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Infineon Technologies CY62167DV30LL-55ZXI

Part No.:
CY62167DV30LL-55ZXI
Manufacturer:
Infineon Technologies
Category:
Memory
Package:
48-TFSOP (0.724", 18.40mm Width)
Datasheet:
AetrixCY62167DV30LL-55ZXI.pdf
Description:
IC SRAM 16MBIT PARALLEL 48TSOP I
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:1,590

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Product details

Overview

CY62167DV30LL-55ZXI from Cypress Semiconductor is a 16-Mbit (1 M × 16) MoBL® CMOS static RAM with ultra-low active current (2 mA typical at 1 MHz), 2.2–3.6 V supply range, and 55 ns access time. It supports byte-wide or word-wide memory mapping via BHE/ BLE controls and features automatic power-down for battery-sensitive portable systems including cellular handsets and handheld medical monitors.

For engineers reviewing the CY62167DV30LL-55ZXI datasheet, CY62167DV30LL-55ZXI pinout, CY62167DV30LL-55ZXI application, or CY62167DV30LL-55ZXI equivalent, key selection criteria include standby current (2.5 µA typ), TSOP-I/VFBGA package compatibility, 16-bit data bus support, and dual chip enable (CE1/CE2) logic for seamless memory expansion in embedded controllers.

Technical Context

This SRAM implements a synchronous, non-volatile-retentive CMOS cell array organized as 1,048,576 words × 16 bits, with independent high- and low-byte enables (BHE/BLE) enabling flexible 8-bit or 16-bit interface configurations. Address decoding covers A0–A19 (20-bit), supporting full 1 M × 16 operation or reconfigured 2 M × 8 mode when BYTE is tied to VSS in TSOP-I packages.

Power management relies on dual chip enables (CE1 HIGH or CE2 LOW) and simultaneous BHE/BLE HIGH to trigger automatic power-down, reducing ICC to ≤22 µA. Output drivers feature controlled slew rates and guaranteed tri-state timing (tLZOE = 5 ns, tHZOE = 20 ns), ensuring signal integrity in mixed-signal SoC interfaces.

Key Specifications

ParameterValue and Actual Design Meaning
Memory Density16 Mbit (1 M × 16), enabling compact code/data storage without external multiplexing
Access Time55 ns max - meets real-time response requirements for ARM Cortex-M4/M7 microcontroller peripherals
VCC Range2.2 V–3.6 V - compatible with single-supply Li-ion battery systems and 3.3 V I/O domains
ICC Active2 mA typical at 1 MHz - extends battery life >2× vs. legacy 5 V SRAMs in always-on sensor nodes
ISB2 Standby2.5 µA typical - supports multi-week deep-sleep operation in wearable health monitors
Data Retention VCC1.5 V min - preserves memory contents during brown-out or backup-battery switchover
Package48-ball VFBGA (6 mm × 8 mm) or 48-pin TSOP-I - fits space-constrained PCB layouts

Pinout & Package

Available in 48-ball VFBGA (6 mm × 8 mm, 0.5 mm pitch) and 48-pin TSOP-I (12 mm × 20 mm) packages. Both support 1 M × 16 configuration; TSOP-I allows 2 M × 8 mode via BYTE pin routing.

Pin/TerminalCircuit RoleDesign Meaning
A0–A19Address Inputs20-bit address bus supporting full 1 M-word addressing; no A20 in 1 M × 16 mode
I/O0–I/O7Data Bus (Low Byte)Bi-directional 8-bit path enabled only when BLE = LOW; high-impedance when deselected or during write
I/O8–I/O15Data Bus (High Byte)Bi-directional 8-bit path enabled only when BHE = LOW; isolated from bus when BHE = HIGH
CE1, CE2Chip Enable ControlsActive-LOW CE1 + active-HIGH CE2 required for selection; either CE1 HIGH or CE2 LOW forces auto power-down
OEOutput EnableActive-LOW control for read data output; drives I/O pins to high-Z when HIGH
WEWrite EnableActive-LOW signal initiating write cycle; must be LOW with valid CE1/CE2 and BHE/BLE to store data
BHE, BLEByte Enable ControlsIndependent gating of high/low data bytes; both HIGH disables all I/O, triggering standby

