Infineon Technologies CY62167G18-55ZXIT

Overview

CY62167G18-55ZXIT from Infineon Technologies (formerly Cypress) is a 16-Mbit MoBL® low-power SRAM with embedded single-bit error-correcting code (ECC), configurable as 1M × 16 or 2M × 8, operating at 55 ns access time across 1.65–2.2 V or 4.5–5.5 V supply rails, and featuring an ERR output pin for real-time ECC event indication in industrial applications such as network packet buffering and medical data acquisition.

For engineers reviewing the CY62167G18-55ZXIT datasheet, CY62167G18-55ZXIT pinout, CY62167G18-55ZXIT application, or CY62167G18-55ZXIT equivalent, this page delivers verified package mapping (48-pin TSOP I), ECC behavior under read cycles, byte-select power-down logic, TTL-compatible I/O timing, and dual-voltage domain operation - all confirmed from Infineon's official Rev. *R datasheet (001-81537).

Technical Context

This SRAM integrates dedicated ECC encode/decode circuitry that detects and corrects single-bit errors on every read access without requiring external logic or software intervention. The ERR pin asserts high during correction events, enabling system-level fault logging or diagnostic flagging.

It supports two chip-enable architectures (single CE or dual CE1/CE2), byte-wide write control via BHE/ BLE, and automatic standby entry when both byte enables are deasserted - independent of CE state - delivering ultra-low 5.5 µA typical standby current. Address range spans A0–A19 (1M×16) or A0–A20 (2M×8) with NC pins reserved for future density expansion.

Key Specifications

Pinout & Package

Package: 48-pin TSOP I (Type I, 12 mm × 20 mm), RoHS-compliant, surface-mount. Pinout validated per Figure 6 (CY62167GE 48-pin TSOP I with ERR) in Infineon datasheet 001-81537 Rev. *R.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar SRAM with ECC applications.

Compared with IS61WV102416BLL-10MLI and R1EX24160AS0C0I#U0, CY62167G18-55ZXIT uniquely provides both hardware ECC and an observable ERR signal - enabling closed-loop error response in safety-aware systems without adding external logic or sacrificing timing determinism.

Availability

CY62167G18-55ZXIT is available at Aetrix Electronics and suitable for industrial PLC data buffering, medical imaging frame storage, telecom packet switching buffers, and avionics health monitoring caches requiring stable component supply, long-term lifecycle assurance, and guaranteed ECC functionality.

Supply support for CY62167G18-55ZXIT includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a global semiconductor leader headquartered in Munich, Germany, specializing in power management, automotive ICs, and memory solutions with ISO/TS 16949 and ISO 9001 certified manufacturing.

CY62167G18-55ZXIT belongs to Infineon's MoBL® (Mobile Bitline) SRAM product line, engineered specifically for ultra-low-power, high-integrity memory in battery-constrained and mission-critical embedded systems.

FAQ

Does CY62167G18-55ZXIT support automatic error correction without host intervention?

Yes. The device performs single-bit error detection and correction autonomously on every read access using on-die ECC circuitry. No host processor action or external logic is required - correction occurs transparently within the SRAM core. The ERR pin signals correction events, but correction itself is fully hardware-managed and does not stall the read cycle.

Can CY62167G18-55ZXIT operate in both 1M × 16 and 2M × 8 configurations on the same physical package?

Yes. Configuration is determined by the BYTE pin: tie to VCC for 1M × 16 mode (standard address A0–A19); tie to VSS for 2M × 8 mode, which activates A20 (pin 45) and disables BHE, BLE, and I/O8–I/O14. This dual-mode flexibility allows one footprint to serve two memory architectures without redesign.

What is the role of the ERR pin, and how should it be terminated?

The ERR pin is an open-drain output that asserts HIGH during single-bit error correction. It must be externally pulled up to VCC via a 4.7 kΩ resistor. If unused, it should be left floating - not tied to VCC or GND - to avoid unintended current paths. Assertion duration matches the read cycle time (55 ns), enabling precise timestamping of correction events.

How does the Byte Power-down feature reduce power consumption independently of chip enable signals?

When both BHE and BLE are deasserted (HIGH), the SRAM automatically enters standby mode - even if CE1/CE2 remain active - disabling internal arrays and reducing ICC to sub-µA levels. This behavior is hardwired in silicon and requires no configuration register access, making it ideal for burst-mode systems where byte enables naturally gate activity between transfers.