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Infineon Technologies CY62167EV18LL-55BVXIT
- Part No.:
- CY62167EV18LL-55BVXIT
- Manufacturer:
- Infineon Technologies
- Category:
- Memory
- Package:
- 48-VFBGA
- Datasheet:
-
CY62167EV18LL-55BVXIT.pdf
- Description:
- IC SRAM 16MBIT PARALLEL 48VFBGA
- Quantity:
- Payment:
- Shipping:
Inventory:1,283
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Product details
Overview
CY62167EV18LL-55BVXIT from Cypress Semiconductor is a 16-Mbit (1 M × 16) CMOS static RAM with 55 ns access time, operating across 1.65 V–2.25 V supply, featuring ultra-low standby current (1.5 µA typ), automatic power-down mode, and dual chip enable (CE1/CE2) for memory expansion in portable systems.
For engineers reviewing the CY62167EV18LL-55BVXIT datasheet, CY62167EV18LL-55BVXIT pinout, CY62167EV18LL-55BVXIT application, or CY62167EV18LL-55BVXIT equivalent, this MoBL® SRAM supports battery-sensitive designs requiring fast random-access storage with byte-level control via BHE/ BLE and high-impedance I/O management during deselect or write cycles.
Technical Context
This SRAM implements a 1 M × 16-bit organization with independent byte enables (BHE/BLE) enabling selective 8-bit writes to upper or lower data bytes without disturbing adjacent bytes. Its dual chip enable architecture (CE1 active-low, CE2 active-high) allows hierarchical memory mapping and seamless bank expansion.
The device uses CMOS circuitry optimized for low-power operation: automatic power-down reduces current by 99% when addresses are static, and tri-state output control is governed by combined logic of CE1, CE2, OE, BHE, BLE, and WE - all validated under industrial temperature range (–40 °C to +85 °C) and VFBGA packaging.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Memory Density | 16 Mbit (1 M × 16 bits) - provides full-word parallel access for microcontroller or FPGA data buffers |
| Access Time | 55 ns - ensures compatibility with 18 MHz bus timing in embedded controllers |
| Supply Voltage | 1.65 V to 2.25 V - supports single-supply operation in modern low-voltage SoC interfaces |
| Standby Current | 1.5 µA typical - extends battery life in always-on portable devices like wearables |
| Active Current | 2.2 mA at 1 MHz - enables efficient burst-mode operation without thermal throttling |
| Data Retention Voltage | 1.0 V minimum - maintains stored data during brown-out or sleep-mode voltage scaling |
| Package | 48-ball VFBGA (6 mm × 8 mm, 0.5 mm pitch) - enables high-density PCB layout in space-constrained modules |
Pinout & Package
Package: 48-ball Very Fine Ball Grid Array (VFBGA), 6 mm × 8 mm body, 0.5 mm ball pitch, JEDEC MO-276AA compliant. Balls marked NC are not connected on die; H6 supports optional density upgrade path.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| WE | Write Enable | Active-low control initiating write cycle; must be LOW with valid CE1/CE2 and BHE/BLE to store data |
| OE | Output Enable | Active-low signal enabling read data onto I/O0–I/O15; HIGH places outputs in high-Z state |
| CE1 / CE2 | Chip Enable Pair | CE1 active-low + CE2 active-high required simultaneously for device selection; enables multi-bank decoding |
| BHE / BLE | Byte High/Low Enable | Independent 8-bit write control: BLE LOW writes I/O0–I/O7; BHE LOW writes I/O8–I/O15 |
| I/O0–I/O15 | Bi-directional Data Bus | 16-bit multiplexed data interface; tri-stated automatically during deselect, write, or OE HIGH |
| A0–A19 | Address Inputs | 20-bit address bus selecting one of 1 M locations; no internal latching - requires stable address before CE/OE assertion |
| VCC / VSS | Power / Ground | Dual VCC (1.65–2.25 V) and VSS pins distributed across package for low-noise supply routing |
Key Features
| Feature | Design Value |
|---|---|
| MoBL® Ultra-Low Power Architecture | Reduces standby current to 1.5 µA typical - critical for >1-year battery life in IoT edge nodes |
| Automatic Power-Down Mode | Triggers 99% current reduction when address lines stabilize - eliminates need for external power-gating logic |
| Dual Chip Enable Interface | CE1 (active-low) and CE2 (active-high) allow cascaded memory banks without glue logic |
| Independent Byte Write Control | BHE/BLE enable partial-word writes - avoids read-modify-write overhead in firmware data structures |
| VFBGA Thermal Performance | θJA = 55 °C/W - supports sustained operation at 85 °C ambient without derating in sealed enclosures |
Applications
| Portable Medical Sensors | Industrial PLC Data Buffers |
|---|---|
|
Use Scenario: Continuous ECG waveform acquisition with local preprocessing and intermittent wireless upload. IC Role / Device Role / Timing Role: High-speed, low-power SRAM storing 10+ seconds of raw sensor samples prior to compression and transmission. Use Value: 55 ns access enables real-time buffering at 10 kSPS; 1.5 µA standby preserves coin-cell battery for >2 years in sleep mode. |
Use Scenario: Deterministic I/O scan cycle in modular automation controllers with fieldbus co-processors. IC Role / Device Role / Timing Role: Shared memory between ARM host and FPGA-based motion sequencer for synchronized register exchange. Use Value: Dual CE interface isolates CPU and FPGA address spaces; byte enables prevent corruption during partial register updates. |
| Wearable Fitness Trackers | Automotive Infotainment UI Caches |
|
Use Scenario: Step counting, heart rate, and GPS logging with intermittent display refresh and Bluetooth sync. IC Role / Device Role / Timing Role: Low-voltage SRAM backing up volatile context during MCU deep-sleep states. Use Value: 1.0 V data retention allows operation down to brown-out thresholds; VFBGA footprint fits <10 mm² wearable PCBs. |
Use Scenario: Touchscreen gesture buffer and menu asset preloading in head-unit systems with limited DRAM bandwidth. IC Role / Device Role / Timing Role: Fast-access cache for UI bitmap tiles and button state history during GPU rendering pauses. Use Value: 55 ns latency ensures zero-frame stutter during rapid menu navigation; industrial temp rating supports dash-mount reliability. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar SRAM applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| ISSI IS62WV102416BLL-55NLI | Same 1 M × 16 organization, 55 ns speed, but wider VCC range (2.5–3.6 V); no automatic power-down feature | Requires external power management for low-power sleep; suited for legacy 3.3 V systems only | Select if migrating from older 3.3 V designs and power budget permits higher ISB (~25 µA) |
| ON Semiconductor NVSRAM NVM1616-55 | Non-volatile SRAM with integrated EEPROM backup; same pinout but higher ICC (5 mA active), no BHE/BLE byte control | Eliminates external backup battery but lacks byte-selective writes - increases firmware complexity for partial updates | Choose only when data persistence across power loss is mandatory and byte-level granularity is secondary |
Compared with IS62WV102416BLL-55NLI and NVM1616-55, CY62167EV18LL-55BVXIT uniquely delivers sub-µA standby with automatic address-driven power-down and true 8-bit byte enables - making it optimal for energy-constrained, high-reliability portable systems where deterministic low-power behavior is non-negotiable.
