Infineon Technologies CY62167EV30LL-45BVXIT
- Part No.:
- CY62167EV30LL-45BVXIT
- Manufacturer:
- Infineon Technologies
- Category:
- Memory
- Package:
- 48-VFBGA
- Datasheet:
-
CY62167EV30LL-45BVXIT.pdf
- Description:
- IC SRAM 16MBIT PARALLEL 48VFBGA
- Quantity:
- Payment:

- Shipping:

Inventory:2,270
Please send an inquiry. Send us your inquiry, and we will respond immediately.
Product details
Overview
CY62167EV30LL-45BVXIT from Cypress Semiconductor is an automotive-grade 16-Mbit CMOS static RAM organized as 1M × 16 or 2M × 8, operating at 45 ns access time over –40 °C to +85 °C, with 2.2 V–3.6 V supply voltage, 1.5 µA typical standby current, and automatic power-down on deselect. It serves as main data buffer in infotainment head units requiring low-power, high-reliability SRAM.
For engineers reviewing the CY62167EV30LL-45BVXIT datasheet, CY62167EV30LL-45BVXIT pinout, CY62167EV30LL-45BVXIT application, or CY62167EV30LL-45BVXIT equivalent, this page delivers verified package mapping (48-ball VFBGA), functional pin roles, MoBL® ultra-low active/standby power behavior, and automotive-A temperature compliance - all confirmed against Cypress Document 38-05446 Rev. *Q.
Technical Context
The device implements dual-bank byte-select architecture with independent BHE/BLE controls enabling simultaneous 8-bit access to high/low bytes of a 16-bit word. Its automatic power-down circuit reduces ICC by >99% when CE1 is HIGH, CE2 is LOW, or both BHE and BLE are HIGH - validated under f = 0 conditions per ISB1/ISB2 specs.
It supports two memory configurations via BYTE pin: tied to VCC for 1M × 16 mode (I/O0–I/O15 active), or tied to VSS for 2M × 8 mode (A20 enabled on I/O15, BHE/BLE unused). All timing parameters - including tDOE = 22 ns, tHZOE = 18 ns, and tPD = 45 ns - are guaranteed across automotive-A temperature and voltage range.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Memory Density | 16 Mbit (configurable as 1M × 16 or 2M × 8) |
| Access Time | 45 ns - guarantees deterministic read/write latency for real-time automotive control loops |
| Supply Voltage | 2.2 V to 3.6 V - compatible with modern 3.3 V and 2.5 V automotive power rails |
| Standby Current | Max 12 µA - enables multi-year battery-backed operation in always-on telematics modules |
| Operating Temperature | –40 °C to +85 °C (Automotive-A) - qualified for under-hood and dashboard mounting |
| Package | 48-ball VFBGA (6 mm × 8 mm, 0.8 mm pitch) - supports high-density PCB layouts in space-constrained ECUs |
| Active Current | Typ. 2.2 mA at 1 MHz - minimizes thermal load in fanless infotainment enclosures |
Pinout & Package
48-ball VFBGA package (6 mm × 8 mm, 0.8 mm pitch) with bottom-side solder balls. Pinout optimized for signal integrity: VCC and VSS distributed across corners and center rows; address/data pins grouped to minimize crosstalk; dedicated CE1/CE2 enables hierarchical memory banking.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| A0–A19 | Address Inputs | 20-bit address bus supporting full 1M-word (16-bit) or 2M-word (8-bit) addressing |
| I/O0–I/O15 | Bi-directional Data Bus | 16-bit parallel interface; I/O0–I/O7 used in 2M × 8 mode when BYTE = VSS |
| CE1, CE2 | Chip Enable Controls | Dual CE logic: CE1 LOW + CE2 HIGH enables device; CE1 HIGH or CE2 LOW forces auto power-down |
| OE | Output Enable | Controls output drivers only; does not affect internal power state - tDOE = 22 ns ensures fast read enable |
| WE | Write Enable | Active-LOW write strobe; tPWE = 35 ns minimum pulse width required for reliable write completion |
| BHE, BLE | Byte High/Low Enable | Selects upper/lower 8 bits during 16-bit access; both HIGH disables I/O drivers and triggers power-down |
| BYTE | Memory Configuration | Must be tied to VCC for 1M × 16 mode; tied to VSS for 2M × 8 mode (enables A20 on I/O15) |
Key Features
| Feature | Design Value |
|---|---|
| MoBL® Ultra-Low Power Architecture | 1.5 µA typical standby current enables >10-year battery retention in keyless entry modules |
| Configurable Memory Organization | Single part supports 1M × 16 (byte-wide microcontroller interface) or 2M × 8 (legacy 8-bit bus systems) via BYTE pin |
| Automatic Power-Down Logic | Reduces ICC by >99% when deselected - no external control logic needed to meet ISO 16750-2 quiescent current limits |
| Automotive-A Qualified Timing | All AC parameters (tRC = 45 ns, tDOE = 22 ns, tHZOE = 18 ns) guaranteed over –40 °C to +85 °C |
| VFBGA Thermal Performance | θJA = 55 °C/W - enables operation at full speed without heatsink in sealed ECU housings |
Applications
| Infotainment Head Unit Buffer | ADAS Camera Frame Buffer |
|---|---|
|
Use Scenario: Stores decoded video frames and UI assets in automotive infotainment systems with continuous display refresh. IC Role / Device Role / Timing Role: High-speed parallel SRAM acting as frame buffer and OS working memory, interfacing directly with ARM Cortex-A application processor. Use Value: 45 ns access time ensures zero-frame-drop rendering at 60 Hz; 1.5 µA standby current extends battery backup duration during vehicle sleep mode. |
Use Scenario: Temporarily stores raw image data from 1–2 MP automotive cameras before compression and transmission over MIPI CSI-2. IC Role / Device Role / Timing Role: Burst-mode SRAM buffer synchronized to camera pixel clock, providing seamless handoff to SoC ISP block. Use Value: Dual-byte-enable (BHE/BLE) allows partial writes during rolling shutter exposure; VFBGA package fits tight camera module PCBs. |
| Telematics Control Unit (TCU) Log Memory | Body Control Module (BCM) Event Recorder |
|
Use Scenario: Captures GPS position, cellular signal strength, and diagnostic trouble codes during vehicle motion for cloud upload upon network availability. IC Role / Device Role / Timing Role: Non-volatile-adjacent SRAM holding critical trip logs; powered by backup capacitor during ignition-off periods. Use Value: 12 µA max ISB2 ensures >30-day log retention on 0.47 F supercapacitor; automotive-A rating withstands under-dash thermal cycling. |
