Infineon Technologies CY62162G18-55BGXIT

Overview

CY62162G18-55BGXIT from Infineon Technologies (formerly Cypress) is a 16-Mbit MoBL® SRAM organized as 512K × 32 with embedded single-bit error-correcting code (ECC), 55 ns access time, 1.65–2.2 V supply range, and ultra-low standby current (max 26 µA). It serves as a high-reliability, low-power data buffer in portable industrial controllers requiring ECC-enabled memory retention.

For engineers reviewing the CY62162G18-55BGXIT datasheet, CY62162G18-55BGXIT pinout, CY62162G18-55BGXIT application, or CY62162G18-55BGXIT equivalent, key selection criteria include dual chip enable support, ERR pin assertion on single-bit correction, 119-ball PBGA package compatibility, and automatic power-down behavior under address stall conditions.

Technical Context

This SRAM implements a CMOS-based 512K × 32 memory array with dedicated ECC encoder/decoder circuitry that detects and corrects single-bit errors during read operations without host intervention. The ERR pin asserts HIGH only when correction occurs - no automatic write-back is performed.

It supports two independent chip enables (CE1, CE2) and four byte enables (BA–BD) for flexible 8-bit sub-word access across I/O0–I/O31. Power management includes automatic entry into standby mode when CE1 is HIGH, CE2 is LOW, or any byte enable is HIGH - reducing ICC to ≤26 µA.

Key Specifications

Pinout & Package

The CY62162G18-55BGXIT is housed in a 119-ball fine-pitch PBGA package with center power/ground ball layout optimized for signal integrity and thermal performance. Pin assignments follow JEDEC MO-270AB standard.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar ECC SRAM applications.

Compared with IS61WV102432BLL-10MLI and NCS21162G18-55BGXIT, CY62162G18-55BGXIT uniquely balances ultra-low standby power (26 µA), real-time ERR signaling, and industrial temperature support - making it optimal for battery-constrained ECC-critical applications where power efficiency and error visibility are co-primary requirements.

Availability

CY62162G18-55BGXIT is available at Aetrix Electronics and suitable for industrial PLC data buffering, medical wearable sensor caching, and smart grid edge controller designs requiring stable component supply and long-term lifecycle assurance.

Supply support for CY62162G18-55BGXIT includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies acquired Cypress Semiconductor in 2020 and maintains its MoBL® (More Battery Life™) SRAM portfolio for ultra-low-power memory solutions.

This device belongs to the MoBL® SRAM product line, engineered specifically for portable and energy-sensitive applications where ECC reliability and sub-30 µA standby current are system-level design requirements.

FAQ

Does CY62162G18-55BGXIT support automatic write-back after ECC correction?

No. The device performs single-bit error detection and correction in hardware but does not automatically rewrite the corrected data back to the memory array. Host software must initiate a write cycle if persistent correction is required. This design minimizes power consumption and avoids unintended write amplification in battery-operated systems.

What is the function of the ERR pin, and how should it be interfaced?

The ERR pin is an open-drain output that asserts HIGH only during successful single-bit error correction. It must be externally pulled up to VCC with a 4.7 kΩ resistor. When asserted, it can trigger a processor interrupt or log event. The pin remains HIGH for the duration of the read cycle in which correction occurred and returns LOW immediately thereafter.

Can CY62162G18-55BGXIT operate across both 1.8 V and 3.3 V I/O domains?

No. It operates exclusively within one VCC range: either 1.65–2.2 V (industrial grade) or 2.2–3.6 V (not supported by this specific variant). The CY62162G18-55BGXIT is rated for 1.65–2.2 V only. Interfacing with 3.3 V logic requires level translation on all I/O, CE, OE, WE, and BA–BD signals to prevent overvoltage damage.

How does automatic power-down reduce current consumption?

When addresses remain static for one clock cycle (i.e., no toggling on A0–A18), the internal logic enters automatic power-down mode, disabling array precharge and sense amplifiers. This cuts ICC from typical 29 mA (active) to ≤26 µA (standby), achieving >99% reduction without requiring external control signals or mode register writes.