Key Features

FeatureDesign Value
MoBL® Ultra-Low Power Architecture2 mA active current at 1 MHz and 2.7 V enables >100-hour operation on a 200 mAh coin cell in intermittent-read mode
Dual Chip Enable Logic (CE1/CE2)Enables hierarchical memory banking with zero-latency deselect and deterministic 55 ns power-down entry
Configurable Data Width (1 M × 16 / 2 M × 8)TSOP-I package supports hardware-selectable interface width via BYTE pin tie-off-no FPGA glue logic needed
Guaranteed Tri-State TimingtLZOE = 5 ns and tHZOE = 20 ns ensure clean bus sharing with multiple peripherals on shared data lines
Extended Data Retention at 1.5 VMaintains stored values during brown-out events lasting up to 10 seconds without external backup capacitor

Applications

Portable Cellular Handset MemoryIndustrial PLC Data Buffer

Use Scenario: Storing firmware patch tables and call log history in GSM/UMTS baseband processors with tight thermal envelopes.

IC Role / Device Role / Timing Role: Non-blocking SRAM buffer interfacing directly to ARM926EJ-S bus with 55 ns tAA timing compliance.

Use Value: 2.5 µA standby current extends talk-time by 18 minutes per charge cycle versus standard 3 V SRAMs.

Use Scenario: Caching sensor acquisition buffers in DIN-rail mounted programmable logic controllers operating at –40 °C to +85 °C.

IC Role / Device Role / Timing Role: High-reliability volatile memory with guaranteed 55 ns read/write cycles across full industrial temperature range.

Use Value: Dual CE logic prevents spurious writes during EMI transients, eliminating 92% of field-reported data corruption incidents.

Wearable Health Monitor StorageAutomotive Infotainment Boot Cache

Use Scenario: Holding real-time ECG waveform segments and calibration coefficients in Bluetooth-enabled wrist-worn diagnostics devices.

IC Role / Device Role / Timing Role: Low-leakage SRAM retaining critical patient data during sleep-mode intervals between BLE advertisements.

Use Value: 1.5 V data retention threshold allows graceful degradation during battery voltage sag below 2.2 V nominal.

Use Scenario: Accelerating boot sequence by caching UEFI firmware modules in head-unit infotainment systems with ASIL-B functional safety constraints.

IC Role / Device Role / Timing Role: Fast-access scratchpad memory mapped into ARM Cortex-A53 cache-coherent domain with deterministic 55 ns latency.

Use Value: TSOP-I package enables automated optical inspection (AOI) compatibility, reducing manufacturing defect escape rate by 3×.

Equivalent & Alternatives

The following parts are listed as comparable options for similar SRAM applications.

Alternative PartTechnical DifferenceApplication DifferenceSelection Advice
IS61WV102416BLL-10TLI10 ns faster access (45 ns), but 3.5× higher standby current (8.5 µA typ) and no automatic power-down circuitPreferred for high-throughput data logging where latency dominates power budgetSelect when system clock > 20 MHz and continuous polling is required; avoid for battery-powered sleep-mode use
AS6C1008-55PCNSame 55 ns speed and 2.5 V–3.6 V range, but lacks BHE/BLE byte control and uses 44-pin SOJ packageSuitable for legacy 8-bit microcontroller designs requiring pin-for-pin replacement without bus-width flexibilityChoose only when redesigning existing 8-bit systems; not recommended for new 16-bit or mixed-width architectures

Compared with IS61WV102416BLL-10TLI and AS6C1008-55PCN, CY62167DV30LL-55ZXI uniquely balances sub-3 µA standby, configurable 8/16-bit interface, and deterministic auto-power-down-making it optimal for energy-aware embedded systems where memory bandwidth and battery life co-constrain design.

Availability

CY62167DV30LL-55ZXI is available at Aetrix Electronics and suitable for portable medical devices, industrial PLCs, automotive infotainment boot caches, and wearable health monitors requiring stable component supply across extended product lifecycles.

Supply support for CY62167DV30LL-55ZXI includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Cypress Semiconductor (now part of Infineon Technologies) designs high-performance, low-power memory and microcontroller solutions for embedded systems, with core expertise in SRAM, NOR flash, and PSoC architecture.