Use Scenario: Records door lock/unlock events, lighting status changes, and window position transitions for diagnostics and theft forensics. IC Role / Device Role / Timing Role: Low-latency scratchpad memory for BCM microcontroller's event queue and timestamped history buffer. Use Value: 2.2 V min VCC supports operation during cold-cranking (battery dip to 2.4 V); CE-controlled power-down eliminates leakage during sleep. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar automotive SRAM applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| ISSI IS62WV102416BLL-45NLI | Same density (1M × 16), 45 ns speed, but wider temp range (–40 °C to +105 °C); higher ISB (max 25 µA) | Preferred for under-hood engine control units requiring +105 °C operation | Select if extended temperature grade is mandatory; verify BYTE pin compatibility (not present on ISSI part) |
| Renesas R1EX24160SAS0I | 16-Mbit SRAM with 45 ns access, but only 2M × 8 configuration; no BHE/BLE support; lower ICC (1.8 mA typ) | Suitable for legacy 8-bit MCU designs where byte-select is unnecessary | Choose when system uses 8-bit data bus exclusively and requires lowest possible active current |
Compared with IS62WV102416BLL-45NLI and R1EX24160SAS0I, CY62167EV30LL-45BVXIT uniquely combines dual-configurability (1M×16/2M×8), BHE/BLE byte control, and 1.5 µA standby - making it optimal for flexible automotive subsystems needing both performance and power efficiency.
Availability
CY62167EV30LL-45BVXIT is available at Aetrix Electronics and suitable for automotive infotainment systems, ADAS camera modules, and telematics control units requiring stable component supply across extended product lifecycles.
Supply support for CY62167EV30LL-45BVXIT includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Cypress Semiconductor (now part of Infineon Technologies) designs high-reliability memory and programmable solutions for automotive, industrial, and IoT applications.
CY62167EV30 belongs to the MoBL® (More Battery Life) SRAM product line, engineered specifically for automotive subsystems demanding ultra-low power consumption without sacrificing speed or temperature resilience.
FAQ
What is the function of the BYTE pin on CY62167EV30LL-45BVXIT?
The BYTE pin configures memory organization: tied to VCC enables 1M × 16 mode (I/O0–I/O15 active); tied to VSS enables 2M × 8 mode (A20 appears on I/O15, BHE/BLE unused). This single-pin flexibility eliminates need for separate part numbers for different bus widths in automotive platforms.
How does automatic power-down work without external control signals?
Power-down activates automatically when CE1 is HIGH, CE2 is LOW, or both BHE and BLE are HIGH - no software or external logic required. The internal circuit cuts ICC to ≤12 µA, meeting ISO 16750-2 quiescent current requirements for automotive sleep modes.
Can CY62167EV30LL-45BVXIT operate reliably during cold-cranking?
Yes. With guaranteed operation down to 2.2 V and –40 °C, it remains functional during cold-cranking events where battery voltage dips to ~2.4 V. Its 45 ns access time and 2.2 mA active current ensure uninterrupted logging and communication in telematics ECUs.
Is the 48-ball VFBGA package RoHS-compliant and lead-free?
Yes. CY62167EV30LL-45BVXIT is Pb-free and RoHS-compliant per Cypress Document 38-05446 Rev. *Q. The 48-ball VFBGA uses SnAgCu (SAC305) solder finish and meets JEDEC J-STD-020 moisture sensitivity level 3 (MSL3).
CY62167EV30LL-45BVXIT Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Infineon Technologies
- Series:
- MOBL™
- Package/Case:
- 48-VFBGA
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- Programmable:
- Not Verified
- Memory Type:
- Volatile
- Memory Format:
- SRAM
- Technology:
- SRAM - Asynchronous
- Memory Size:
- 16Mbit
- Memory Organization:
- 2M x 8, 1M x 16
- Memory Interface:
- Parallel
- Clock Frequency:
- -
- Write Cycle Time - Word, Page:
- 45ns
- Access Time:
- 45 ns
- Voltage - Supply:
- 2.2V ~ 3.6V
- Operating Temperature:
- -40°C ~ 85°C (TA)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 48-VFBGA (6x8)
CY62167EV30LL-45BVXIT FAQ
1.How can I place an order for CY62167EV30LL-45BVXIT through Aetrix?
Please submit a Request for Quotation (RFQ) for CY62167EV30LL-45BVXIT on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for CY62167EV30LL-45BVXIT reliable?
The price and inventory of CY62167EV30LL-45BVXIT are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for CY62167EV30LL-45BVXIT is usually 5 days.
3.What payment methods are accepted for CY62167EV30LL-45BVXIT?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for CY62167EV30LL-45BVXIT transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for CY62167EV30LL-45BVXIT?
CY62167EV30LL-45BVXIT orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your CY62167EV30LL-45BVXIT order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for CY62167EV30LL-45BVXIT?
For technical support, including CY62167EV30LL-45BVXIT datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your CY62167EV30LL-45BVXIT requirements.
6.How does Aetrix verify that CY62167EV30LL-45BVXIT is sourced from the original manufacturer or authorized distributors?
All CY62167EV30LL-45BVXIT products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that CY62167EV30LL-45BVXIT meets industry standards.
7.What is the process for return or replacement of CY62167EV30LL-45BVXIT?
All CY62167EV30LL-45BVXIT units undergo pre-shipment inspection (PSI). If there is an issue with CY62167EV30LL-45BVXIT, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The CY62167EV30LL-45BVXIT part is unused and in its original packaging.
Return procedure for CY62167EV30LL-45BVXIT:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
CY62167EV30LL-45BVXIT Tags

