Infineon Technologies CY62167DV30LL-45ZXIT
- Part No.:
- CY62167DV30LL-45ZXIT
- Manufacturer:
- Infineon Technologies
- Category:
- Memory
- Package:
- 48-TFSOP (0.724", 18.40mm Width)
- Datasheet:
-
CY62167DV30LL-45ZXIT.pdf
- Description:
- IC SRAM 16MBIT PARALLEL 48TSOP I
- Quantity:
- Payment:

- Shipping:

Inventory:2,449
Please send an inquiry. Send us your inquiry, and we will respond immediately.
Product details
Overview
CY62167DV30LL-45ZXIT from Cypress Semiconductor is a 16-Mbit (1M × 16 or 2M × 8) MoBL® CMOS static RAM with 45 ns access time, 2.2–3.6 V supply range, and ultra-low active current (18.5 mA at fMax). It supports byte-wide write enable via BHE/ BLE, automatic CE-based power-down, and operates across –40°C to +85°C for industrial portable memory applications.
For engineers reviewing the CY62167DV30LL-45ZXIT datasheet, CY62167DV30LL-45ZXIT pinout, CY62167DV30LL-45ZXIT application, or CY62167DV30LL-45ZXIT equivalent, key selection criteria include TSOP I package compatibility, dual-configurable density (1M×16/2M×8), sub-25 µA standby current, MoBL® low-power architecture, and industrial temperature support.
Technical Context
This SRAM implements a high-speed, low-voltage CMOS core with separate Byte High Enable (BHE) and Byte Low Enable (BLE) inputs for independent 8-bit writes, and dual chip enables (CE1/CE2) enabling flexible memory expansion and hierarchical select control. The device uses address-controlled and OE-controlled read cycles with guaranteed tAA = tACE = 45 ns.
Power management includes automatic CE-triggered power-down reducing ICC to 2.5 µA typical, plus data retention down to VDR = 1.5 V with ICCDR ≤ 10 µA. All timing parameters are specified under 30 pF load and 1 V/ns edge rates per JEDEC-compliant AC test conditions.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Memory Density | 16 Mbit (configurable as 1M × 16 or 2M × 8) |
| Access Time | 45 ns - guarantees full-speed operation up to ~22 MHz bus frequency |
| VCC Range | 2.2 V – 3.6 V - compatible with 2.5 V and 3.3 V logic domains without level shifters |
| ICC Active (fMax) | 18.5 mA typical - enables battery-powered operation with predictable peak current draw |
| ISB2 Standby | 2.5 µA typical - supports multi-week data retention in sleep modes |
| Operating Temp | –40°C to +85°C - qualified for industrial-grade embedded systems |
| tHZOE / tHZCE | 15 ns max - ensures fast output disable for bus sharing and multiplexed data paths |
Pinout & Package
Package: 48-pin TSOP I (Type I, forward pinout), RoHS-compliant, surface-mountable with 0.5 mm pitch.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| A0–A19 | Address Inputs | 20-bit address bus supporting full 1M-word addressing in 16-bit mode; A20 repurposed as I/O15 in 2M×8 mode |
| I/O0–I/O15 | Bidirectional Data Bus | 16-bit parallel interface; high-impedance when deselected, OE HIGH, or during write |
| CE1, CE2 | Chip Enable Controls | Active-Low CE1 and Active-High CE2 enable hierarchical memory banking and seamless expansion |
| OE | Output Enable | Controls read-data output drive; HIGH forces I/Os into high-Z regardless of CE state |
| WE | Write Enable | Low-active signal initiating write cycle; timing-critical for setup/hold compliance |
| BHE, BLE | Byte Enable Inputs | Independent 8-bit write masking: BLE enables I/O0–I/O7; BHE enables I/O8–I/O15 |
| BYTE | Mode Configuration | Tied to VCC for 1M×16 mode; tied to VSS for 2M×8 mode (reassigns Pin 45 as A20) |
Key Features
| Feature | Design Value |
|---|---|
| MoBL® Ultra-Low Power Architecture | Reduces active current to 18.5 mA at 45 ns speed and standby to 2.5 µA - extends battery life in portable devices |
| Dual-Configurable Memory Organization | Hardware-selectable 1M×16 or 2M×8 via BYTE pin - eliminates need for external logic or redesign when scaling capacity |
| Automatic CE-Based Power-Down | Enters 99% power-reduction state when CE1 HIGH or CE2 LOW - no software or external control required |
| Byte-Wide Write Control | Independent BHE/ BLE pins allow simultaneous or selective 8-bit writes - improves efficiency in mixed-data-width systems |
| Industrial Temperature Support | Guaranteed operation from –40°C to +85°C - suitable for automotive infotainment, industrial HMIs, and medical portables |
Applications
| Cellular Handset Memory | Portable Medical Monitor Buffer |
|---|---|
Use Scenario: Stores real-time sensor data and UI frame buffers in GSM/3G handsets with tight power budgets. IC Role / Device Role / Timing Role: Primary working memory interfaced to baseband processor via 16-bit bus; 45 ns access meets burst-read latency targets. Use Value: MoBL® low ICC and 2.5 µA ISB2 enable >12-hour standby on single-cell Li-ion without compromising responsiveness. |
Use Scenario: Holds ECG waveform samples and display refresh data in handheld diagnostic devices. IC Role / Device Role / Timing Role: Dual-port-accessible SRAM buffer between ADC controller and LCD driver; BYTE pin configured for 2M×8 to match 8-bit microcontroller bus. Use Value: Automatic CE power-down cuts background current below 3 µA during patient idle periods, extending clinical use per charge. |
| Industrial PLC Data Cache | Automotive Infotainment RAM |
Use Scenario: Caches I/O status and ladder logic variables in DIN-rail mounted programmable logic controllers. IC Role / Device Role / Timing Role: Nonvolatile backup SRAM (with external battery) providing deterministic 45 ns read/write for scan-cycle execution. Use Value: –40°C to +85°C rating and 2.2–3.6 V operation ensure reliable behavior across factory floor thermal swings and brownout conditions. |
