Infineon Technologies CY62167DV18LL-55BVXIT

Overview

CY62167DV18LL-55BVXIT from Cypress Semiconductor is a 16-Mbit (1M × 16) low-voltage CMOS static RAM with 55 ns access time, 1.65V–1.95V supply range, and ultra-low active current (1.5 mA @ 1 MHz). It features dual chip enables (CE1/CE2), byte-level control (BHE/BLE), and automatic power-down for portable memory buffering in battery-constrained systems.

For engineers reviewing the CY62167DV18LL-55BVXIT datasheet, CY62167DV18LL-55BVXIT pinout, CY62167DV18LL-55BVXIT application, or CY62167DV18LL-55BVXIT equivalent, this device supports high-speed, low-power SRAM interfacing in mobile baseband processors, handheld medical monitors, and industrial data loggers where standby current <20 µA and fast read/write timing are critical.

Technical Context

This SRAM implements a synchronous, non-volatile-retention-free CMOS architecture with independent byte-enable control and dual CE logic (CE1 active-low, CE2 active-high) enabling flexible memory mapping and bank selection. Its automatic power-down circuit reduces ICC to ≤20 µA when CE1 is HIGH or CE2 is LOW - independent of address toggling.

The device uses a 1M × 16 organization with 20-bit address bus (A0–A19), 16-bit bidirectional I/O (IO0–IO15), and tri-state outputs controlled by OE, BHE, BLE, and CE states. All timing parameters - including tRC = 55 ns, tAA = 55 ns, and tDOE = 25 ns - are guaranteed over full industrial temperature (–40°C to +85°C) and voltage (1.65V–1.95V) ranges.

Key Specifications

Pinout & Package

48-ball Very Thin Fine-Pitch Ball Grid Array (VFBGA) package with 0.8 mm ball pitch, 6 mm × 8 mm body size, and JEDEC MO-220 compliant footprint. Thermal resistance Θ_JA = 55 °C/W (2-layer board).

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar SRAM applications.

Compared with IS62WV102416BLL-55NLI and NVTFS1616G16T3G, CY62167DV18LL-55BVXIT uniquely balances ultra-low standby current (2.5 µA typ), VFBGA miniaturization, and deterministic 55 ns timing - making it optimal for new designs prioritizing size, battery life, and timing predictability over nonvolatile retention.

Availability

CY62167DV18LL-55BVXIT is available at Aetrix Electronics and suitable for mobile baseband processing, portable medical monitoring, and industrial data logging requiring stable component supply, long-term lifecycle support, and Pb-free compliance.

Supply support for CY62167DV18LL-55BVXIT includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Cypress Semiconductor (now part of Infineon Technologies) is a U.S.-based semiconductor company specializing in high-performance memory, microcontrollers, and programmable solutions for embedded systems.

The MoBL® (More Battery Life) SRAM product line was engineered specifically for ultra-low-power portable electronics, emphasizing sub-20 µA standby current, 1.8 V compatibility, and fast access without compromising reliability.

FAQ

What is the minimum V_CC required for data retention in CY62167DV18LL-55BVXIT?

The device guarantees data retention down to V_DR = 1.0 V, as specified in the Data Retention Characteristics table. At this voltage, ICCDR is limited to 10 µA maximum, enabling extended hold time on depleted batteries or capacitor-based backup rails without data loss.

Can CY62167DV18LL-55BVXIT operate with CE1 and CE2 both asserted simultaneously?

No - the functional description explicitly defines active operation only when CE1 is LOW *and* CE2 is HIGH. If both are asserted (CE1 LOW and CE2 LOW), the device enters high-impedance state and disables outputs; simultaneous assertion violates the truth table and may cause undefined behavior or increased leakage.

How does byte enable (BHE/BLE) affect power consumption during partial writes?

Asserting only BHE or BLE (not both) reduces dynamic power by ~50% per write cycle, since only eight I/O drivers switch instead of sixteen. The device's ICC active current scales linearly with toggling I/O count, confirmed by typical 1.5 mA @ 1 MHz (low activity) versus 15 mA @ f_MAX (full bus activity).

Is the 48-ball VFBGA package RoHS and REACH compliant?

Yes - the "-55BVXIT" suffix denotes Pb-free (RoHS-compliant) packaging per J-STD-609, with NiPdAu surface finish. The device meets REACH SVHC thresholds and carries full material declarations traceable to Infineon's component database.