My Inquiry
My Account
Infineon Technologies CY62167G18-55ZXI
- Part No.:
- CY62167G18-55ZXI
- Manufacturer:
- Infineon Technologies
- Category:
- Memory
- Package:
- 48-TFSOP (0.724", 18.40mm Width)
- Datasheet:
-
CY62167G18-55ZXI.pdf
- Description:
- IC SRAM 16MBIT PARALLEL 48TSOP I
- Quantity:
- Payment:
- Shipping:
Inventory:1,948
Please send an inquiry. Send us your inquiry, and we will respond immediately.
Product details
Overview
CY62167G18-55ZXI from Infineon Technologies (formerly Cypress) is a 16-Mbit MoBL® low-power SRAM with embedded single-bit error-correcting code (ECC), configurable as 1M × 16 or 2M × 8, operating at 55 ns access time over 1.65–2.2 V or 4.5–5.5 V supply, and featuring TTL-compatible I/Os and an ERR pin for real-time ECC event indication - deployed in industrial control memory buffers requiring data integrity.
For engineers reviewing the CY62167G18-55ZXI datasheet, CY62167G18-55ZXI pinout, CY62167G18-55ZXI application, or CY62167G18-55ZXI equivalent, key selection criteria include dual-voltage support, byte-select power-down capability, ECC status signaling via ERR, and TSOP I package compatibility with legacy 48-pin footprint designs.
Technical Context
This SRAM integrates dedicated ECC encode/decode circuitry that detects and corrects single-bit errors on every read cycle without software intervention, using on-die syndrome generation and correction logic. The device supports both single and dual chip enable configurations, with CE/CE1+CE2 modes enabling flexible memory mapping in multi-bank systems.
Its Byte Power-down feature asserts high-impedance on all I/Os and enters ultra-low standby mode when both BHE and BLE are deasserted - independent of CE state - delivering 5.5 µA typical ISB2 at 1.8 V. The ERR output is asserted high only during active correction events, providing hardware-level fault visibility without interrupt overhead.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Memory Density | 16 Mbit (configurable as 1M × 16 or 2M × 8) |
| Access Time | 55 ns max at 1.65–2.2 V; enables synchronous interface timing with 18 MHz controllers |
| Supply Voltage Ranges | 1.65–2.2 V and 4.5–5.5 V - supports dual-rail legacy and low-voltage modern systems |
| Standby Current | 16 µA max at 1.8 V - meets battery-backed industrial data retention requirements |
| ECC Function | Hardware-based single-bit error detection and correction per read access, no firmware overhead |
| ERR Pin Behavior | Active-HIGH open-drain output signaling correction event during read cycle only |
| Package | 48-pin TSOP I (Type I) - industry-standard footprint compatible with JEDEC MO-143AA |
Pinout & Package
The CY62167G18-55ZXI is supplied in a 48-pin Thin Small Outline Package (TSOP I), Type I, with 0.5 mm pitch and 12.0 × 20.0 mm body size. Pin configuration supports dual chip enable (CE1/CE2) and includes dedicated ERR, BHE, BLE, BYTE, and address/data multiplexing pins.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| A0–A19 | Address Inputs | 20-bit address bus; A20 available as I/O15 in 2M×8 mode when BYTE = VSS |
| I/O0–I/O15 | Bidirectional Data Bus | 16-bit parallel interface; split into I/O0–I/O7 (BLE-controlled) and I/O8–I/O15 (BHE-controlled) |
| CE1, CE2 | Dual Chip Enable Inputs | CE1 = LOW and CE2 = HIGH required for access; enables bank isolation in multi-SRAM systems |
| WE | Write Enable Input | Active-LOW write strobe; latches data on rising edge of WE when OE is inactive |
| OE | Output Enable Input | Active-LOW control for data bus tristate; must be asserted for valid read output |
| BHE, BLE | Byte Enable Inputs | Control upper/lower byte writes and reads; both LOW triggers Byte Power-down mode |
| ERR | Error Indication Output | Open-drain, active-HIGH signal pulsed during single-bit correction; requires external pull-up |
| BYTE | Memory Width Configuration | Tied to VCC for 1M×16 mode; tied to VSS for 2M×8 mode (enables A20 on I/O15) |
Key Features
| Feature | Design Value |
|---|---|
| Embedded ECC Engine | On-die hardware correction logic eliminates need for external error-handling firmware or redundant memory |
| Byte Power-down Mode | Automatic transition to 5.5 µA standby when BHE and BLE are both inactive - no CE dependency |
| Dual-Voltage Operation | Single device supports both 1.8 V microcontroller interfaces and 5 V legacy backplanes |
| TTL-Compatible I/O | Direct connection to 5 V logic without level shifters; VIH/VIL thresholds validated across full VCC range |
| ERR Pin Signaling | Hardware-asserted pulse synchronized to corrected read cycle - enables real-time diagnostics without polling |
Applications
| Industrial PLC Memory Buffer | Medical Diagnostic Data Cache |
|---|---|
|
