Infineon Technologies CY62167DV30LL-55ZXIT

Overview

CY62167DV30LL-55ZXIT from Cypress Semiconductor is a 16-Mbit (1 M × 16) CMOS static RAM with MoBL® ultra-low-power architecture, operating across 2.2 V–3.6 V, delivering 2 mA typical active current at 1 MHz and 2.5 µA typical standby current, in a 48-ball VFBGA package - used for battery-sensitive memory buffering in portable telecom and embedded control systems.

For engineers reviewing the CY62167DV30LL-55ZXIT datasheet, CY62167DV30LL-55ZXIT pinout, CY62167DV30LL-55ZXIT application, or CY62167DV30LL-55ZXIT equivalent, key selection criteria include 55 ns read cycle time, automatic power-down on address inactivity, dual chip enable (CE1/CE2) and byte-enable (BHE/BLE) support for flexible memory expansion, and VFBGA thermal resistance of 55 °C/W.

Technical Context

This SRAM implements a 1 M × 16 organization with configurable 2 M × 8 mode via BYTE pin routing, using complementary metal oxide semiconductor (CMOS) process for optimal speed/power trade-off. It supports independent high- and low-byte access via BHE and BLE controls, and features automatic power-down when CE1 is HIGH or CE2 is LOW - reducing ICC by 99% during idle periods.

Read operations require CE1 LOW, CE2 HIGH, OE LOW, and WE HIGH; write operations require CE1 LOW, CE2 HIGH, WE LOW, and either BHE or BLE LOW. Output drivers enter high-impedance state under four conditions: deselection, OE HIGH, both BHE/BLE HIGH, or active write - ensuring clean bus sharing in multi-device systems.

Key Specifications

Pinout & Package

48-ball VFBGA package (6 mm × 8 mm, 0.5 mm pitch), ball map defined per Figure 1 in datasheet 38-05328 Rev. *M. Pin functions validated against official pinout diagram and truth table.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar SRAM applications.

Compared with IS62WV102416BLL-55NLI and R1LV0108ESB-5SI#S0, CY62167DV30LL-55ZXIT uniquely combines VFBGA packaging, automatic power-down, and dual-voltage configurability - making it optimal for space- and battery-constrained portable designs requiring flexible memory mapping.

Availability

CY62167DV30LL-55ZXIT is available at Aetrix Electronics and suitable for cellular baseband subsystems, industrial PLC data logging, and medical wearable sensor aggregation requiring stable component supply across extended product lifecycles.

Supply support for CY62167DV30LL-55ZXIT includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Cypress Semiconductor (now part of Infineon Technologies) designs high-reliability memory and programmable solutions for industrial, automotive, and consumer electronics, with global manufacturing and quality certification to ISO 9001 and AEC-Q100.

This device belongs to the MoBL® (More Battery Life) SRAM product line, engineered specifically for ultra-low-power, high-speed memory buffering in portable and energy-harvested systems where runtime and thermal density are critical constraints.

FAQ

What is the minimum VCC required to retain data in CY62167DV30LL-55ZXIT?

The device guarantees data retention down to 1.5 V (VDR), as specified in the Data Retention Characteristics table. At this voltage, ICCDR remains ≤10 µA, enabling operation during brownout or capacitor-backed hold conditions. This threshold is independent of temperature and applies across the full industrial range (–40 °C to +85 °C).

Can CY62167DV30LL-55ZXIT operate in 2 M × 8 mode using the VFBGA package?

Yes - the 48-ball VFBGA supports both configurations. In 2 M × 8 mode, the BYTE pin must be tied to VSS, A20 becomes functional (mapped to I/O15 ball), and BHE, BLE, and I/O8–I/O14 are designated DNU (do not use). Pin function reassignment is fully documented in Figure 1 and Note 4 of datasheet 38-05328 Rev. *M.

How does automatic power-down activate, and what triggers exit?

Automatic power-down activates when CE1 is HIGH or CE2 is LOW - causing internal circuitry to reduce ICC to ISB1/ISB2 levels (≤22 µA). Exit occurs within tPD (max 70 ns) after CE1 goes LOW and CE2 goes HIGH. No external signal or command is needed; activation is purely hardware-driven by chip enable states.

Is the 48-ball VFBGA footprint compatible with standard reflow profiles?

Yes - the package complies with IPC/JEDEC J-STD-020D moisture sensitivity level 3 and supports standard Pb-free reflow profiles (peak 260 °C, 60-second duration above 217 °C). Thermal resistance values (θJA = 55 °C/W, θJC = 16 °C/W) are measured on a 2-layer 3″ × 4.5″ test board per JEDEC standards.