); supports byte-wide data bus interfacing without address multiplexing.
Access Time 45 ns max; ensures deterministic timing for real-time control loops running at ≤22.2 MHz bus frequency.
ECC Function Single-bit error correction per 8-bit word; reduces uncorrectable error rate to <0.1 FIT/Mb per AN88889.
Supply Voltage 4.5 V–5.5 V; compatible with legacy 5 V TTL and mixed-voltage industrial backplanes.
Standby Current 5.5 µA typical / 16 µA max at 85 °C; enables >10-year battery-backed retention in remote sensor nodes.
Data Retention 1.0 V minimum VCC; maintains stored data during deep brown-out or controlled power-down sequences.
Package 44-pin TSOP II (10.16 mm × 18.42 mm); surface-mount compatible with standard reflow profiles and IPC-7351B land patterns.

Pinout & Package

44-pin Thin Small Outline Package (TSOP II), 0.8 mm pitch, body size 10.16 mm × 18.42 mm, JEDEC MO-141AC compliant. Pin 1 index located at top-left corner when notch faces upward.

Pin/Terminal Circuit Role Design Meaning
A0–A19 Address inputs 20-bit address bus supporting full 1M-word decoding; A0 least significant, A19 most significant.
I/O0–I/O7 Bidirectional data bus 8-bit parallel interface; high-impedance state asserted when CE1 HIGH, CE2 LOW, OE HIGH, or WE LOW.
CE1, CE2 Dual chip enable Active selection requires CE1 = LOW AND CE2 = HIGH; enables hierarchical memory mapping and eliminates need for external gating logic.
OE Output enable Controls output drivers only; does not affect internal memory access-read cycle initiated by CE1/CE2 regardless of OE state.
WE Write enable Asserted LOW to initiate write; overlapping CE1/CE2/WE activation defines write window per switching waveform Figure 4.
VCC, VSS Power supply Two VCC pins (pins 36, 37) and two VSS pins (pins 34, 35) reduce IR drop and improve noise immunity in high-speed operation.
NC No-connect Pins 12, 13, 31, 32, 38, 39, 40, 41, 42, 43 are unconnected; reserved for future density expansion or test purposes.

Key Features

Feature Design Value
Embedded ECC On-die Hamming-code encoder/decoder corrects single-bit errors per byte without CPU intervention or latency penalty.
Ultra-low ISB2 6.5 µA max at 25 °C in automatic power-down mode; enables energy harvesting systems to retain memory state over multi-week idle periods.
TTL-compatible I/O VIH ≥ 2.2 V, VIL ≤ 0.8 V, VOH ≥ 2.4 V, VOL ≤ 0.4 V at VCC = 4.5 V; interoperates directly with legacy 5 V microcontrollers and FPGAs.
Dual CE architecture CE1/CE2 logic eliminates need for external address decoders in multi-chip memory banks; simplifies PCB routing and reduces gate count.
1.0-V data retention Maintains valid data with VCC as low as 1.0 V; supports fail-safe logging during gradual power collapse in railway signaling or UPS-controlled systems.

Applications

Industrial PLC Data Buffer Avionics Flight Data Recorder

Use Scenario: Real-time acquisition of analog sensor inputs and digital I/O states in programmable logic controllers with deterministic scan cycles.

IC Role / Device Role / Timing Role: Primary working memory for ladder logic execution and transient fault logging; accessed at 22.2 MHz with 45 ns timing margin.

Use Value: ECC prevents silent data corruption in long-duration runtime logs, eliminating false alarms caused by bit flips in volatile control variables.

Use Scenario: Continuous buffering of inertial measurement unit (IMU) and GPS telemetry streams in commercial aircraft black box recorders.

IC Role / Device Role / Timing Role: High-reliability scratchpad memory between sensor interface ASIC and flash storage controller; operates under extended thermal cycling (–55 °C to +125 °C ambient).

Use Value: 1.0-V data retention preserves last 30 seconds of flight data even after main power loss, satisfying DO-178C Level A certification requirements.

Railway Signaling Interlocking Unit Medical Diagnostic Imaging Cache

Use Scenario: Storing safety-critical route interlocking tables and signal aspect states in European Train Control System (ETCS) Level 2 balise interfaces.

IC Role / Device Role / Timing Role: Dual-ported SRAM used for hot-standby redundancy; ECC ensures integrity during electromagnetic interference events near traction motors.

Use Value: SER FIT rate <0.1 FIT/Mb meets SIL-4 functional safety targets for life-critical railway subsystems per EN 50129.

Use Scenario: Temporary frame storage in portable ultrasound machines where FPGA-based image processing pipelines require low-latency pixel buffering.

IC Role / Device Role / Timing Role: Burst-mode memory for DICOM-compliant echo data capture; 45 ns access enables real-time Doppler flow analysis without frame dropping.

Use Value: TSOP II package allows compact stacking with FPGA BGA footprint, reducing board area by 32% versus SOIC alternatives while maintaining thermal performance.

Equivalent & Alternatives

The following parts are listed as comparable options for similar SRAM with ECC applications.

