Infineon Technologies CY62167EV30LL-45ZXIT

Overview

CY62167EV30LL-45ZXIT from Cypress Semiconductor is an automotive-grade 16-Mbit CMOS static RAM organized as 1M × 16 or 2M × 8, operating at 45 ns access time over –40 °C to +85 °C, with 2.2 V–3.6 V supply and ultra-low standby current (1.5 µA typ). It serves as main data buffer in engine control units and ADAS domain controllers requiring deterministic timing and low-power retention.

For engineers reviewing the CY62167EV30LL-45ZXIT datasheet, CY62167EV30LL-45ZXIT pinout, CY62167EV30LL-45ZXIT application, or CY62167EV30LL-45ZXIT equivalent, key selection criteria include configurable bus width (16-bit/8-bit), automotive temperature compliance, automatic power-down behavior, and dual-package availability (TSOP I / VFBGA).

Technical Context

This SRAM implements a dual-bank byte-enable architecture with independent BHE and BLE controls, enabling selective 8-bit writes to high or low byte lanes without disturbing adjacent data. Its automatic power-down circuit reduces ICC by >99% when CE1 is HIGH or CE2 is LOW or both BHE and BLE are HIGH - verified under f = 0 conditions at VCC(max) and 85 °C.

The device supports two physical configurations: TSOP I (48-pin) with BYTE pin tied to VCC for 1M×16 mode or VSS for 2M×8 mode (where A20 appears on pin 45), and VFBGA (48-ball) with NC pins unconnected and H6 reserved for future density upgrade. All switching parameters are guaranteed over full automotive voltage and temperature range.

Key Specifications

Pinout & Package

Package: 48-pin TSOP I (Type I, 12 mm × 20 mm, 0.5 mm pitch) and 48-ball VFBGA (6 mm × 8 mm, 0.8 mm ball pitch). Pin functions validated per Figure 2 (TSOP I) and Figure 1 (VFBGA) in Document 38-05446 Rev. *Q.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-speed automotive SRAM applications.

Compared with IS61WV102416BLL-10MLI and AS6C1008-55TIN, CY62167EV30LL-45ZXIT uniquely delivers AEC-Q100 compliance, dual-bus-width flexibility, and sub-µA standby - making it the only choice for new automotive designs requiring functional safety alignment and long-term supply stability.

Availability

CY62167EV30LL-45ZXIT is available at Aetrix Electronics and suitable for engine control units, ADAS domain controllers, and body control modules requiring stable component supply across automotive production lifecycles.

Supply support for CY62167EV30LL-45ZXIT includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Cypress Semiconductor (now part of Infineon Technologies) designs high-reliability memory and programmable solutions for automotive, industrial, and IoT applications.

CY62167EV30 belongs to the MoBL® (More Battery Life) SRAM product line, engineered specifically for ultra-low-power, high-speed data buffering in battery-constrained automotive subsystems.

FAQ

What package types are offered for CY62167EV30LL-45ZXIT?

CY62167EV30LL-45ZXIT is supplied exclusively in the 48-pin TSOP I package (Z suffix), as indicated by the 'Z' in the part number. The 'XIT' suffix denotes tape-and-reel packaging with industrial temperature screening, though the device itself is rated for Automotive-A (–40 °C to +85 °C) operation. The VFBGA variant uses a different ordering code (e.g., CY62167EV30LL-45BAXI).

How does the BYTE pin function in TSOP I configuration?

In the 48-pin TSOP I package, the BYTE pin (pin 45) must be tied to VCC for 1M × 16 operation or to VSS for 2M × 8 operation. When configured as 2M × 8, pin 45 becomes A20, and I/O8–I/O14, BHE, and BLE are unused - confirmed in the Pin Configuration section (page 3) and Product Portfolio table (page 3) of datasheet 38-05446 Rev. *Q.

Does CY62167EV30LL-45ZXIT support true 16-bit writes without byte masking?

Yes - when both BHE and BLE are asserted LOW simultaneously, the full 16-bit data path (I/O0–I/O15) is enabled for atomic writes. The device does not require external byte-mask logic; internal decoding ensures simultaneous activation of both byte lanes only when both enables are active, as defined in the Functional Description (page 1) and Truth Table (page 12).

What is the minimum VCC required to retain data after power loss?

Data retention is guaranteed down to VCC = 1.5 V, as specified in the Data Retention Characteristics table (page 6, parameter VDR). At this voltage, ICCDR remains ≤10 µA across the full automotive temperature range, enabling reliable holdover during brown-out conditions typical in 12 V automotive electrical systems.