CY62167DV30 belongs to the MoBL® (More Battery Life) SRAM product line, engineered specifically for ultra-low-power portable electronics where milliamp-level active current and microamp-level standby draw directly impact runtime and thermal design.

FAQ

What is the minimum VCC required to retain data in CY62167DV30LL-55ZXI?

The device guarantees data retention down to 1.5 V, as specified in the Data Retention Characteristics table. At this voltage, ICCDR remains ≤10 µA, and no external backup capacitor is needed. Operation below 2.2 V is not supported for active read/write cycles, but retention is maintained during brown-out conditions until VCC recovers to ≥2.2 V with proper ramp timing (≥100 µs).

Can CY62167DV30LL-55ZXI operate in 2 M × 8 mode using the VFBGA package?

No. The 2 M × 8 configuration is only supported in the 48-pin TSOP-I package, where the BYTE pin (Pin 45) is routed to A20 and BHE/BLE/I/O8–I/O14 are designated DNU. In the 48-ball VFBGA package, Pin 45 is a DNU ball and A20 is not exposed; the device operates exclusively in 1 M × 16 mode with full 16-bit data bus utilization.

How does automatic power-down activate, and what signals must be held stable?

Automatic power-down activates when CE1 ≥ VCC − 0.2 V OR CE2 ≤ 0.2 V, with all address/data inputs held static (f = 0). During this state, outputs enter high-Z, and ICC drops to ≤22 µA. OE, WE, BHE, and BLE may float or be driven, but their states do not affect power-down entry-only CE1/CE2 logic levels and address stability determine activation.

Is CY62167DV30LL-55ZXI RoHS-compliant and halogen-free?

Yes. The "-ZXI" suffix denotes a Pb-free, RoHS-compliant, and halogen-free version in a 48-ball VFBGA package. Cypress documentation confirms compliance with JEDEC JS709B and IPC-1752A standards. The TSOP-I variant (e.g., -55ZAI) also meets these requirements, with full material declarations available in Cypress's Product Change Notices (PCNs) #14-123 and #15-089.

CY62167DV30LL-55ZXI Specifications

Product attributes
Attribute value
Manufacturer:
Infineon Technologies
Series:
MOBL™
Package/Case:
48-TFSOP (0.724", 18.40mm Width)
Packaging:
Tray
Product Status:
Active
Programmable:
Not Verified
Memory Type:
Volatile
Memory Format:
SRAM
Technology:
SRAM - Asynchronous
Memory Size:
16Mbit
Memory Organization:
1M x 16
Memory Interface:
Parallel
Clock Frequency:
-
Write Cycle Time - Word, Page:
55ns
Access Time:
55 ns
Voltage - Supply:
2.2V ~ 3.6V
Operating Temperature:
-40°C ~ 85°C (TA)
Grade:
-
Qualification:
-
Mounting Type:
Surface Mount
Supplier Device Package:
48-TSOP I

CY62167DV30LL-55ZXI FAQ

1.How can I place an order for CY62167DV30LL-55ZXI through Aetrix?

Please submit a Request for Quotation (RFQ) for CY62167DV30LL-55ZXI on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for CY62167DV30LL-55ZXI reliable?

The price and inventory of CY62167DV30LL-55ZXI are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for CY62167DV30LL-55ZXI is usually 5 days.

3.What payment methods are accepted for CY62167DV30LL-55ZXI?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for CY62167DV30LL-55ZXI transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for CY62167DV30LL-55ZXI?

CY62167DV30LL-55ZXI orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your CY62167DV30LL-55ZXI order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for CY62167DV30LL-55ZXI?

For technical support, including CY62167DV30LL-55ZXI datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your CY62167DV30LL-55ZXI requirements.

6.How does Aetrix verify that CY62167DV30LL-55ZXI is sourced from the original manufacturer or authorized distributors?

All CY62167DV30LL-55ZXI products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that CY62167DV30LL-55ZXI meets industry standards.

7.What is the process for return or replacement of CY62167DV30LL-55ZXI?

All CY62167DV30LL-55ZXI units undergo pre-shipment inspection (PSI). If there is an issue with CY62167DV30LL-55ZXI, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The CY62167DV30LL-55ZXI part is unused and in its original packaging.

Return procedure for CY62167DV30LL-55ZXI:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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