Infineon Technologies CY62167G18-55BVXI

Overview

CY62167G18-55BVXI from Infineon Technologies (formerly Cypress) is a 16-Mbit MoBL® low-power SRAM with embedded single-bit error-correcting code (ECC), configurable as 1M × 16 or 2M × 8, operating at 55 ns access time, 1.65–2.2 V or 4.5–5.5 V supply, and featuring ultra-low 5.5 µA typical standby current. It serves in industrial embedded systems requiring data integrity and power efficiency, such as programmable logic controllers and real-time data buffers.

For engineers reviewing the CY62167G18-55BVXI datasheet, CY62167G18-55BVXI pinout, CY62167G18-55BVXI application, or CY62167G18-55BVXI equivalent, this page delivers verified package mapping (48-ball VFBGA), ECC-enabled read/write behavior, byte-select power-down control, ERR signal functionality, and dual-voltage domain operation - all critical for memory subsystem validation and BOM migration.

Technical Context

This SRAM implements a synchronous, CMOS-based memory array with integrated ECC encode/decode logic that detects and corrects single-bit errors during read cycles without automatic write-back. Its dual chip enable (CE1/CE2) architecture supports hierarchical memory banking, while BHE/BLE pins enable independent upper/lower byte writes and reads.

The device supports two distinct voltage domains: low-voltage (1.65–2.2 V) for portable and battery-backed applications, and legacy 5 V (4.5–5.5 V) for industrial backplanes. The BYTE pin configures the 48-pin TSOP I variant between 1M×16 and 2M×8 modes; in VFBGA, configuration is fixed per ordering code - CY62167G18-55BVXI uses dual CE and includes ERR output.

Key Specifications

Pinout & Package

Package: 48-ball Very Thin Fine-Pitch Ball Grid Array (VFBGA), 6 mm × 8 mm, 0.5 mm pitch, Pb-free, RoHS-compliant.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar ECC SRAM applications.

Compared with IS61WV102416BLL-10MLI and MT48LC16M16A2P-75:C, CY62167G18-55BVXI uniquely delivers hardware ECC with zero software overhead, sub-10 µA standby, and true asynchronous operation - making it irreplaceable in safety-critical, battery-limited, or controllerless memory applications.

Availability

CY62167G18-55BVXI is available at Aetrix Electronics and suitable for industrial PLCs, medical diagnostic equipment, avionics data loggers, and ruggedized edge gateways requiring stable component supply, long-term lifecycle support, and guaranteed ECC functionality.

Supply support for CY62167G18-55BVXI includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies acquired Cypress Semiconductor in 2020 and now owns and supports the MoBL® SRAM portfolio, including legacy Cypress memory products. Infineon is a global semiconductor leader headquartered in Munich, Germany.

CY62167G18-55BVXI belongs to the MoBL® (Mobile Bit-Low-power) SRAM product line, designed specifically for industrial and automotive applications demanding ultra-low standby power, data integrity, and wide operating voltage ranges without compromising access speed.

FAQ

Does CY62167G18-55BVXI support automatic error correction write-back?

No. The device performs single-bit error detection and correction during read cycles only, and does not automatically write the corrected data back to the memory array. System firmware must initiate any corrective write if persistent correction is required. This design reduces complexity and power consumption while maintaining data integrity for read-dominant applications.

What is the function of the BYTE pin on CY62167G18-55BVXI?

The BYTE pin is not present on the 48-ball VFBGA package used by CY62167G18-55BVXI; it applies only to the 48-pin TSOP I variant. In VFBGA, memory organization (1M×16 or 2M×8) is fixed per part number - CY62167G18-55BVXI is configured as 1M×16 with dual CE and ERR output, eliminating external configuration dependencies.

Can CY62167G18-55BVXI operate at 3.3 V?

No. The device is specified only for 1.65–2.2 V or 4.5–5.5 V VCC operation. Applying 3.3 V violates absolute maximum ratings and may cause undefined behavior, data corruption, or permanent damage. For 3.3 V systems, consider voltage translation or alternate SRAM families explicitly rated for that range.

How is the ERR pin electrically interfaced?

The ERR pin is an open-drain output requiring an external pull-up resistor to VCC. It asserts HIGH during a read cycle when a single-bit error is detected and corrected. The pin remains LOW otherwise, including during normal reads, writes, or standby. No internal pull-up is provided, and floating connection is not permitted.