Infineon Technologies CY62167ESL-55FNXIT
- Part No.:
- CY62167ESL-55FNXIT
- Manufacturer:
- Infineon Technologies
- Category:
- Memory
- Package:
- 60-UFBGA, WLCSP
- Datasheet:
-
CY62167ESL-55FNXIT.pdf
- Description:
- IC SRAM 16MBIT PARALLEL 60WLCSP
- Quantity:
- Payment:

- Shipping:

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Product details
Overview
CY62167ESL-55FNXIT from Cypress Semiconductor is a 16-Mbit (1 M × 16 / 2 M × 8) MoBL® CMOS Static RAM with 55 ns access time, 1.65–1.95 V / 2.2–3.6 V / 4.5–5.5 V wide supply voltage support, –40 °C to +85 °C industrial temperature range, and ultra-low standby current (1.5 µA typical at 25 °C). It serves as main or buffer memory in portable embedded systems requiring battery longevity and fast random-access data retention.
For engineers reviewing the CY62167ESL-55FNXIT datasheet, CY62167ESL-55FNXIT pinout, CY62167ESL-55FNXIT application, or CY62167ESL-55FNXIT equivalent, key selection criteria include dual-voltage operation compatibility, byte-selectable 16-bit I/O architecture, automatic CE-driven power-down, WLCSP package thermal resistance (θJA = 26.54 °C/W), and guaranteed 55 ns read/write timing across full industrial temperature range.
Technical Context
The CY62167ESL-55FNXIT implements a 1M × 16 SRAM array with independent Byte High Enable (BHE) and Byte Low Enable (BLE) for selective 8-bit writes, supporting both 16-bit and 2M × 8 configurations. Its automatic power-down circuit reduces ICC by 99% when CE1 is HIGH or CE2 is LOW or both BHE/ BLE are HIGH.
It features CMOS-compatible input thresholds (VIH = 1.4 V min at 1.65–1.95 V VCC), tri-state output control via OE/CE/BHE/ BLE, and data retention down to 1.0 V VCC with ICCDR ≤ 10.0 µA. All AC timing parameters-including tRC = 55 ns, tDOE = 25 ns, and tPD = 55 ns-are specified over –40 °C to +85 °C and full VCC ranges.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Memory Size | 16 Mbit (1 M × 16 or 2 M × 8); enables flexible data bus width selection in space-constrained designs |
| Access Time | 55 ns max; guarantees deterministic read latency for real-time firmware execution and buffering |
| Supply Voltage | 1.65–1.95 V / 2.2–3.6 V / 4.5–5.5 V; supports multi-rail systems without level shifters |
| Standby Current | 1.5 µA typical at 25 °C; extends battery life in always-on IoT edge nodes |
| Operating Temp | –40 °C to +85 °C; qualified for industrial-grade reliability in uncontrolled environments |
| Package | 60-pin WLCSP (Wafer-Level Chip Scale Package); 3.2 mm × 4.2 mm footprint for ultra-compact PCB layouts |
| Data Retention VCC | 1.0 V minimum; maintains stored configuration during brown-out or sleep-mode transitions |
Pinout & Package
60-pin Wafer-Level Chip Scale Package (WLCSP) with 0.4 mm ball pitch, ball-up view, and NC (no-connect) balls on corners. Thermal resistance θJA = 26.54 °C/W (4-layer PCB), θJC = 0.11 °C/W.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| A0–A19 | Address Inputs | 20-bit address bus supporting full 1 M-word addressing; A0 least significant |
| I/O0–I/O15 | Bidirectional Data Bus | 16-bit parallel interface; I/O0–I/O7 controlled by BLE, I/O8–I/O15 by BHE |
| CE1, CE2 | Chip Enable Inputs | Active-Low CE1 and Active-High CE2 enable hierarchical memory banking and power gating |
| OE | Output Enable | Controls read-data output drive; HIGH places I/O pins in high-impedance state |
| WE | Write Enable | Active-Low signal initiating write cycle; timing-critical for tPWE ≥ 40 ns |
| BHE, BLE | Byte Enable Controls | Independent 8-bit write masking: BLE enables I/O0–I/O7, BHE enables I/O8–I/O15 |
| VCC, VSS | Power & Ground | Multiple VCC/VSS balls distributed for low-impedance supply routing and EMI reduction |
| NC | No Connect | Corner balls not bonded to die; must be left floating or grounded per layout guidelines |