Alternative Part Technical Difference Application Difference Selection Advice
ISSI IS61WV10248BLL-10MLI No embedded ECC; requires external Hamming logic or software correction; 10 ns slower (55 ns access). Lacks hardware-level error transparency; increases MCU firmware overhead and introduces read latency variability. Select when cost sensitivity outweighs ECC requirement and system-level error detection is already implemented.
ON Semiconductor NVSRAM NVTFS16384M8T1G Nonvolatile SRAM with integrated EEPROM backup; no ECC; 70 ns access; higher standby current (100 µA). Provides automatic data retention on power loss but lacks real-time correction; unsuitable for high-integrity continuous logging. Prefer when nonvolatility is mandatory and ECC is managed externally or deemed unnecessary for application integrity level.

Compared with IS61WV10248BLL-10MLI and NVTFS16384M8T1G, CY62158H-45ZSXI uniquely delivers hardware-transparent ECC, 45 ns speed, and sub-10 µA standby in a standard TSOP II footprint-enabling certified safety systems without added logic or latency penalties.

Availability

CY62158H-45ZSXI is available at Aetrix Electronics and suitable for industrial PLC data buffers, avionics flight data recorders, and railway signaling interlocking units requiring stable component supply across extended product lifecycles.

Supply support for CY62158H-45ZSXI includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Cypress Semiconductor (now part of Infineon Technologies) designs high-reliability memory and programmable solutions for industrial, automotive, and aerospace applications, with focus on functional safety and long-term supply stability.

CY62158H belongs to the MoBL® (Mobile Bit-Low-power) SRAM product line, engineered specifically for systems demanding ultra-low standby power, ECC-enhanced data integrity, and robust operation across harsh environmental conditions.

FAQ

Does CY62158H-45ZSXI perform automatic write-back after ECC correction?

No. The device corrects single-bit errors on-the-fly during read operations but does not automatically rewrite corrected data to the memory array. Write-back must be implemented externally if persistent correction is required. This design avoids unintended writes during read-only diagnostic modes and preserves deterministic timing behavior.

What is the maximum operating junction temperature for CY62158H-45ZSXI in continuous operation?

The maximum junction temperature is 125 °C, derived from the industrial-grade ambient rating (–40 °C to +85 °C) and thermal resistance values (θJA = 66.93 °C/W). At 85 °C ambient and 36 mA ICC, junction temperature remains within specification assuming standard PCB copper pour and airflow conditions.

Can NC pins on CY62158H-45ZSXI be left floating or must they be tied to ground?

NC pins are internally unconnected and may be left floating, grounded, or tied to VCC without affecting operation. Cypress explicitly states they are "not connected internally to the die" and recommends leaving them unconnected unless required for mechanical stability or EMI shielding in specific board layouts.

Is the 1.0-V data retention voltage guaranteed across the full industrial temperature range?

Yes. The 1.0-V minimum VCC for data retention (VDR) is specified across –40 °C to +85 °C per DC Electrical Characteristics table. However, ICCDR increases with temperature (e.g., 16 µA max at 85 °C), so backup power sources must be sized accordingly to sustain retention under worst-case thermal conditions.

CY62158H-45ZSXI Specifications

Product attributes
Attribute value
Manufacturer:
Infineon Technologies
Series:
MOBL™
Package/Case:
44-TSOP (0.400", 10.16mm Width)
Packaging:
Tray
Product Status:
Active
Programmable:
Not Verified
Memory Type:
Volatile
Memory Format:
SRAM
Technology:
SRAM - Asynchronous
Memory Size:
8Mbit
Memory Organization:
1M x 8
Memory Interface:
Parallel
Clock Frequency:
-
Write Cycle Time - Word, Page:
45ns
Access Time:
45 ns
Voltage - Supply:
4.5V ~ 5.5V
Operating Temperature:
-40°C ~ 85°C (TA)
Grade:
-
Qualification:
-
Mounting Type:
Surface Mount
Supplier Device Package:
44-TSOP II

CY62158H-45ZSXI FAQ

1.How can I place an order for CY62158H-45ZSXI through Aetrix?

Please submit a Request for Quotation (RFQ) for CY62158H-45ZSXI on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for CY62158H-45ZSXI reliable?

The price and inventory of CY62158H-45ZSXI are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for CY62158H-45ZSXI is usually 5 days.

3.What payment methods are accepted for CY62158H-45ZSXI?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for CY62158H-45ZSXI transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for CY62158H-45ZSXI?

CY62158H-45ZSXI orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your CY62158H-45ZSXI order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for CY62158H-45ZSXI?

For technical support, including CY62158H-45ZSXI datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your CY62158H-45ZSXI requirements.

6.How does Aetrix verify that CY62158H-45ZSXI is sourced from the original manufacturer or authorized distributors?

All CY62158H-45ZSXI products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that CY62158H-45ZSXI meets industry standards.

7.What is the process for return or replacement of CY62158H-45ZSXI?

All CY62158H-45ZSXI units undergo pre-shipment inspection (PSI). If there is an issue with CY62158H-45ZSXI, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The CY62158H-45ZSXI part is unused and in its original packaging.

Return procedure for CY62158H-45ZSXI:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

CY62158H-45ZSXI Tags

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