Infineon Technologies CY62167EV30LL-45BVXA

Overview

CY62167EV30LL-45BVXA from Cypress Semiconductor is an automotive-grade 16-Mbit CMOS static RAM organized as 1M × 16 or 2M × 8, operating at 45 ns access time over –40 °C to +85 °C, with ultra-low standby current (1.5 µA typ) and wide V_CC range (2.2–3.6 V), deployed in infotainment head units for nonvolatile cache buffering.

For engineers reviewing the CY62167EV30LL-45BVXA datasheet, CY62167EV30LL-45BVXA pinout, CY62167EV30LL-45BVXA application, or CY62167EV30LL-45BVXA equivalent, key selection criteria include automotive temperature compliance, byte-selectable 16-/8-bit bus configuration, automatic power-down behavior, and VFBGA vs. TSOP I package compatibility in space-constrained ECUs.

Technical Context

This SRAM implements dual chip enable (CE1/CE2) logic with independent byte enables (BHE/BLE) to support flexible 16-bit or 8-bit data bus interfacing. Its automatic power-down circuit reduces current by 99% when CE1 is HIGH, CE2 is LOW, or both BHE and BLE are HIGH - enabling deterministic low-power states without external control logic.

It supports two distinct memory configurations: 1M × 16 (with BYTE tied to V_CC) or 2M × 8 (with BYTE tied to V_SS), where A20 appears on I/O15 in 2M × 8 mode on TSOP I. The device guarantees t_RC = 45 ns, t_DOE = 22 ns, and t_PD = 45 ns across full automotive voltage and temperature range.

Key Specifications

Pinout & Package

48-ball Very Thin Fine-Pitch Ball Grid Array (VFBGA) package with 0.8 mm ball pitch, 6 mm × 8 mm body size, and JEDEC MO-276AA compliant footprint. Pin 1 (A15) located at corner A1; balls H6 and NC are unconnected.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-speed automotive SRAM applications.

Compared with IS61WV102416BLL-10TLI and AS6C1008-55TIN, CY62167EV30LL-45BVXA uniquely delivers AEC-Q100 compliance, configurable bus width, and sub-2 µA standby in a single VFBGA package - critical for safety-critical ADAS and infotainment platforms requiring zero qualification overhead.

Availability

CY62167EV30LL-45BVXA is available at Aetrix Electronics and suitable for automotive infotainment systems, digital instrument clusters, and ADAS pre-processing units requiring stable component supply across extended product lifecycles.

Supply support for CY62167EV30LL-45BVXA includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Cypress Semiconductor (now part of Infineon Technologies) designs high-reliability memory and microcontroller solutions for automotive, industrial, and IoT applications, with global manufacturing and quality systems certified to ISO/TS 16949.

CY62167EV30 belongs to the MoBL® (More Battery Life) SRAM product line, engineered specifically for ultra-low-power, high-speed data buffering in automotive electronics where thermal constraints and battery longevity are critical.

FAQ

What is the function of the BYTE pin on CY62167EV30LL-45BVXA?

The BYTE pin configures memory organization: tied to V_CC, it enables 1M × 16 mode; tied to V_SS, it enables 2M × 8 mode. In VFBGA packaging, BYTE is internally fixed and not bonded out - only applicable to TSOP I variants. This hardware-selectable width eliminates external address decoding logic.

Does CY62167EV30LL-45BVXA support true 16-bit parallel access?

Yes - with BHE and BLE independently controlled, the device performs true concurrent high-byte and low-byte writes or reads. When BHE = LOW and BLE = LOW, all 16 I/O lines (I/O0–I/O15) are active. This enables full 16-bit bus utilization without cycle splitting or glue logic.

How does automatic power-down behave during partial address changes?

Automatic power-down activates only when *all* address lines are stable for >100 ns while CE1 is HIGH or CE2 is LOW or both BHE and BLE are HIGH. Partial toggling (e.g., A0–A9 only) does not trigger power-down - ensuring reliable operation during burst accesses with shared upper address bits.

Can CY62167EV30LL-45BVXA retain data at V_CC = 1.5 V?

Yes - data retention is guaranteed down to V_CC = 1.5 V, with ICCDR ≤ 10 µA across –40 °C to +85 °C. This allows safe operation during automotive cold-cranking events where main supply dips below 2.0 V, preserving critical boot parameters and calibration data.