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Infineon Technologies CY62167DV30LL-55BVI
- Part No.:
- CY62167DV30LL-55BVI
- Manufacturer:
- Infineon Technologies
- Category:
- Memory
- Package:
- 48-VFBGA
- Datasheet:
-
CY62167DV30LL-55BVI.pdf
- Description:
- IC SRAM 16MBIT PARALLEL 48VFBGA
- Quantity:
- Payment:
- Shipping:
Inventory:1,740
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Product details
Overview
CY62167DV30LL-55BVI from Cypress Semiconductor is a 16-Mbit (1 M × 16) MoBL® CMOS static RAM with 2.2 V–3.6 V supply range, 55 ns access time, ultra-low active current (2 mA typical at 1 MHz), and automatic power-down reducing standby current to 2.5 µA. It supports byte-wide (BHE/ BLE) and full-word read/write operations and is used in battery-powered portable electronics requiring low-power volatile memory.
For engineers reviewing the CY62167DV30LL-55BVI datasheet, CY62167DV30LL-55BVI pinout, CY62167DV30LL-55BVI application, or CY62167DV30LL-55BVI equivalent, key selection criteria include TSOP-I/VFBGA package compatibility, 1 M × 16 vs. 2 M × 8 configuration flexibility, data retention down to 1.5 V, and dual chip enable (CE1/CE2) logic for seamless memory expansion in embedded systems.
Technical Context
This SRAM implements a high-density 1 M × 16 asynchronous architecture with independent byte enable control (BHE/BLE), enabling selective 8-bit writes without disturbing adjacent bytes. Its dual CE architecture (CE1 active-low, CE2 active-high) allows hierarchical memory mapping and eliminates bus contention during multi-chip configurations.
The device uses CMOS circuitry optimized for speed/power trade-off, featuring automatic power-down triggered by address stability or chip deselect, reducing ICC to ≤2.5 µA. Data retention operates down to 1.5 V, supporting graceful low-voltage suspend modes in portable devices.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Memory Organization | 1 M × 16 (16 Mbit); configurable as 2 M × 8 via BYTE pin tie |
| Access Time | 55 ns max - guarantees deterministic read latency for real-time firmware execution |
| VCC Range | 2.2 V–3.6 V - compatible with single-supply 2.5 V/3.3 V systems and Li-ion battery discharge profiles |
| Active Current (f = 1 MHz) | 2 mA typical - enables >100-hour operation on coin-cell batteries in always-on buffer applications |
| Standby Current (ISB2) | 2.5 µA typical at 3.6 V - supports ultra-low-power sleep states in handheld medical monitors |
| Data Retention Voltage | 1.5 V min - sustains memory contents during brown-out or controlled power-down sequences |
| Package Options | 48-pin TSOP-I and 48-ball VFBGA - supports both space-constrained PCBs and rework-friendly through-hole prototyping |
Pinout & Package
Package: 48-pin Thin Small Outline Package (TSOP-I), RoHS-compliant, body size 12 mm × 20 mm × 1.2 mm.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| A0–A19 | Address Inputs | 20-bit address bus supporting 1 M word addressing; A19 required for full 1 M × 16 access |
| I/O0–I/O7 | Data Bus (Low Byte) | Bi-directional 8-bit data path enabled when BLE = LOW; isolated during write if BHE = HIGH |
| I/O8–I/O15 | Data Bus (High Byte) | Bi-directional 8-bit data path enabled when BHE = LOW; independent control prevents partial-word corruption |
| CE1, CE2 | Chip Enable (active-low / active-high) | Dual-enable logic enables daisy-chained memory banks and eliminates need for external gating logic |
| OE | Output Enable | Controls output drivers only; does not affect internal state or power mode - safe for dynamic bus sharing |
| WE | Write Enable | Active-low signal initiating write cycle; timing referenced to last active edge among CE1, CE2, BHE, BLE |
| BHE, BLE | Byte High/Low Enable | Independent 8-bit write masking - eliminates read-modify-write overhead in firmware buffers |
| BYTE | Memory Width Configuration | Tie to VCC for 1 M × 16 mode; tie to VSS for 2 M × 8 mode (A20 appears on I/O15 pin) |
