My Inquiry
My Account
Infineon Technologies CY62167DV30LL-55BVXIT
- Part No.:
- CY62167DV30LL-55BVXIT
- Manufacturer:
- Infineon Technologies
- Category:
- Memory
- Package:
- 48-VFBGA
- Datasheet:
-
CY62167DV30LL-55BVXIT.pdf
- Description:
- IC SRAM 16MBIT PARALLEL 48VFBGA
- Quantity:
- Payment:
- Shipping:
Inventory:867
Please send an inquiry. Send us your inquiry, and we will respond immediately.
Product details
Overview
CY62167DV30LL-55BVXIT from Cypress Semiconductor is a 16-Mbit (1 M × 16) MoBL® CMOS static RAM with ultra-low active current (2 mA typical at 1 MHz), 55 ns access time, and wide 2.2 V–3.6 V supply range. It supports byte-wide or word-wide operation via BHE/ BLE controls and features automatic power-down for battery-sensitive portable systems including cellular handsets and handheld medical devices.
For engineers reviewing the CY62167DV30LL-55BVXIT datasheet, CY62167DV30LL-55BVXIT pinout, CY62167DV30LL-55BVXIT application, or CY62167DV30LL-55BVXIT equivalent, key selection criteria include standby current (2.5 µA typ), TSOP-I/VFBGA package compatibility, 1 M × 16 / 2 M × 8 configurability, and industrial temperature support (–40 °C to +85 °C).
Technical Context
This SRAM implements dual chip enable (CE1/CE2) logic with independent byte enables (BHE/BLE) to support flexible memory mapping in 16-bit or 8-bit data buses. Its automatic power-down circuit reduces ICC by 99% when addresses are static, triggered by CE1 HIGH or CE2 LOW or both BHE/BLE HIGH.
Read and write operations are fully asynchronous and edge-triggered: read requires CE1 LOW, CE2 HIGH, OE LOW, and WE HIGH; write requires CE1 LOW, CE2 HIGH, WE LOW, and at least one of BHE/BLE LOW. I/O pins enter high-Z during deselect, output disable, or write cycles.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Memory Organization | 1 M × 16 (configurable as 2 M × 8 via BYTE pin tie) |
| Access Time | 55 ns - guarantees deterministic read latency for real-time microcontroller interfaces |
| VCC Range | 2.2 V–3.6 V - compatible with Li-ion battery discharge profiles and mixed-voltage SoC designs |
| Active Current (f = 1 MHz) | 2 mA typical - enables >100-hour operation on 200 mAh coin cell in intermittent-access mode |
| Standby Current (ISB2) | 2.5 µA typical at 3.6 V - meets ultra-low-power sleep requirements for IoT edge nodes |
| Data Retention Voltage | 1.5 V minimum - allows memory state hold during brown-out or backup-battery switchover |
| Operating Temperature | –40 °C to +85 °C - qualified for industrial-grade embedded control and automotive infotainment head units |
Pinout & Package
Package: 48-ball VFBGA (6 mm × 8 mm, 0.5 mm pitch) and 48-pin TSOP-I (12 mm × 20 mm). Both packages support identical pin functions and electrical behavior.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| A0–A19 | Address Inputs | 20-bit address bus supporting full 1 M-word addressing; A20 used only in 2 M × 8 mode (TSOP I Pin 45) |
| I/O0–I/O15 | Bidirectional Data Bus | 16-bit parallel interface; I/O0–I/O7 active when BLE = LOW; I/O8–I/O15 active when BHE = LOW |
| CE1, CE2 | Chip Enable Controls | Dual CE logic: device selected only when CE1 = LOW AND CE2 = HIGH; enables hierarchical memory decoding |
| OE | Output Enable | Controls data bus direction: OE = LOW enables read outputs; OE = HIGH forces high-Z regardless of CE state |
| WE | Write Enable | Active-LOW signal initiating write cycle; must be synchronized with CE and BHE/BLE for valid data capture |
| BHE, BLE | Byte Enable Inputs | Independent high/low byte selection; both HIGH disables I/O drivers and triggers auto power-down |
| VCC, VSS | Power Supply | Single 2.2–3.6 V supply; no separate I/O voltage required - simplifies PCB routing and power sequencing |
Key Features
| Feature | Design Value |
|---|---|
| MoBL® Ultra-Low Power Architecture | 2 mA active current at 1 MHz and 2.7 V enables multi-day battery life in portable telemetry devices |
| Automatic Power-Down Mode | Reduces ICC to 2.5 µA typical without external control signals - eliminates need for system-level sleep coordination |
| Configurable Memory Width | 1 M × 16 or 2 M × 8 via BYTE pin strap - supports legacy 8-bit microcontrollers and modern 16-bit DSPs on same BOM |
| Industrial Temperature Range | –40 °C to +85 °C operation validated per JEDEC JESD22-A104 - suitable for factory automation PLC modules |
| Pb-Free Packaging Options | RoHS-compliant VFBGA and TSOP-I variants available - meets IPC-J-STD-020 moisture sensitivity level 3 (MSL3) |
Applications
| Portable Medical Monitor | Industrial PLC Data Buffer |
|---|---|