Use Scenario: Serves as graphics frame buffer and audio FIFO in head-unit systems with CAN-connected displays. IC Role / Device Role / Timing Role: 16-bit wide interface synchronized to ARM Cortex-A MCU; BHE/ BLE used for partial updates to reduce bus contention. Use Value: TSOP I package allows compact layout near SoC; low 8 pF CIN minimizes signal integrity impact on high-speed traces. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar SRAM applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| ISSI IS62WV102416BLL-45NLI | Same density, 45 ns, 2.5–3.6 V; higher standby current (15 µA typ); no BYTE pin or 2M×8 mode | Lacks configurable organization - requires fixed 1M×16 layout; less flexible for legacy 8-bit bus upgrades | Select when strict 1M×16 usage is confirmed and lower ISB2 is not required. |
| ON Semiconductor MC14LC5480DW | 16-Mbit, 55 ns, 4.5–5.5 V only; TTL-compatible; no low-voltage or MoBL® power features | Requires level translation for 3.3 V systems; unsuitable for battery operation due to 5 V minimum VCC | Choose only for legacy 5 V industrial designs where voltage compatibility outweighs power savings. |
Compared with IS62WV102416BLL-45NLI and MC14LC5480DW, CY62167DV30LL-45ZXIT uniquely delivers 2.2 V operation, sub-3 µA standby, and hardware-switchable 1M×16/2M×8 modes - making it the sole option for power-constrained, multi-bus-compatible portable industrial memory.
Availability
CY62167DV30LL-45ZXIT is available at Aetrix Electronics and suitable for cellular handset memory, portable medical monitor buffers, and industrial PLC data caches requiring stable component supply, long-term lifecycle support, and RoHS-compliant TSOP I packaging.
Supply support for CY62167DV30LL-45ZXIT includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Cypress Semiconductor (now part of Infineon Technologies) is a U.S.-based semiconductor company specializing in high-performance memory, PSoC, and USB solutions for embedded systems.
CY62167DV30 belongs to the MoBL® (More Battery Life) SRAM product line, engineered specifically for ultra-low-power, high-speed memory in portable and battery-operated industrial electronics.
FAQ
What is the function of the BYTE pin on CY62167DV30LL-45ZXIT?
The BYTE pin configures memory organization: tied to VCC for 1M × 16 mode (standard), or to VSS for 2M × 8 mode (reassigning Pin 45 as A20). In 2M×8 mode, BHE, BLE, and I/O8–I/O14 become no-connect; only I/O0–I/O7 remain active. This hardware-selectable feature avoids external logic or firmware changes.
Does CY62167DV30LL-45ZXIT support true 3.3 V-only operation?
Yes - it operates across 2.2 V to 3.6 V, fully compliant with 3.3 V ±10% (2.97–3.63 V) supply rails. All AC/DC specifications, including 45 ns access time and 18.5 mA ICC, are guaranteed at VCC = 3.0 V and 3.3 V. No derating is required within this range.
How does automatic power-down work without external control signals?
Power-down activates automatically when CE1 is HIGH or CE2 is LOW - no clock, timer, or software command needed. Internal circuitry reduces ICC to 2.5 µA typical by gating core array bias and disabling drivers. Recovery time (tPU) is 0 ns, enabling immediate access upon re-enable.
Can CY62167DV30LL-45ZXIT be used in place of older 5 V SRAMs like the 6264?
No - it is not pin- or voltage-compatible with 5 V SRAMs. Its 2.2–3.6 V operation, TSOP I footprint, and dual CE architecture differ fundamentally from 28-pin DIP 5 V parts. Direct replacement requires board redesign, level translation, and timing validation due to different access protocols and enable logic.
CY62167DV30LL-45ZXIT Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Infineon Technologies
- Series:
- MOBL™
- Package/Case:
- 48-TFSOP (0.724", 18.40mm Width)
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Obsolete
- Programmable:
- Not Verified
- Memory Type:
- Volatile
- Memory Format:
- SRAM
- Technology:
- SRAM - Asynchronous
- Memory Size:
- 16Mbit
- Memory Organization:
- 1M x 16
- Memory Interface:
- Parallel
- Clock Frequency:
- -
- Write Cycle Time - Word, Page:
- 45ns
- Access Time:
- 45 ns
- Voltage - Supply:
- 2.2V ~ 3.6V
- Operating Temperature:
- -40°C ~ 85°C (TA)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 48-TSOP I
CY62167DV30LL-45ZXIT FAQ
1.How can I place an order for CY62167DV30LL-45ZXIT through Aetrix?
Please submit a Request for Quotation (RFQ) for CY62167DV30LL-45ZXIT on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for CY62167DV30LL-45ZXIT reliable?
The price and inventory of CY62167DV30LL-45ZXIT are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for CY62167DV30LL-45ZXIT is usually 5 days.
3.What payment methods are accepted for CY62167DV30LL-45ZXIT?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for CY62167DV30LL-45ZXIT transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for CY62167DV30LL-45ZXIT?
CY62167DV30LL-45ZXIT orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your CY62167DV30LL-45ZXIT order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for CY62167DV30LL-45ZXIT?
For technical support, including CY62167DV30LL-45ZXIT datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your CY62167DV30LL-45ZXIT requirements.
6.How does Aetrix verify that CY62167DV30LL-45ZXIT is sourced from the original manufacturer or authorized distributors?
All CY62167DV30LL-45ZXIT products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that CY62167DV30LL-45ZXIT meets industry standards.
7.What is the process for return or replacement of CY62167DV30LL-45ZXIT?
All CY62167DV30LL-45ZXIT units undergo pre-shipment inspection (PSI). If there is an issue with CY62167DV30LL-45ZXIT, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The CY62167DV30LL-45ZXIT part is unused and in its original packaging.
Return procedure for CY62167DV30LL-45ZXIT:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
CY62167DV30LL-45ZXIT Tags

