Infineon Technologies CY62162G30-45BGXI

Overview

CY62162G30-45BGXI from Infineon Technologies (formerly Cypress) is a 16-Mbit MoBL® SRAM organized as 512K × 32 with embedded single-bit error-correcting code (ECC), 45 ns access time, 1.65–3.6 V dual-voltage operation, and ultra-low standby current (5.5 µA typical). It serves as a high-reliability, low-power data buffer in portable industrial controllers requiring ECC-protected memory.

For engineers reviewing the CY62162G30-45BGXI datasheet, CY62162G30-45BGXI pinout, CY62162G30-45BGXI application, or CY62162G30-45BGXI equivalent, key selection criteria include ECC-enabled bit-error resilience, dual chip enable for memory expansion, 119-ball PBGA package compatibility, and automatic power-down behavior under address inactivity.

Technical Context

This SRAM implements a CMOS-based 512K × 32 architecture with dedicated ECC encoder/decoder logic that detects and corrects single-bit errors during read operations without host intervention. The ERR pin asserts HIGH upon correction, enabling real-time fault reporting to the host processor.

It supports two independent chip enables (CE1, CE2) and four byte enables (BA–BD) for flexible 8-bit sub-word access across the 32-bit bus. Power management includes automatic power-down when CE1/CE2/BA–BD are inactive, reducing ICC to ≤16 µA at VCC = 2.2–3.6 V.

Key Specifications

Pinout & Package

Package: 119-ball Fine-Pitch Ball Grid Array (FBGA), 10 mm × 13 mm, center power/ground pinout, RoHS-compliant.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar ECC SRAM applications.

Compared with IS61WV102432BLL-10MLI and MT48LC16M32B2B5-6A:J, CY62162G30-45BGXI uniquely delivers hardware ECC, ultra-low µA standby, and true SRAM simplicity - making it optimal for safety-critical, battery-limited edge devices where data integrity cannot be offloaded to software.

Availability

CY62162G30-45BGXI is available at Aetrix Electronics and suitable for medical wearables, industrial PLCs, avionics recorders, and smart energy meters requiring stable component supply, long-term lifecycle support, and guaranteed ECC functionality.

Supply support for CY62162G30-45BGXI includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a global semiconductor leader headquartered in Munich, Germany, specializing in power management, automotive ICs, and memory solutions with strong industrial and safety-critical focus.

CY62162G30-45BGXI belongs to the MoBL® (More Battery Life™) SRAM product line, designed specifically for ultra-low-power, ECC-enhanced memory in portable and mission-critical embedded systems.

FAQ

Does CY62162G30-45BGXI support automatic error correction without host intervention?

Yes - the device performs single-bit error detection and correction autonomously during read cycles using on-die ECC logic. However, it does not perform automatic write-back; the ERR pin asserts HIGH to notify the host, which may then initiate corrective action or logging.

What is the function of the dual chip enables (CE1 and CE2)?

CE1 is active-LOW and CE2 is active-HIGH; both must be asserted simultaneously (CE1 LOW, CE2 HIGH) for normal operation. This dual-enable scheme enables hierarchical memory mapping in multi-chip systems and prevents partial selection glitches during address transitions.

Can CY62162G30-45BGXI operate at 1.8 V and still meet 45 ns access time?

No - the 45 ns speed grade is specified only for the 2.2–3.6 V VCC range. At 1.65–2.2 V, the device is rated for 55 ns access time (CY62162G18 variant); attempting 45 ns timing at 1.8 V violates AC specifications and risks data invalidation.

Is the ERR pin open-drain, and what pull-up value is recommended?

Yes - ERR is an open-drain output requiring an external pull-up resistor. A 4.7 kΩ resistor to VCC is recommended per Cypress application guidance; this ensures fast rise time while limiting current to <100 µA during assertion.