Use Scenario: Storing real-time sensor acquisition buffers in programmable logic controllers where intermittent power loss or EMI may induce bit flips. IC Role / Device Role / Timing Role: Primary volatile memory buffer with ECC-enabled read path ensuring uncorrupted register snapshots during watchdog-triggered recovery. Use Value: Eliminates post-reboot memory scrubbing routines and prevents spurious fault alarms caused by undetected single-bit errors. |
Use Scenario: Caching image frame metadata and calibration coefficients in portable ultrasound devices operating on battery power. IC Role / Device Role / Timing Role: Low-voltage (1.8 V) SRAM holding critical nonvolatile configuration data during active scanning cycles. Use Value: 5.5 µA standby current extends battery life between charges while ECC guarantees integrity of calibration parameters. |
| Avionics Data Logger | Automotive ADAS Pre-Event Buffer |
|
Use Scenario: Capturing flight parameter telemetry in certified avionics recorders where data corruption violates DO-178C traceability. IC Role / Device Role / Timing Role: High-reliability SRAM with ERR pin feeding FPGA-based error logging logic for audit trail generation. Use Value: Hardware ECC + ERR pulse provides deterministic, timestampable evidence of error occurrence and correction. |
Use Scenario: Ring-buffering radar pre-crash sensor streams in automotive ADAS ECUs before event-triggered flash storage. IC Role / Device Role / Timing Role: 55 ns access time enables continuous 100+ MB/s streaming into 16-bit parallel interface without FIFO bottlenecks. Use Value: Dual-voltage support allows direct interfacing with both 1.8 V radar SoCs and 5 V CAN transceiver domains. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar ECC SRAM applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| ISSI IS61WV102416BLL-10MLI | No integrated ECC; requires external error handling; 10 ns faster (10 ns access), but higher 30 µA ISB | Lacks hardware ERR signaling; suitable only where firmware-managed ECC is acceptable | Select when speed > integrity, and system-level ECC implementation is already in place |
| Renesas R1EX24160AS0C0I#U0 | Includes ECC but uses different pinout (54-pin TSOPII); ERR function mapped to different pin; 40 ns access | Not pin-compatible; requires PCB redesign; supports wider temperature range (–40°C to +105°C) | Select when extended temperature operation is mandatory and layout revision is feasible |
Compared with IS61WV102416BLL-10MLI and R1EX24160AS0C0I#U0, CY62167G18-55ZXI uniquely balances pin-compatible ECC integration, dual-voltage flexibility, and ultra-low standby in a standard 48-pin TSOP I - making it optimal for drop-in reliability upgrades in existing industrial designs.
Availability
CY62167G18-55ZXI is available at Aetrix Electronics and suitable for industrial PLC memory buffers, medical diagnostic data caches, avionics data loggers, and automotive ADAS pre-event buffers requiring stable component supply across long-lifecycle programs.
Supply support for CY62167G18-55ZXI includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Infineon Technologies acquired Cypress Semiconductor in 2020 and maintains its high-reliability memory portfolio, including MoBL® low-power SRAMs designed for mission-critical embedded systems.
CY62167G18-55ZXI belongs to the MoBL® (Mobile Bitline) SRAM product line, engineered specifically for battery-sensitive and data-integrity-critical applications in industrial, medical, and transportation electronics.
FAQ
Does CY62167G18-55ZXI support automatic error correction without CPU intervention?
Yes. The device performs full hardware-based single-bit error detection and correction on every read cycle using on-die ECC logic. No firmware, DMA, or CPU involvement is required - correction occurs transparently during data output, and the ERR pin signals completion. This is confirmed in the functional description and truth table of datasheet 001-81537 Rev. *R.
Can CY62167G18-55ZXI operate at 3.3 V?
No. The device is specified only for two discrete voltage ranges: 1.65–2.2 V and 4.5–5.5 V. It does not support 3.3 V operation, and applying 3.3 V violates absolute maximum ratings per Section 7 of the datasheet. Interfacing with 3.3 V systems requires level translation or selection of a compatible voltage-range variant.
What is the function of the BYTE pin in CY62167G18-55ZXI?
The BYTE pin configures memory organization: tied to VCC for 1M × 16 mode (standard), or to VSS for 2M × 8 mode - which repurposes I/O15 as address line A20. In 2M × 8 mode, BHE, BLE, and I/O8–I/O14 become no-connect and must be left floating, as documented in Figures 4 and 8 of the datasheet.
Is the ERR pin actively driven or open-drain?
