Infineon Technologies CY62167EV18LL-55BVXI

Overview

CY62167EV18LL-55BVXI from Cypress Semiconductor is a 16-Mbit (1 M × 16) CMOS static RAM with 55 ns access time, operating across 1.65 V–2.25 V supply, featuring ultra-low standby current (1.5 µA typ), automatic power-down mode, and byte-level write control via BHE/ BLE. It serves as main data buffer in portable telecom systems requiring extended battery life.

For engineers reviewing the CY62167EV18LL-55BVXI datasheet, CY62167EV18LL-55BVXI pinout, CY62167EV18LL-55BVXI application, or CY62167EV18LL-55BVXI equivalent, key selection criteria include VFBGA-48 package compatibility, dual chip enable (CE1/CE2) timing margins, 1.5 µA ISB2 standby current validation, and byte-selectable I/O0–I/O15 interface behavior under low-voltage operation.

Technical Context

The device implements a full CMOS 1M × 16 SRAM array with independent high- and low-byte enables (BHE/BLE), dual chip enables (CE1 active-low, CE2 active-high), and automatic power-down triggered by address inactivity or deselection. Its logic supports three read modes (address-, OE-, and CE-controlled) and two write modes (WE- or CE-controlled), all compliant with 1 V/ns edge rates and VCC/2 timing reference levels.

Power management relies on hardware-driven state transitions: standby enters when CE1 is HIGH or CE2 is LOW or both BHE and BLE are HIGH; outputs enter high-Z during deselection, OE HIGH, write cycles, or simultaneous BHE/BLE deassertion. Data retention remains valid down to 1.0 V with ICCDR ≤ 10 µA.

Key Specifications

Pinout & Package

Package: 48-ball Very Fine Ball Grid Array (VFBGA), 6 mm × 8 mm footprint, 0.5 mm ball pitch, RoHS-compliant Pb-free finish.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar SRAM applications.

Compared with IS62WV102416BLL-55TLI and AS6C1008-55TIN, CY62167EV18LL-55BVXI delivers superior energy efficiency below 2.25 V, eliminates external power control circuitry via integrated auto-power-down, and enables miniaturization through its 48-ball VFBGA-critical for next-gen portable electronics.

Availability

CY62167EV18LL-55BVXI is available at Aetrix Electronics and suitable for cellular baseband subsystems, portable medical monitors, industrial handheld terminals, and wireless sensor node cache applications requiring stable component supply and long-term lifecycle support.

Supply support for CY62167EV18LL-55BVXI includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Cypress Semiconductor (now part of Infineon Technologies) designs high-performance, low-power memory and programmable solutions for embedded systems, with global R&D centers and manufacturing partnerships.

This device belongs to the MoBL® (More Battery Life) SRAM product line, engineered specifically for ultra-low-voltage, ultra-low-power portable electronics where extended battery runtime and minimal PCB area are primary design constraints.

FAQ

What is the minimum VCC required to retain data in CY62167EV18LL-55BVXI?

Data retention is guaranteed down to 1.0 V VCC, with maximum data retention current (ICCDR) of 10 µA under those conditions. The device maintains stored data without refresh as long as VCC remains ≥1.0 V and chip enable signals remain in standby configuration (CE1 HIGH or CE2 LOW or both BHE/BLE HIGH). This enables safe operation during brown-out recovery sequences.

Can CY62167EV18LL-55BVXI operate reliably at 1.65 V with 55 ns timing?

Yes-the 55 ns access time is fully specified and tested across the entire 1.65 V–2.25 V VCC range per the datasheet's Operating Range table. All AC parameters-including tRC, tAA, and tDOE-are guaranteed at 1.65 V, making it suitable for direct interfacing with 1.8 V domain MCUs without level shifting.

How does automatic power-down activate, and what triggers exit?

Automatic power-down activates when addresses stop toggling while the device is deselected (CE1 HIGH or CE2 LOW) or when both BHE and BLE are HIGH. Exit occurs on first valid address transition after CE1/CE2 re-enable or BHE/BLE assertion, with tPU = 0 ns-no additional delay beyond standard read cycle timing.

Are NC pins on the VFBGA package electrically isolated or usable for routing?

NC (No Connect) pins-specifically balls H6 and A16 per the pinout diagram-are not bonded to the die and have no internal connection. They may be used as routing channels or thermal vias but must not be tied to any active signal or power net. Ball H6 is reserved for potential density upgrade paths and must remain unconnected in this 16-Mbit configuration.