Use Scenario: Real-time ECG waveform acquisition with local storage before wireless transmission. IC Role / Device Role / Timing Role: High-speed, low-power SRAM buffer interfacing directly to ADC controller and Bluetooth SoC. Use Value: 55 ns access time ensures zero-cycle-wait reads during burst sampling; 2.5 µA standby preserves battery during patient idle periods. | Use Scenario: Temporary storage of sensor logs and alarm history in DIN-rail mounted programmable logic controllers. IC Role / Device Role / Timing Role: Nonvolatile-cached volatile memory holding last 10,000 timestamped events with deterministic write latency. Use Value: Dual CE inputs allow clean isolation from CPU bus during firmware updates; industrial temp rating ensures reliability in uncooled enclosures. |
| Automotive Infotainment Head Unit | Wireless Sensor Node Gateway |
Use Scenario: Frame buffer for LCD display rendering in vehicle dashboard clusters with limited thermal headroom. IC Role / Device Role / Timing Role: 16-bit wide SRAM acting as pixel buffer between GPU and display controller. Use Value: 2.2–3.6 V operation accommodates automotive battery transients; TSOP-I package supports reflow-compatible assembly. | Use Scenario: Edge-processing node aggregating LoRaWAN sensor data before scheduled uplink bursts. IC Role / Device Role / Timing Role: Low-leakage scratchpad memory storing intermediate FFT coefficients and packet headers. Use Value: 1.5 V data retention threshold allows graceful shutdown during brown-out; 8 pF input capacitance minimizes signal integrity impact on MCU GPIOs. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar SRAM applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| ISSI IS62WV102416BLL-55MLI | Same 1 M × 16 organization, 55 ns speed, but uses single CE and no BHE/BLE; 2.5 V–3.6 V only | Lacks byte-select flexibility; not suitable for mixed 8/16-bit bus systems requiring partial writes | Select if board layout uses simple CE-only decode and does not require independent high/low byte control |
| ON Semiconductor NVSRAM NB16L16V55Z | Nonvolatile SRAM with integrated EEPROM backup; 55 ns access but higher 12 mA active current | Provides automatic data retention on power loss - eliminates need for external backup capacitors or batteries | Select when data persistence across power cycles is mandatory and higher active power is acceptable |
Compared with IS62WV102416BLL-55MLI and NB16L16V55Z, the CY62167DV30LL-55BVXIT uniquely balances ultra-low standby power (2.5 µA), dual-byte control, and wide voltage tolerance - making it optimal for battery-constrained, field-upgradable embedded systems where deterministic low-power operation outweighs nonvolatility needs.
Availability
CY62167DV30LL-55BVXIT is available at Aetrix Electronics and suitable for portable medical monitors, industrial PLC data buffers, and automotive infotainment head units requiring stable component supply across extended product lifecycles.
Supply support for CY62167DV30LL-55BVXIT includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Cypress Semiconductor (now part of Infineon Technologies) designs high-reliability memory and programmable solutions for industrial, automotive, and consumer electronics.
The MoBL® (More Battery Life) SRAM product line targets portable and energy-sensitive applications with optimized CMOS architecture delivering sub-mA active current and µA-level standby draw.
FAQ
What is the function of the BYTE pin on CY62167DV30LL-55BVXIT?
The BYTE pin is not present on this variant; it is internal to the die and configured by package type. In the 48-pin TSOP-I package, Pin 45 serves as A20 in 2 M × 8 mode and must be strapped to VCC for 1 M × 16 operation. The VFBGA version does not expose BYTE - configuration is fixed per ordering code suffix (LL = 1 M × 16 default).
Can CY62167DV30LL-55BVXIT operate reliably at 2.2 V?
Yes. The device is fully specified down to 2.2 V across all parameters: 55 ns access time, 2 mA typical active current, and 2.5 µA standby current are guaranteed at VCC = 2.2 V within the –40 °C to +85 °C industrial range per datasheet Table "Electrical Characteristics".
How does automatic power-down activate without software intervention?
Automatic power-down activates when CE1 is HIGH or CE2 is LOW or both BHE and BLE are HIGH - no clock or control register required. The internal circuit detects static address lines and forces the core into ultra-low-current state, reducing ICC by 99% relative to active mode.
Is the 48-ball VFBGA package lead-free and RoHS compliant?
Yes. The CY62167DV30LL-55BVXIT ordering code suffix 'VXIT' denotes a Pb-free, RoHS-compliant 48-ball VFBGA package with NiPdAu finish, qualified to JEDEC J-STD-020C MSL3 and tested per IPC/JEDEC JESD22-A108F for 1000-hour unbiased HAST reliability.