Key Features
| Feature | Design Value |
|---|---|
| MoBL® Ultra-Low Power Architecture | 2.2 mA typical active current at 1 MHz and 1.8 V; enables >10-year coin-cell operation in sensor nodes |
| Dual-Voltage Operation | Three disjoint VCC ranges (1.65–1.95 V, 2.2–3.6 V, 4.5–5.5 V) eliminate external regulators in mixed-supply systems |
| Automatic Power-Down | Reduces ICC to ≤12 µA (ISB1) or ≤4 µA (ISB2 at 25 °C) when deselected-no software intervention required |
| Byte-Selectable Write | Independent BHE/ BLE control allows partial-word updates without read-modify-write cycles, reducing bus traffic |
| Robust Data Retention | Maintains valid data at VCC ≥ 1.0 V and TA ≤ 85 °C, supporting graceful shutdown during power loss |
Applications
| Portable Medical Monitor | Industrial PLC I/O Buffer |
|---|---|
|
Use Scenario: Real-time acquisition and local caching of ECG waveforms in handheld diagnostic devices powered by single Li-ion cells. IC Role / Device Role / Timing Role: Primary SRAM buffer between ADC and ARM Cortex-M4 processor; handles burst reads at 55 ns latency. Use Value: 1.5 µA standby current extends battery runtime beyond 72 hours; 1.65–1.95 V operation eliminates LDO overhead. |
Use Scenario: Storing transient I/O status and control logic state in DIN-rail mounted programmable logic controllers. IC Role / Device Role / Timing Role: Nonvolatile shadow RAM holding last-known I/O states during brown-out events; accessed via 16-bit parallel bus. Use Value: Data retention down to 1.0 V ensures state integrity during 100 ms power dips; –40 °C to +85 °C rating matches enclosure specs. |
| Wireless Sensor Node | Automotive Infotainment Display Cache |
|
Use Scenario: Aggregating and compressing environmental sensor data before BLE transmission in battery-powered mesh endpoints. IC Role / Device Role / Timing Role: Scratchpad memory for firmware-managed FIFO; byte-enable writes minimize energy per update. Use Value: 2.2 mA active current at 1 MHz enables sub-10 µJ per 16-byte write; WLCSP package fits 8 mm² board area budget. |
Use Scenario: Frame buffer for 7-inch TFT display in automotive head units where EMI and thermal density are critical. IC Role / Device Role / Timing Role: High-speed pixel data cache interfaced to display controller; operates at 4.5–5.5 V rail. Use Value: 55 ns tRC meets 60 Hz refresh timing; θJA = 26.54 °C/W prevents thermal throttling under continuous 24/7 operation. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar high-density low-power SRAM applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| ISSI IS62WV102416BLL-55NLI | 55 ns access, 1.65–2.2 V only; no 4.5–5.5 V support; higher ISB2 (5 µA typ) | Limited to single-supply 1.8 V systems; unsuitable for 5 V legacy display interfaces | Select when operating exclusively at 1.8 V and cost sensitivity outweighs voltage flexibility |
| Renesas R1LV1616RSA-55PB | 55 ns, 2.2–3.6 V only; 10 µA ISB2 at 25 °C; no 1.65–1.95 V or 4.5–5.5 V support | Requires external level translation for 5 V microcontrollers; lacks MoBL® deep-sleep optimization | Prefer for 3.3 V-only industrial control where Renesas ecosystem integration is prioritized |
Compared with IS62WV102416BLL-55NLI and R1LV1616RSA-55PB, CY62167ESL-55FNXIT uniquely supports three disjoint voltage rails, achieves lowest ISB2 (1.5 µA), and delivers guaranteed 55 ns timing across full industrial temperature range-making it optimal for multi-voltage portable and automotive-qualified designs.
Availability
CY62167ESL-55FNXIT is available at Aetrix Electronics and suitable for portable medical monitors, industrial PLC I/O buffers, wireless sensor nodes, and automotive infotainment display caches requiring stable component supply across extended temperature and voltage ranges.
