Infineon Technologies CY62167DV30LL-70BVI

Overview

CY62167DV30LL-70BVI from Cypress Semiconductor is a 16-Mbit (1 M × 16) CMOS static RAM with MoBL® ultra-low-power architecture, operating across 2.2 V–3.6 V, delivering 2 mA typical active current at 1 MHz and 2.5 µA typical standby current. It supports dual organization (1 M × 16 or 2 M × 8), automatic power-down on address inactivity, and byte-level write control via BHE/BLE. It is used in battery-powered portable electronics requiring non-volatile data retention during sleep modes.

For engineers reviewing the CY62167DV30LL-70BVI datasheet, CY62167DV30LL-70BVI pinout, CY62167DV30LL-70BVI application, or CY62167DV30LL-70BVI equivalent, key selection criteria include voltage range compatibility, TSOP-I/VFBGA package fit, 70 ns access timing, byte-select SRAM interface logic, and sub-3 µA ISB2 standby current for energy-constrained designs.

Technical Context

This SRAM implements a 1 M × 16-bit array with independent high- and low-byte enables (BHE/BLE), enabling flexible 8-bit or 16-bit bus interfacing without external logic. Its automatic power-down circuit reduces ICC by >99% when CE1/CE2 or BHE/BLE are inactive, verified at 2.5 µA ISB2 under full CMOS input conditions at 3.6 V.

Read and write operations are controlled by overlapping CE1/CE2, OE, WE, and byte-enable signals - with tACE = 70 ns, tDOE = 35 ns, and tWC = 70 ns - ensuring deterministic timing for microcontroller and ASIC memory interfaces in industrial and portable systems.

Key Specifications

Pinout & Package

Available in 48-ball VFBGA (7 mm × 9 mm, 0.8 mm pitch) and 48-pin TSOP-I (12 mm × 20 mm) packages. Both support identical signal mapping and byte-select functionality.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar SRAM applications.

Compared with IS62WV102416BLL-70NLI and R1LV0108ESB-70PQ, CY62167DV30LL-70BVI uniquely delivers sub-3 µA standby current at 2.2 V while integrating autonomous power-down - reducing BOM count and firmware overhead in energy-critical portable systems.

Availability

CY62167DV30LL-70BVI is available at Aetrix Electronics and suitable for portable medical monitors, industrial PLC data buffers, and wireless sensor nodes requiring stable component supply, long-lifecycle availability, and Pb-free compliance.

Supply support for CY62167DV30LL-70BVI includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Cypress Semiconductor (now part of Infineon Technologies) designs high-performance, low-power memory and programmable solutions for embedded systems, with global R&D and manufacturing infrastructure.

The CY62167DV30 belongs to the MoBL® (More Battery Life) SRAM product line, engineered specifically for portable and energy-harvesting applications where microamp-level standby current and flexible voltage operation are mandatory.

FAQ

What is the minimum V_CC required to retain data in CY62167DV30LL-70BVI?

Data retention is guaranteed down to 1.5 V V_CC, as specified in the Data Retention Characteristics table. At this voltage, the device maintains stored data indefinitely while drawing ≤10 µA ICCDR, enabling use with supercapacitors or backup batteries that decay below nominal operating range.

Can CY62167DV30LL-70BVI operate in 2 M × 8 mode using the TSOP-I package?

Yes - the 48-pin TSOP-I package supports 2 M × 8 configuration by tying the BYTE pin to VSS. In this mode, A20 appears on I/O15 pin, and BHE, BLE, and I/O8–I/O14 become no-connect (DNU); the device behaves as two independent 1 M × 8 banks addressed by A0–A19 and A20.

How does automatic power-down activate without software control?

Automatic power-down triggers when CE1 is HIGH or CE2 is LOW, or when both BHE and BLE are HIGH - causing internal circuitry to disable core arrays and reduce ICC to ISB2 levels. No clock, command, or register write is needed; it responds purely to pin-level logic states.

Is the VFBGA package of CY62167DV30LL-70BVI compatible with standard reflow profiles?

Yes - the 48-ball VFBGA variant complies with IPC/JEDEC J-STD-020 Level 3 moisture sensitivity and supports standard lead-free reflow profiles (peak 260 °C, 60–90 sec above 217 °C). Bake time is not required if sealed packaging remains unopened and ambient exposure is <168 hours.