Key Features
| Feature | Design Value |
|---|---|
| MoBL® Ultra-Low Power Architecture | 2 mA active current at 1 MHz and 2.5 µA standby enable continuous sensing in wearable ECG loggers |
| Configurable Memory Width | Single device supports both 16-bit microcontroller buses and 8-bit legacy peripherals via BYTE pin strap |
| Dual Chip Enable Logic | CE1/CE2 pairing allows direct connection to ARM AMBA AHB decode outputs without glue logic |
| Automatic Power-Down | 99% current reduction when addresses stall - critical for GPS tracking units with intermittent wake cycles |
| Byte-Level Write Control | BHE/BLE pins permit atomic 8-bit updates to status registers without corrupting adjacent fields in shared memory maps |
Applications
| Portable Medical Monitors | Industrial PLC Data Buffers |
|---|---|
|
Use Scenario: Continuous acquisition of analog sensor data (ECG, SpO₂) with local buffering before wireless transmission. IC Role / Device Role: Volatile high-speed buffer memory interfacing directly to ADC controller and RF SoC DMA engine. Use Value: 55 ns access time ensures zero-cycle wait states during burst sampling; 2.5 µA ISB2 extends battery life to >7 days on 200 mAh cell. |
Use Scenario: Storing real-time I/O status, ladder logic variables, and communication protocol stacks in compact DIN-rail controllers. IC Role / Device Role: Non-cached SRAM for deterministic scan-cycle execution in safety-rated control firmware. Use Value: Dual CE architecture enables seamless expansion beyond 16 KB without address decoder ICs; TSOP-I package supports conformal coating for harsh environments. |
| Wireless Handheld Terminals | Automotive Infotainment Boot Cache |
|
Use Scenario: Caching UI assets and transaction logs in barcode scanners operating on intermittent battery charge cycles. IC Role / Device Role: Low-voltage SRAM holding boot code and runtime heap during cold-start and deep-sleep transitions. Use Value: 1.5 V data retention voltage permits operation down to end-of-battery discharge; BHE/BLE enables efficient UTF-8 string updates without full-word writes. |
Use Scenario: Staging firmware images and audio buffers during fast-boot sequences in head-unit systems with strict <500 ms boot targets. IC Role / Device Role: Pre-fetch cache between NAND flash and application processor, decoupling slow storage from real-time UI rendering. Use Value: 55 ns tAA guarantees pixel data availability within first display frame; VFBGA package minimizes trace inductance for clean 3.3 V signaling at 20 MHz bus rates. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar SRAM applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| ISSI IS62WV102416BLL-55NLI | Same 1 M × 16 organization, 55 ns speed, but 2.7 V–3.6 V VCC range; no 2 M × 8 mode; higher ISB2 (5 µA typical) | Lacks BYTE-configurable width and sub-2.5 V operation - unsuitable for Li-ion discharge below 2.7 V | Select when system VCC is stable ≥2.7 V and board layout favors SOIC-44 over TSOP-I |
| ON Semiconductor NVSRAM NVTFS1624M8LFTBG | Non-volatile 16-Mbit SRAM with integrated EEPROM backup; 70 ns access; 2.7 V–3.6 V only; no automatic power-down | Provides data retention after power loss - adds cost and complexity where battery-backed volatile memory suffices | Choose only when persistent storage across power cycles is mandatory and 15 ns slower access is acceptable |
Compared with IS62WV102416BLL-55NLI and NVTFS1624M8LFTBG, CY62167DV30LL-55BVI uniquely delivers 2.2 V operation, BYTE-configurable width, and 2.5 µA standby - making it optimal for cost-sensitive, battery-constrained portable designs where non-volatility is unnecessary.
Availability
CY62167DV30LL-55BVI is available at Aetrix Electronics and suitable for portable medical monitors, industrial PLC data buffers, and wireless handheld terminals requiring stable component supply, long-lifecycle support, and RoHS-compliant packaging.