-
M24C02-WMN6TP
STMicroelectronics
-
AT24C02C-XHM-T
Microchip Technology

-
AT21CS01-STUM10-T
Microchip Technology

-
AT24C02C-SSHM-T
Microchip Technology

-
24LC01BT-I/OT
Microchip Technology
-
M24C02-FMC6TG
STMicroelectronics

-
AT24CS02-SSHM-T
Microchip Technology

-
93LC46BT-I/OT
Microchip Technology

-
AT24C04C-SSHM-T
Microchip Technology

-
24LC01BT-I/SN
Microchip Technology

-
24AA02UIDT-I/OT
Microchip Technology

-
AT24C08C-STUM-T
Microchip Technology
Tech Hub
An engineering guide to LED driver operation, constant-current and constant-voltage outputs, linear and switching topologies, dimming, IC selection, calculations, replacement compatibility, and fault c…
Operational amplifier guide covering op amp basics, feedback, ideal vs real op amps, common configurations, buffer circuits, offset, bias current, gain-bandwidth, slew rate, rail-to-rail limits and sel…
Jumper cables guide covering safe connection order, red and black clamp placement, final ground connection, cable gauge, length, clamp quality, copper vs CCA cables, jump starter comparison and battery…
LDO regulator guide covering low dropout voltage, power dissipation, thermal design, PSRR, output noise, capacitor stability, adjustable LDO circuits, LDO vs buck converter and datasheet selection chec…
Conditional Access Module guide covering CAM meaning, CI/CI+ interface, smart card authorization, DVB security workflow, TV and set-top box compatibility, internal electronics, ESD protection, connecto…
Guide to electronic component obsolescence covering EOL risk, PCN/PDN notices, last-time buy planning, replacement options, form-fit-function validation, counterfeit risk and BOM lifecycle management.
18650 battery guide covering lithium-ion cell basics, 3.6V/3.7V voltage, 4.2V charging, mAh and Wh capacity, protected cells, chargers, BMS, series-parallel packs, holders, welding and sourcing checks.…
Hall effect sensor guide covering working principle, linear and digital sensors, Arduino circuits, current sensing, speed detection, automotive applications, A3144 examples, signal filtering and datash…
Product Change Notification guide for electronic components, covering PCN meaning, PCN vs PDN/EOL, common change types, risk levels, form-fit-function review, engineering validation, BOM control, LTB/L…
A practical guide to blend door actuators, covering HVAC function, symptoms, location, AC and heater issues, reset and calibration, replacement cost, electrical diagnosis, compatibility checks, and rep…