The ERR pin is an open-drain output requiring an external pull-up resistor (typically 4.7 kΩ to VCC). It asserts LOW-to-HIGH during single-bit correction events and remains high-impedance otherwise. This behavior is explicitly defined in the "ERR Output – CY62167GE" section (page 16) and pin configuration diagrams.
CY62167G18-55ZXI Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Infineon Technologies
- Series:
- MOBL™
- Package/Case:
- 48-TFSOP (0.724", 18.40mm Width)
- Packaging:
- Tray
- Product Status:
- Active
- Programmable:
- Not Verified
- Memory Type:
- Volatile
- Memory Format:
- SRAM
- Technology:
- SRAM - Asynchronous
- Memory Size:
- 16Mbit
- Memory Organization:
- 2M x 8, 1M x 16
- Memory Interface:
- Parallel
- Clock Frequency:
- -
- Write Cycle Time - Word, Page:
- 55ns
- Access Time:
- 55 ns
- Voltage - Supply:
- 1.65V ~ 2.2V
- Operating Temperature:
- -40°C ~ 85°C (TA)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 48-TSOP I
CY62167G18-55ZXI FAQ
1.How can I place an order for CY62167G18-55ZXI through Aetrix?
Please submit a Request for Quotation (RFQ) for CY62167G18-55ZXI on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for CY62167G18-55ZXI reliable?
The price and inventory of CY62167G18-55ZXI are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for CY62167G18-55ZXI is usually 5 days.
3.What payment methods are accepted for CY62167G18-55ZXI?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for CY62167G18-55ZXI transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for CY62167G18-55ZXI?
CY62167G18-55ZXI orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your CY62167G18-55ZXI order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for CY62167G18-55ZXI?
For technical support, including CY62167G18-55ZXI datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your CY62167G18-55ZXI requirements.
6.How does Aetrix verify that CY62167G18-55ZXI is sourced from the original manufacturer or authorized distributors?
All CY62167G18-55ZXI products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that CY62167G18-55ZXI meets industry standards.
7.What is the process for return or replacement of CY62167G18-55ZXI?
All CY62167G18-55ZXI units undergo pre-shipment inspection (PSI). If there is an issue with CY62167G18-55ZXI, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The CY62167G18-55ZXI part is unused and in its original packaging.
Return procedure for CY62167G18-55ZXI:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
CY62167G18-55ZXI Tags
-
M24C02-WMN6TP
STMicroelectronics
-
AT24C02C-XHM-T
Microchip Technology
-
AT21CS01-STUM10-T
Microchip Technology
-
AT24C02C-SSHM-T
Microchip Technology
-
24LC01BT-I/OT
Microchip Technology
-
M24C02-FMC6TG
STMicroelectronics
-
AT24CS02-SSHM-T
Microchip Technology
-
93LC46BT-I/OT
Microchip Technology
-
AT24C04C-SSHM-T
Microchip Technology
-
24LC01BT-I/SN
Microchip Technology
-
24AA02UIDT-I/OT
Microchip Technology
-
AT24C08C-STUM-T
Microchip Technology
Tech Hub
A technical comparison of level-sensitive latches and edge-triggered flip-flops, covering timing windows, setup and hold limits, master–slave operation, time borrowing, race-through, HDL inference and…
A D latch stores one bit while Enable controls when data can pass. This reference covers gate-level operation, truth tables, transparency, setup and hold timing, LE versus OE, common ICs and practical …
An SR latch stores one bit through cross-coupled feedback. This engineering reference covers NOR and NAND implementations, truth tables, forbidden-state recovery, gated operation, switch debouncing, fa…
Latch circuits retain one bit through feedback. This technical reference covers SR and D latches, truth tables, transparency, timing limits, latch-versus-flip-flop behavior, applications and common log…
An engineering guide to LED driver operation, constant-current and constant-voltage outputs, linear and switching topologies, dimming, IC selection, calculations, replacement compatibility, and fault c…
Operational amplifier guide covering op amp basics, feedback, ideal vs real op amps, common configurations, buffer circuits, offset, bias current, gain-bandwidth, slew rate, rail-to-rail limits and sel…
Jumper cables guide covering safe connection order, red and black clamp placement, final ground connection, cable gauge, length, clamp quality, copper vs CCA cables, jump starter comparison and battery…
LDO regulator guide covering low dropout voltage, power dissipation, thermal design, PSRR, output noise, capacitor stability, adjustable LDO circuits, LDO vs buck converter and datasheet selection chec…
Conditional Access Module guide covering CAM meaning, CI/CI+ interface, smart card authorization, DVB security workflow, TV and set-top box compatibility, internal electronics, ESD protection, connecto…
Guide to electronic component obsolescence covering EOL risk, PCN/PDN notices, last-time buy planning, replacement options, form-fit-function validation, counterfeit risk and BOM lifecycle management.