-
M24C02-WMN6TP
STMicroelectronics
-
AT24C02C-XHM-T
Microchip Technology

-
AT21CS01-STUM10-T
Microchip Technology

-
AT24C02C-SSHM-T
Microchip Technology

-
24LC01BT-I/OT
Microchip Technology
-
M24C02-FMC6TG
STMicroelectronics

-
AT24CS02-SSHM-T
Microchip Technology

-
93LC46BT-I/OT
Microchip Technology

-
AT24C04C-SSHM-T
Microchip Technology

-
24LC01BT-I/SN
Microchip Technology

-
24AA02UIDT-I/OT
Microchip Technology

-
AT24C08C-STUM-T
Microchip Technology
Tech Hub
An SR latch stores one bit through cross-coupled feedback. This engineering reference covers NOR and NAND implementations, truth tables, forbidden-state recovery, gated operation, switch debouncing, fa…
Latch circuits retain one bit through feedback. This technical reference covers SR and D latches, truth tables, transparency, timing limits, latch-versus-flip-flop behavior, applications and common log…
An engineering guide to LED driver operation, constant-current and constant-voltage outputs, linear and switching topologies, dimming, IC selection, calculations, replacement compatibility, and fault c…
Operational amplifier guide covering op amp basics, feedback, ideal vs real op amps, common configurations, buffer circuits, offset, bias current, gain-bandwidth, slew rate, rail-to-rail limits and sel…
Jumper cables guide covering safe connection order, red and black clamp placement, final ground connection, cable gauge, length, clamp quality, copper vs CCA cables, jump starter comparison and battery…
LDO regulator guide covering low dropout voltage, power dissipation, thermal design, PSRR, output noise, capacitor stability, adjustable LDO circuits, LDO vs buck converter and datasheet selection chec…
Conditional Access Module guide covering CAM meaning, CI/CI+ interface, smart card authorization, DVB security workflow, TV and set-top box compatibility, internal electronics, ESD protection, connecto…
Guide to electronic component obsolescence covering EOL risk, PCN/PDN notices, last-time buy planning, replacement options, form-fit-function validation, counterfeit risk and BOM lifecycle management.
18650 battery guide covering lithium-ion cell basics, 3.6V/3.7V voltage, 4.2V charging, mAh and Wh capacity, protected cells, chargers, BMS, series-parallel packs, holders, welding and sourcing checks.…
Hall effect sensor guide covering working principle, linear and digital sensors, Arduino circuits, current sensing, speed detection, automotive applications, A3144 examples, signal filtering and datash…