CY62167DV30LL-55BVXIT Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Infineon Technologies
- Series:
- MOBL™
- Package/Case:
- 48-VFBGA
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- Programmable:
- Not Verified
- Memory Type:
- Volatile
- Memory Format:
- SRAM
- Technology:
- SRAM - Asynchronous
- Memory Size:
- 16Mbit
- Memory Organization:
- 1M x 16
- Memory Interface:
- Parallel
- Clock Frequency:
- -
- Write Cycle Time - Word, Page:
- 55ns
- Access Time:
- 55 ns
- Voltage - Supply:
- 2.2V ~ 3.6V
- Operating Temperature:
- -40°C ~ 85°C (TA)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 48-VFBGA (8x9.5)
CY62167DV30LL-55BVXIT FAQ
1.How can I place an order for CY62167DV30LL-55BVXIT through Aetrix?
Please submit a Request for Quotation (RFQ) for CY62167DV30LL-55BVXIT on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for CY62167DV30LL-55BVXIT reliable?
The price and inventory of CY62167DV30LL-55BVXIT are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for CY62167DV30LL-55BVXIT is usually 5 days.
3.What payment methods are accepted for CY62167DV30LL-55BVXIT?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for CY62167DV30LL-55BVXIT transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for CY62167DV30LL-55BVXIT?
CY62167DV30LL-55BVXIT orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your CY62167DV30LL-55BVXIT order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for CY62167DV30LL-55BVXIT?
For technical support, including CY62167DV30LL-55BVXIT datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your CY62167DV30LL-55BVXIT requirements.
6.How does Aetrix verify that CY62167DV30LL-55BVXIT is sourced from the original manufacturer or authorized distributors?
All CY62167DV30LL-55BVXIT products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that CY62167DV30LL-55BVXIT meets industry standards.
7.What is the process for return or replacement of CY62167DV30LL-55BVXIT?
All CY62167DV30LL-55BVXIT units undergo pre-shipment inspection (PSI). If there is an issue with CY62167DV30LL-55BVXIT, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The CY62167DV30LL-55BVXIT part is unused and in its original packaging.
Return procedure for CY62167DV30LL-55BVXIT:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
CY62167DV30LL-55BVXIT Tags
-
M24C02-WMN6TP
STMicroelectronics
-
AT24C02C-XHM-T
Microchip Technology
-
AT21CS01-STUM10-T
Microchip Technology
-
AT24C02C-SSHM-T
Microchip Technology
-
24LC01BT-I/OT
Microchip Technology
-
M24C02-FMC6TG
STMicroelectronics
-
AT24CS02-SSHM-T
Microchip Technology
-
93LC46BT-I/OT
Microchip Technology
-
AT24C04C-SSHM-T
Microchip Technology
-
24LC01BT-I/SN
Microchip Technology
-
24AA02UIDT-I/OT
Microchip Technology
-
AT24C08C-STUM-T
Microchip Technology
Tech Hub
Latch circuits retain one bit through feedback. This technical reference covers SR and D latches, truth tables, transparency, timing limits, latch-versus-flip-flop behavior, applications and common log…
An engineering guide to LED driver operation, constant-current and constant-voltage outputs, linear and switching topologies, dimming, IC selection, calculations, replacement compatibility, and fault c…
Operational amplifier guide covering op amp basics, feedback, ideal vs real op amps, common configurations, buffer circuits, offset, bias current, gain-bandwidth, slew rate, rail-to-rail limits and sel…
Jumper cables guide covering safe connection order, red and black clamp placement, final ground connection, cable gauge, length, clamp quality, copper vs CCA cables, jump starter comparison and battery…
LDO regulator guide covering low dropout voltage, power dissipation, thermal design, PSRR, output noise, capacitor stability, adjustable LDO circuits, LDO vs buck converter and datasheet selection chec…
Conditional Access Module guide covering CAM meaning, CI/CI+ interface, smart card authorization, DVB security workflow, TV and set-top box compatibility, internal electronics, ESD protection, connecto…
Guide to electronic component obsolescence covering EOL risk, PCN/PDN notices, last-time buy planning, replacement options, form-fit-function validation, counterfeit risk and BOM lifecycle management.
18650 battery guide covering lithium-ion cell basics, 3.6V/3.7V voltage, 4.2V charging, mAh and Wh capacity, protected cells, chargers, BMS, series-parallel packs, holders, welding and sourcing checks.…
Hall effect sensor guide covering working principle, linear and digital sensors, Arduino circuits, current sensing, speed detection, automotive applications, A3144 examples, signal filtering and datash…
Product Change Notification guide for electronic components, covering PCN meaning, PCN vs PDN/EOL, common change types, risk levels, form-fit-function review, engineering validation, BOM control, LTB/L…
