Infineon Technologies CY62167EV18LL-55BVIT

Overview

CY62167EV18LL-55BVIT from Cypress Semiconductor is a 16-Mbit (1 M × 16) CMOS static RAM with 55 ns access time, operating across 1.65 V–2.25 V supply, ultra-low standby current (1.5 µA typ), and automatic power-down mode. It serves as high-speed, low-power data storage in portable embedded systems requiring byte-level write control via BHE/ BLE and dual chip enables (CE1/CE2).

For engineers reviewing the CY62167EV18LL-55BVIT datasheet, CY62167EV18LL-55BVIT pinout, CY62167EV18LL-55BVIT application, or CY62167EV18LL-55BVIT equivalent, key selection criteria include industrial temperature range (–40 °C to +85 °C), 48-ball VFBGA package compatibility, MoBL® battery-life optimization, and dual-byte enable timing behavior under CE-controlled read/write cycles.

Technical Context

The CY62167EV18LL-55BVIT implements a fully static 1 M × 16 memory array with independent byte-wide write capability via BHE and BLE inputs, enabling selective update of upper or lower 8-bit lanes without full-word access. Its automatic power-down logic triggers when CE1 is HIGH, CE2 is LOW, or both BHE and BLE are HIGH - reducing ICC to ≤12 µA.

Timing is defined by strict AC parameters including tRC = 55 ns, tDOE = 25 ns, and tHZOE = 18 ns, all measured at VCC = 1.8 V, TA = 25 °C, with 1 V/ns edge rates and 30 pF load. The device supports three distinct read modes (address-, OE-, and WE-controlled) and two write modes, validated per truth table on page 11 of Rev. *O datasheet.

Key Specifications

Pinout & Package

Package: 48-ball Very Fine Ball Grid Array (VFBGA), 6 mm × 8 mm, 0.5 mm pitch, RoHS-compliant, moisture sensitivity level 3.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar static RAM applications.

Compared with IS62WV102416BLL-55NLI and NVMFS16M16LL-55V, the CY62167EV18LL-55BVIT uniquely balances ultra-low 1.8 V operation, sub-2 µA standby, and compact 48-ball VFBGA - making it optimal for space-constrained, battery-sensitive designs where non-volatility is unnecessary.

Availability

CY62167EV18LL-55BVIT is available at Aetrix Electronics and suitable for wireless sensor nodes, industrial PLC data buffers, medical wearable ECG buffers, and automotive infotainment boot caches requiring stable component supply, long-lifecycle support, and industrial-temperature qualification.

Supply support for CY62167EV18LL-55BVIT includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Cypress Semiconductor (now part of Infineon Technologies) designs high-performance, low-power memory and microcontroller solutions for embedded systems, with global R&D and manufacturing infrastructure.

The CY62167EV18 series belongs to Cypress's MoBL® (More Battery Life) SRAM product line, engineered specifically for portable and energy-constrained applications demanding nanosecond-speed access with microamp-level standby draw.

FAQ

What is the minimum VCC required for data retention on CY62167EV18LL-55BVIT?

The device guarantees data retention down to VCC = 1.0 V, as specified in the Data Retention Characteristics table (page 6). At this voltage, ICCDR remains ≤10 µA, and the memory retains stored bits indefinitely as long as CE1, CE2, BHE, and BLE remain in deselected states - enabling use in brown-out or backup-battery scenarios.

Can CY62167EV18LL-55BVIT operate with only CE1 asserted, leaving CE2 unconnected?

No. CE2 must be actively driven to VIH (≥1.4 V) for normal operation. Leaving CE2 floating violates the Absolute Maximum Ratings and may cause undefined behavior or increased ISB. The truth table (page 11) confirms that valid read/write requires CE1 = VIL and CE2 = VIH simultaneously - CE2 is not optional or internally pulled.

Does the 55 ns access time apply to both read and write cycles?

Yes - tRC = 55 ns is the maximum read cycle time, and tWC = 55 ns is the maximum write cycle time. However, individual timing parameters differ: tDOE (OE-to-data-valid) is 25 ns, while tSCE (CE-to-write-end) is 40 ns. Both read and write meet 55 ns overall cycle constraint under worst-case VCC and temperature conditions.

Are the NC (No Connect) balls on the 48-ball VFBGA electrically isolated or usable as thermal pads?

The NC balls (e.g., H6) are not bonded to the die and have no internal connection - they are electrically isolated. Per package diagram (page 13), they serve solely as mechanical alignment aids or future upgrade points. They must not be soldered to ground or used as thermal vias, as doing so risks shorting adjacent signal balls or compromising thermal resistance (θJA = 55 °C/W).