Infineon Technologies CY62167EV30LL-45BVIT

Overview

CY62167EV30LL-45BVIT from Cypress Semiconductor is an automotive-grade 16-Mbit CMOS static RAM organized as 1M × 16 or 2M × 8, operating at 45 ns access time over –40 °C to +85 °C, with 2.2 V–3.6 V supply voltage, ultra-low standby current (1.5 µA typ), and automatic power-down capability. It serves as main data buffer in ADAS domain controllers requiring deterministic low-latency memory access under extended temperature conditions.

For engineers reviewing the CY62167EV30LL-45BVIT datasheet, CY62167EV30LL-45BVIT pinout, CY62167EV30LL-45BVIT application, or CY62167EV30LL-45BVIT equivalent, key selection considerations include its dual-configurable density mode, TSOP I/VFBGA package options, byte-enable-controlled 8-/16-bit bus interface, automotive-A qualification, and MoBL® ultra-low active/standby power profile.

Technical Context

The device implements a fully static CMOS architecture with independent high- and low-byte enables (BHE/BLE), dual chip enables (CE1/CE2), and automatic power-down triggered by address stability or chip deselect. Its read/write timing is defined by overlapping control signals - write initiation requires CE1 LOW, CE2 HIGH, WE LOW, and BHE or BLE LOW - with tRC = 45 ns guaranteed across automotive temperature range.

It supports two physical configurations: 48-ball VFBGA (ball H6 reserved for future 32M upgrade) and 48-pin TSOP I, where BYTE pin ties determine 1M×16 (BYTE = VCC) or 2M×8 (BYTE = VSS) operation. In 2M×8 mode, A20 appears on pin 45 and I/O8–I/O14 remain unused.

Key Specifications

Pinout & Package

Available in Pb-free 48-ball VFBGA (7 mm × 9 mm) and 48-pin TSOP I (12 mm × 20 mm) packages. Both support identical signal mapping except BYTE pin function and A20 routing in 2M×8 mode.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-speed automotive SRAM applications.

Compared with IS61WV102416BLL-10TLI and AS6C1008-55TIN, CY62167EV30LL-45BVIT uniquely delivers AEC-Q100-compliant 45 ns performance with integrated byte control and auto-power-down - reducing system-level design effort while meeting OEM functional safety readiness requirements.

Availability

CY62167EV30LL-45BVIT is available at Aetrix Electronics and suitable for ADAS sensor hubs, telematics control units, infotainment head units, and body control modules requiring stable component supply across automotive production lifecycles.

Supply support for CY62167EV30LL-45BVIT includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Cypress Semiconductor (now part of Infineon Technologies) designs high-reliability memory and microcontroller solutions for automotive, industrial, and IoT applications.

This part belongs to the MoBL® (More Battery Life) SRAM product line, engineered specifically for ultra-low-power, high-speed data buffering in battery-constrained automotive subsystems.

FAQ

What package types are supported for CY62167EV30LL-45BVIT?

The CY62167EV30LL-45BVIT is offered in two RoHS-compliant packages: 48-ball VFBGA (7 mm × 9 mm) and 48-pin TSOP I (12 mm × 20 mm). The VFBGA variant uses ball H6 as a future-die upgrade path to 32 Mbit density, while the TSOP I version requires BYTE pin tying to VCC or VSS to select 1M×16 or 2M×8 configuration respectively.

How does automatic power-down operate without external control signals?

Automatic power-down activates when address lines stabilize (no toggling), or when CE1 goes HIGH, CE2 goes LOW, or both BHE and BLE go HIGH. No external controller action is needed - the internal circuitry detects these conditions and reduces ICC to ≤12 µA. This feature is enabled by default and requires no configuration register writes.

Can CY62167EV30LL-45BVIT be used in 2M×8 mode on a 1M×16-designed PCB?

Yes, but with hardware modification: BYTE must be tied to VSS instead of VCC, pin 45 becomes A20 (not NC), and I/O8–I/O14 must be left unconnected or terminated. The 16-bit data bus becomes functionally 8-bit, so software must remap accesses to use only I/O0–I/O7 and decode A20 externally if required.

Is data retention guaranteed below 2.2 V supply?

Yes - data retention is specified down to VDR = 1.5 V, with ICCDR ≤10 µA across the automotive temperature range. This allows safe operation during brown-out events or capacitor-based backup, provided CE1, CE2, BHE, and BLE are held at valid CMOS levels per datasheet Section 6.