Infineon Technologies CY62162G30-45BGXIT

Overview

CY62162G30-45BGXIT from Infineon Technologies (formerly Cypress) is a 16-Mbit MoBL® SRAM organized as 512K × 32 bits with embedded single-bit error-correcting code (ECC), 45 ns access time, 1.65–3.6 V dual-voltage operation, and ultra-low 5.5 µA typical standby current. It serves as a high-reliability, low-power data buffer in portable industrial controllers requiring ECC protection and battery longevity.

For engineers reviewing the CY62162G30-45BGXIT datasheet, CY62162G30-45BGXIT pinout, CY62162G30-45BGXIT application, or CY62162G30-45BGXIT equivalent, key selection criteria include ECC-enabled single-bit correction, dual chip enable (CE1/CE2) for memory expansion, ERR output assertion on correction, 119-ball PBGA package compatibility, and automatic power-down mode reducing active current by >99% when deselected.

Technical Context

This SRAM implements a CMOS-based 512K × 32-bit array with dedicated ECC encoder/decoder circuitry that detects and corrects single-bit errors during read operations without host intervention. The ERR pin asserts HIGH only upon successful single-bit correction - no automatic write-back is performed.

It supports four independent byte enables (BA–BD) for granular 8-bit writes across I/O0–I/O31, and features dual chip enables (CE1 active-low, CE2 active-high) enabling seamless bank expansion. Standby is entered when CE1 is HIGH, CE2 is LOW, or any byte enable is HIGH, placing all I/Os in high-impedance state.

Key Specifications

Pinout & Package

The CY62162G30-45BGXIT is housed in a 119-ball plastic ball grid array (PBGA) package with center power/ground ball placement to minimize IR drop and improve signal integrity. Pin functions are validated per Infineon Document 001-81598 Rev. *F (Pages 5–6).

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar ECC SRAM applications.

Compared with IS61WV102432BLL-10MLI and MT47H64M4BQ-37E:H, CY62162G30-45BGXIT uniquely delivers autonomous single-bit correction in an asynchronous SRAM interface with sub-µA standby - essential for safety-critical, battery-constrained, or maintenance-free deployments.

Availability

CY62162G30-45BGXIT is available at Aetrix Electronics and suitable for industrial PLC data buffering, portable medical monitor memory, automotive ADAS sensor hubs, and smart meter firmware caching requiring stable component supply across extended product lifecycles.

Supply support for CY62162G30-45BGXIT includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a global semiconductor leader headquartered in Munich, Germany, specializing in power management, sensing, connectivity, and security solutions for industrial, automotive, and IoT markets.

CY62162G30-45BGXIT belongs to Infineon's MoBL® (More Battery Life™) SRAM product line, engineered specifically for ultra-low-power, high-reliability embedded systems where ECC-protected memory and nanowatt standby operation are mandatory.

FAQ

Does CY62162G30-45BGXIT support automatic write-back after ECC correction?

No. The device detects and corrects single-bit errors during read operations and asserts the ERR pin, but it does not perform automatic write-back to memory. Host firmware must initiate a write cycle if persistent correction is required. This design minimizes unintended writes and preserves memory endurance in battery-operated systems.

What is the function of the ERR pin, and how should it be terminated?

The ERR pin is an open-drain output that drives HIGH only when a single-bit error is detected and corrected during a read cycle. It must be externally pulled up to VCC via a 4.7 kΩ resistor. Leaving ERR floating is acceptable if error monitoring is unused, per datasheet Note 4.

Can CY62162G30-45BGXIT operate reliably at 1.65 V supply?

Yes. The device is fully specified for 1.65–2.2 V operation, with 55 ns access time guaranteed at 1.65 V. At this voltage, typical standby current is 7 µA (max 26 µA), and data retention holds down to 1.0 V - making it suitable for energy-harvesting and ultra-low-voltage designs.

How does the dual chip enable (CE1/CE2) simplify memory expansion?

CE1 (active-low) and CE2 (active-high) allow two independent enable conditions: CE1=LOW + CE2=HIGH enables the device, while other combinations disable it. This permits hierarchical decoding - e.g., using CE2 to select a memory bank and CE1 to select individual chips within that bank - reducing address decoder complexity in multi-MB systems.