Infineon Technologies CY62167DV30LL-45ZXI

Overview

CY62167DV30LL-45ZXI from Cypress Semiconductor is a 16-Mbit (1M × 16 or 2M × 8 configurable) MoBL® CMOS static RAM with 45 ns access time, 2.2–3.6 V supply range, ultra-low active current (18.5 mA at f_Max), and automatic CE-based power-down reducing standby current to 2.5 µA. It serves as main data buffer in battery-powered handheld devices requiring fast, low-power memory with byte-level write control.

For engineers reviewing the CY62167DV30LL-45ZXI datasheet, CY62167DV30LL-45ZXI pinout, CY62167DV30LL-45ZXI application, or CY62167DV30LL-45ZXI equivalent, key selection criteria include TSOP I package compatibility, dual-byte enable (BHE/ BLE) timing alignment, 45 ns read/write cycle constraints, and industrial temperature support (–40°C to +85°C).

Technical Context

This SRAM implements a 1M × 16 / 2M × 8 configurable memory array with independent Byte High Enable (BHE) and Byte Low Enable (BLE) inputs enabling selective 8-bit writes without read-modify-write overhead. Its automatic power-down activates when CE1 is HIGH or CE2 is LOW, cutting ICC to ≤22 µA.

The device uses CMOS circuitry optimized for speed/power trade-off: 45 ns t_RC at 30 pF load, 25 ns t_DOE, and 15 ns t_HZOE output disable delay. Address-to-data valid (t_AA) and CE-to-output valid (t_ACE) are both 45 ns, ensuring deterministic timing in synchronous bus interfaces.

Key Specifications

Pinout & Package

48-pin TSOP I (Type I, forward) package with 0.5 mm pitch, JEDEC MO-141AC compliant. Pin 1 marked by notch; top view orientation per datasheet Figure 1.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar SRAM applications.

Compared with IS62WV102416BLL-45NLI and NCS21167D-45Z, CY62167DV30LL-45ZXI uniquely delivers 45 ns performance with sub-3 µA standby and automatic hardware power-down - critical for battery runtime optimization in portable instrumentation.

Availability

CY62167DV30LL-45ZXI is available at Aetrix Electronics and suitable for portable medical devices, industrial human-machine interfaces, and wireless sensor gateways requiring stable component supply, long-term lifecycle assurance, and industrial temperature compliance.

Supply support for CY62167DV30LL-45ZXI includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Cypress Semiconductor (now part of Infineon Technologies) designs high-performance, low-power semiconductor solutions for embedded systems, connectivity, and memory applications.

CY62167DV30 belongs to the MoBL® (More Battery Life) SRAM product line, engineered specifically for portable electronics where extended battery life, fast access, and industrial reliability are co-primary requirements.

FAQ

What is the correct voltage level for the BYTE pin to configure CY62167DV30LL-45ZXI as a 1M × 16 device?

The BYTE pin must be tied to V_CC (2.2–3.6 V) to configure the device in 1M × 16 mode. In this configuration, A20 is not used, and pins I/O8–I/O15, BHE, and BLE function as active high-byte data/control signals. Pulling BYTE to V_SS enables 2M × 8 mode, repurposing pin 45 as A20 and disabling high-byte I/O functionality.

How does automatic power-down activate, and what is its impact on data retention?

Automatic power-down triggers when CE1 is driven HIGH or CE2 is driven LOW - no software or additional control signals required. During this state, ICC drops to ≤22 µA, and data is retained as long as V_CC ≥ 1.5 V. The device exits power-down within 0 ns (t_PU = 0) upon valid CE assertion, resuming full operation without initialization delay.

Can CY62167DV30LL-45ZXI operate reliably at 2.2 V while maintaining 45 ns access time?

Yes - the 45 ns speed grade is fully specified and tested over the entire 2.2–3.6 V V_CC range. Electrical characteristics tables confirm t_RC, t_AA, and t_ACE remain ≤45 ns at V_CC = 2.2 V, TA = –40°C to +85°C, with CMOS input levels and 30 pF load, meeting industrial timing guarantees.

What is the role of DNU (Do Not Use) pins, and how should they be handled on the PCB?

DNU pins (e.g., pin 46 "DNU" in TSOP I) are physically present but not connected internally - they must be left floating with no trace routing or solder mask opening. Connecting them risks signal coupling or unintended current paths. NC (No Connect) pins like A16 on some variants are similarly unconnected and require identical floating treatment per datasheet Note 3.