Supply support for CY62167DV30LL-55BVI includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Cypress Semiconductor (now part of Infineon Technologies) designs high-reliability memory and programmable solutions for embedded systems, emphasizing low-power innovation and automotive-grade robustness.
The MoBL® (More Battery Life) SRAM product line targets portable and energy-constrained applications, delivering industry-leading active/standby current ratios without sacrificing speed or density.
FAQ
What is the minimum VCC required to retain data in CY62167DV30LL-55BVI?
Data retention is guaranteed down to 1.5 V, as specified in the Data Retention Characteristics table. At this voltage, ICCDR remains ≤10 µA, and the device maintains stored bits without refresh. This enables use in brown-out recovery circuits and battery-failover scenarios where main supply drops below nominal operating range.
Can CY62167DV30LL-55BVI operate in 2 M × 8 mode on a 48-pin TSOP-I package?
Yes - configure by tying the BYTE pin to VSS. In this mode, pin 45 becomes A20, extending addressing to 2 M words. I/O8–I/O14, BHE, and BLE become no-connect (DNU), and only I/O0–I/O7 remain active. The device behaves as two independent 1 M × 8 banks addressed by A0–A19 and A20.
How does automatic power-down activate, and what triggers exit?
Power-down activates when CE1 is HIGH or CE2 is LOW (chip deselected) OR when both BHE and BLE are HIGH (byte enables disabled). Exit occurs on first valid address transition or CE/enable signal assertion. No external control signal is needed - the feature is fully hardware-managed with ≤55 ns tPD delay.
Is the 48-ball VFBGA package pin-compatible with the 48-pin TSOP-I version?
No - pinouts differ significantly. VFBGA assigns power/ground to interior balls and spreads I/O across perimeter rows; TSOP-I uses linear edge-pin layout with dedicated VCC/VSS rails. Signal mapping (e.g., A16, WE, OE) is preserved, but physical routing, thermal pad placement, and solder-reflow profiles are not interchangeable.
CY62167DV30LL-55BVI Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Infineon Technologies
- Series:
- MOBL™
- Package/Case:
- 48-VFBGA
- Packaging:
- Tray
- Product Status:
- Obsolete
- Programmable:
- Not Verified
- Memory Type:
- Volatile
- Memory Format:
- SRAM
- Technology:
- SRAM - Asynchronous
- Memory Size:
- 16Mbit
- Memory Organization:
- 2M x 8, 1M x 16
- Memory Interface:
- Parallel
- Clock Frequency:
- -
- Write Cycle Time - Word, Page:
- 55ns
- Access Time:
- 55 ns
- Voltage - Supply:
- 2.2V ~ 3.6V
- Operating Temperature:
- -40°C ~ 85°C (TA)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 48-VFBGA (8x9.5)
CY62167DV30LL-55BVI FAQ
1.How can I place an order for CY62167DV30LL-55BVI through Aetrix?
Please submit a Request for Quotation (RFQ) for CY62167DV30LL-55BVI on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for CY62167DV30LL-55BVI reliable?
The price and inventory of CY62167DV30LL-55BVI are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for CY62167DV30LL-55BVI is usually 5 days.
3.What payment methods are accepted for CY62167DV30LL-55BVI?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for CY62167DV30LL-55BVI transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for CY62167DV30LL-55BVI?
CY62167DV30LL-55BVI orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your CY62167DV30LL-55BVI order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for CY62167DV30LL-55BVI?
For technical support, including CY62167DV30LL-55BVI datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your CY62167DV30LL-55BVI requirements.
6.How does Aetrix verify that CY62167DV30LL-55BVI is sourced from the original manufacturer or authorized distributors?
All CY62167DV30LL-55BVI products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that CY62167DV30LL-55BVI meets industry standards.
7.What is the process for return or replacement of CY62167DV30LL-55BVI?
All CY62167DV30LL-55BVI units undergo pre-shipment inspection (PSI). If there is an issue with CY62167DV30LL-55BVI, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The CY62167DV30LL-55BVI part is unused and in its original packaging.
Return procedure for CY62167DV30LL-55BVI:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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