Infineon Technologies CY62167DV30LL-70BVIT

Overview

CY62167DV30LL-70BVIT from Cypress Semiconductor is a 16-Mbit (1 M × 16) CMOS static RAM with MoBL® ultra-low-power architecture, operating across 2.2 V–3.6 V supply, delivering 2 mA typical active current at 1 MHz and 2.5 µA typical standby current. It supports dual organization (1 M × 16 or 2 M × 8), automatic power-down on address inactivity, and byte-level write control via BHE/BLE. Used in battery-powered portable electronics requiring non-volatile data retention during sleep modes.

For engineers reviewing the CY62167DV30LL-70BVIT datasheet, CY62167DV30LL-70BVIT pinout, CY62167DV30LL-70BVIT application, or CY62167DV30LL-70BVIT equivalent, key selection criteria include its 70 ns access time, VFBGA/TSOP-I package compatibility, 1.5 V minimum data retention voltage, dual-byte enable logic, and industrial temperature range (–40 °C to +85 °C).

Technical Context

This SRAM implements a fully static, asynchronous interface with independent byte enables (BHE/BLE) enabling selective 8-bit writes within the 16-bit data bus. Its automatic power-down circuit reduces ICC by >99% when CE1 is HIGH or CE2 is LOW and address lines are static.

The device supports two memory configurations: standard 1 M × 16 mode (BYTE tied to VCC in TSOP-I) or 2 M × 8 mode (BYTE tied to VSS, A20 enabled, I/O8–I/O15 unused). Output drivers meet CMOS voltage thresholds (VIH = 2.2 V min at VCC ≥ 2.7 V; VOL = 0.4 V max at IOL = 0.1 mA).

Key Specifications

Pinout & Package

Available in 48-ball VFBGA (6 mm × 8 mm) and 48-pin TSOP-I packages. Both support identical signal mapping except BYTE pin function in TSOP-I (VCC for 1M×16, VSS for 2M×8). DNU pins must remain unconnected; NC pins are not bonded.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar SRAM applications.

Compared with IS61WV102416BLL-70TLI and AS6C1008-70SCN, the CY62167DV30LL-70BVIT uniquely supports 2.2 V operation and sub-µA standby, enabling single-supply battery longevity and flexible memory mapping-critical for portable and energy-harvesting applications.

Availability

CY62167DV30LL-70BVIT is available at Aetrix Electronics and suitable for portable medical monitors, industrial PLC data buffers, and smart meter firmware caches requiring stable component supply across extended product lifecycles.

Supply support for CY62167DV30LL-70BVIT includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Cypress Semiconductor (now part of Infineon Technologies) designs high-performance memory and programmable solutions for embedded systems, emphasizing low-power innovation and automotive-grade reliability.

The CY62167DV30 belongs to the MoBL® (More Battery Life) SRAM product line, engineered specifically for portable and battery-constrained applications requiring nanosecond access with microamp-level standby consumption.

FAQ

What is the minimum VCC required to retain data in CY62167DV30LL-70BVIT?

The device guarantees data retention down to 1.5 V, as specified in the Data Retention Characteristics table. At this voltage, ICCDR remains ≤10 µA, enabling long-term storage using backup capacitors or low-voltage batteries without refresh circuitry.

Can CY62167DV30LL-70BVIT operate in 2 M × 8 mode using the VFBGA package?

No. The 2 M × 8 configuration requires A20 addressing and BYTE pin control, which is only implemented in the 48-pin TSOP-I package. The VFBGA variant supports only 1 M × 16 organization due to missing BYTE pin and A20 routing.

How does automatic power-down activate, and what triggers exit?

Automatic power-down activates when CE1 is HIGH or CE2 is LOW *and* address lines remain static for >100 ns. Exit occurs on first address transition after CE activation (CE1 LOW + CE2 HIGH), with tPD = 70 ns maximum delay before full operation resumes.

Are BHE and BLE inputs TTL- or CMOS-compatible?

BHE and BLE are CMOS-compatible inputs with VIH = 2.2 V (min) at VCC ≥ 2.7 V and VIL = 0.8 V (max). They do not meet TTL voltage thresholds and require proper level translation when driven from 5 V or legacy TTL logic.