Supply support for CY62167ESL-55FNXIT includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Cypress Semiconductor (now part of Infineon Technologies) designs high-reliability memory and microcontroller solutions for industrial, automotive, and consumer applications.
The CY62167ESL belongs to the MoBL® (More Battery Life) SRAM product line, engineered specifically for ultra-low-power portable electronics where extended battery life and small form factor are primary design constraints.
FAQ
What voltage ranges does CY62167ESL-55FNXIT support, and how do they affect system design?
CY62167ESL-55FNXIT supports three non-overlapping VCC ranges: 1.65–1.95 V, 2.2–3.6 V, and 4.5–5.5 V. This eliminates need for external level shifters when interfacing with mixed-supply SoCs or legacy 5 V peripherals. Each range has distinct VIH/VIL thresholds and timing specifications validated across –40 °C to +85 °C.
How does the automatic power-down feature reduce system power consumption?
When CE1 is HIGH or CE2 is LOW or both BHE and BLE are HIGH, the device enters automatic power-down mode, reducing ICC to ≤12 µA (ISB1) or ≤4 µA (ISB2 at 25 °C)-a 99% reduction versus active current. No software command or external control signal is needed; the behavior is fully hardware-driven and immediate.
Can CY62167ESL-55FNXIT operate in 2 M × 8 configuration, and what pins change function?
Yes-the same 1 M × 16 array is configurable as 2 M × 8 by using A0 as the LSB for byte selection. In this mode, I/O0–I/O7 carry lower-byte data and I/O8–I/O15 carry upper-byte data; BHE/ BLE remain functional for byte masking. Address lines A0–A19 retain identical roles, with no pin reassignment required.
What is the significance of the 60-pin WLCSP package's thermal resistance values?
With θJA = 26.54 °C/W (4-layer PCB) and θJC = 0.11 °C/W, the WLCSP enables efficient heat transfer directly from die to PCB copper. This allows sustained 55 ns operation at +85 °C ambient without derating, critical for sealed enclosures in automotive or industrial settings where airflow is restricted.
CY62167ESL-55FNXIT Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Infineon Technologies
- Series:
- MOBL™
- Package/Case:
- 60-UFBGA, WLCSP
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Obsolete
- Programmable:
- Not Verified
- Memory Type:
- Volatile
- Memory Format:
- SRAM
- Technology:
- SRAM - Asynchronous
- Memory Size:
- 16Mbit
- Memory Organization:
- 2M x 8, 1M x 16
- Memory Interface:
- Parallel
- Clock Frequency:
- -
- Write Cycle Time - Word, Page:
- 55ns
- Access Time:
- 55 ns
- Voltage - Supply:
- 1.65V ~ 1.95V
- Operating Temperature:
- -40°C ~ 85°C (TA)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 60-WLCSP (5.81x4.65)
CY62167ESL-55FNXIT FAQ
1.How can I place an order for CY62167ESL-55FNXIT through Aetrix?
Please submit a Request for Quotation (RFQ) for CY62167ESL-55FNXIT on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for CY62167ESL-55FNXIT reliable?
The price and inventory of CY62167ESL-55FNXIT are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for CY62167ESL-55FNXIT is usually 5 days.
3.What payment methods are accepted for CY62167ESL-55FNXIT?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for CY62167ESL-55FNXIT transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for CY62167ESL-55FNXIT?
CY62167ESL-55FNXIT orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your CY62167ESL-55FNXIT order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for CY62167ESL-55FNXIT?
For technical support, including CY62167ESL-55FNXIT datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your CY62167ESL-55FNXIT requirements.
6.How does Aetrix verify that CY62167ESL-55FNXIT is sourced from the original manufacturer or authorized distributors?
All CY62167ESL-55FNXIT products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that CY62167ESL-55FNXIT meets industry standards.
7.What is the process for return or replacement of CY62167ESL-55FNXIT?
All CY62167ESL-55FNXIT units undergo pre-shipment inspection (PSI). If there is an issue with CY62167ESL-55FNXIT, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The CY62167ESL-55FNXIT part is unused and in its original packaging.
Return procedure for CY62167ESL-55FNXIT:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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