Availability
CY62167EV18LL-55BVXIT is available at Aetrix Electronics and suitable for portable medical sensors, industrial PLC data buffers, wearable fitness trackers, and automotive infotainment UI caches requiring stable component supply with guaranteed long-term sourcing.
Supply support for CY62167EV18LL-55BVXIT includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Cypress Semiconductor (now part of Infineon Technologies) designs high-performance, low-power memory and programmable solutions for embedded systems, with global R&D centers and manufacturing partnerships across Asia and Europe.
This device belongs to the MoBL® (More Battery Life) SRAM product line, engineered specifically for ultra-low-voltage, ultra-low-power portable electronics where extended battery runtime and compact packaging are primary design constraints.
FAQ
What is the minimum VCC required to retain data in CY62167EV18LL-55BVXIT?
The device guarantees data retention down to 1.0 V VCC, as specified in the Data Retention Characteristics table. At this voltage, ICCDR remains ≤10 µA, and the part enters retention mode automatically when CE1 is HIGH or CE2 is LOW or both BHE and BLE are HIGH - no additional control signals needed.
Can CY62167EV18LL-55BVXIT operate reliably at 85 °C ambient temperature?
Yes - it is rated for industrial temperature range (–40 °C to +85 °C). Thermal resistance θJA is 55 °C/W, and all AC/DC specifications, including 55 ns access time and 12 µA max standby current, are guaranteed across this full range when mounted per JEDEC standards on a two-layer PCB.
How does the automatic power-down feature reduce power consumption?
When address lines remain static (no toggling), internal detection circuitry forces the SRAM into a deep standby state drawing only 1.5 µA typical. This occurs without software intervention - triggered solely by address stability - and recovers in ≤55 ns upon next address change, eliminating manual power-state management.
Is the 48-ball VFBGA package lead-free and RoHS-compliant?
Yes - the "-55BVXIT" suffix denotes a Pb-free, RoHS-compliant 48-ball VFBGA package with NiPdAu surface finish. It meets JEDEC J-STD-020D reflow profile requirements and supports standard SMT assembly processes without special handling or underfill.
CY62167EV18LL-55BVXIT Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Infineon Technologies
- Series:
- MOBL™
- Package/Case:
- 48-VFBGA
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- Programmable:
- Not Verified
- Memory Type:
- Volatile
- Memory Format:
- SRAM
- Technology:
- SRAM - Asynchronous
- Memory Size:
- 16Mbit
- Memory Organization:
- 1M x 16
- Memory Interface:
- Parallel
- Clock Frequency:
- -
- Write Cycle Time - Word, Page:
- 55ns
- Access Time:
- 55 ns
- Voltage - Supply:
- 1.65V ~ 2.25V
- Operating Temperature:
- -40°C ~ 85°C (TA)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 48-VFBGA (6x8)
CY62167EV18LL-55BVXIT FAQ
1.How can I place an order for CY62167EV18LL-55BVXIT through Aetrix?
Please submit a Request for Quotation (RFQ) for CY62167EV18LL-55BVXIT on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for CY62167EV18LL-55BVXIT reliable?
The price and inventory of CY62167EV18LL-55BVXIT are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for CY62167EV18LL-55BVXIT is usually 5 days.
3.What payment methods are accepted for CY62167EV18LL-55BVXIT?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for CY62167EV18LL-55BVXIT transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for CY62167EV18LL-55BVXIT?
CY62167EV18LL-55BVXIT orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your CY62167EV18LL-55BVXIT order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for CY62167EV18LL-55BVXIT?
For technical support, including CY62167EV18LL-55BVXIT datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your CY62167EV18LL-55BVXIT requirements.
6.How does Aetrix verify that CY62167EV18LL-55BVXIT is sourced from the original manufacturer or authorized distributors?
All CY62167EV18LL-55BVXIT products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that CY62167EV18LL-55BVXIT meets industry standards.
7.What is the process for return or replacement of CY62167EV18LL-55BVXIT?
All CY62167EV18LL-55BVXIT units undergo pre-shipment inspection (PSI). If there is an issue with CY62167EV18LL-55BVXIT, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The CY62167EV18LL-55BVXIT part is unused and in its original packaging.
Return procedure for CY62167EV18LL-55BVXIT:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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