Infineon Technologies CY62167DV30LL-55BVIT

Overview

CY62167DV30LL-55BVIT from Cypress Semiconductor is a 16-Mbit (1 M × 16) MoBL® CMOS static RAM with ultra-low active current (2 mA typical at 1 MHz), 2.2–3.6 V supply range, and 55 ns access time. It supports byte-wide or word-wide operation via BHE/ BLE controls and features automatic power-down reducing standby current to 2.5 µA, enabling extended battery life in portable memory subsystems.

For engineers reviewing the CY62167DV30LL-55BVIT datasheet, CY62167DV30LL-55BVIT pinout, CY62167DV30LL-55BVIT application, or CY62167DV30LL-55BVIT equivalent, key selection criteria include its dual-configurable 1M×16 / 2M×8 array mapping, VFBGA/TSOP-I package options, low-voltage operation down to 2.2 V, and guaranteed 55 ns read cycle timing under industrial temperature range (–40°C to +85°C).

Technical Context

This SRAM implements a high-density 1 M × 16 asynchronous architecture with independent byte enable (BHE/BLE) logic for selective 8-bit writes, supporting both word-aligned and byte-aligned memory access without external gating. Its automatic power-down circuit activates when CE1 is HIGH or CE2 is LOW - or when both BHE and BLE are HIGH - reducing ICC to sub-µA levels without software intervention.

The device uses complementary metal oxide semiconductor (CMOS) process technology optimized for speed/power trade-off, with input/output pins entering high-impedance state during deselection, output disable (OE HIGH), write cycles (WE LOW), or simultaneous BHE/BLE deassertion. Timing is specified with 1 ns/V edge rates and VCC/2 reference levels per JEDEC AC test standards.

Key Specifications

Pinout & Package

Available in 48-ball VFBGA (6 mm × 8 mm, 0.5 mm pitch) and 48-pin TSOP-I packages. Both support identical pin functions with minor layout differences; VFBGA offers superior thermal performance (θJA = 55°C/W) and lower profile.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-density low-power SRAM applications.

Compared with IS62WV102416BLL-55TLI and R1LV0108ESB-5SI#S0, the CY62167DV30LL-55BVIT delivers unique hardware-managed power states tied directly to byte enable signals - reducing firmware complexity and enabling faster wake-from-standby (<55 ns) without external sequencers.

Availability

CY62167DV30LL-55BVIT is available at Aetrix Electronics and suitable for portable medical sensors, industrial data loggers, wearables UI frame buffers, and automotive infotainment caches requiring stable component supply across long-lifecycle deployments.

Supply support for CY62167DV30LL-55BVIT includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Cypress Semiconductor (now part of Infineon Technologies) designs high-performance, low-power memory and programmable solutions for embedded systems, with global R&D and manufacturing infrastructure.

The MoBL® (More Battery Life) SRAM product line targets portable and energy-constrained applications requiring fast, reliable, and ultra-low-power volatile memory - optimized for battery-operated instrumentation, wearables, and IoT edge nodes.

FAQ

What is the minimum VCC required to retain data in CY62167DV30LL-55BVIT?

Data retention is guaranteed down to VCC = 1.5 V, with maximum ICCDR of 10 µA under those conditions. The device enters data retention mode automatically when CE1 is HIGH or CE2 is LOW, and remains in that state until VCC rises above 1.5 V and valid address/control signals are re-applied.

Can CY62167DV30LL-55BVIT operate in 2M×8 mode using the VFBGA package?

No - the 2M×8 configuration requires A20 addressing, which is only routed to Pin 45 in the 48-pin TSOP-I package. The 48-ball VFBGA does not expose A20; it supports 1M×16 mode only. This is documented in the "Pin Configurations" section of Rev. *M datasheet, Figure 1 footnote [3].

How does automatic power-down activate when both BHE and BLE are HIGH?

When both BHE and BLE are driven HIGH, the internal logic interprets this as byte-disable condition and forces all I/O pins into high-impedance state while reducing ICC to ISB2 levels (2.5 µA typ). This occurs independently of CE1/CE2 status and is explicitly defined in the Functional Description and Truth Table sections of the datasheet.

Is CY62167DV30LL-55BVIT pin-compatible with earlier CY62167EV30 versions?

No - the DV30 revision introduces updated power-down behavior, tighter ISB2 specification (2.5 µA vs older 10 µA), and revised AC timing parameters. Pinout is identical, but system-level validation is required due to changes in standby current profile and voltage threshold tolerances per Revision *M datasheet update notes.