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Infineon Technologies CY62167G30-45BVXA
- Part No.:
- CY62167G30-45BVXA
- Manufacturer:
- Infineon Technologies
- Category:
- Memory
- Package:
- 48-VFBGA
- Datasheet:
-
CY62167G30-45BVXA.pdf
- Description:
- IC SRAM 16MBIT PARALLEL 48VFBGA
- Quantity:
- Payment:
- Shipping:
Inventory:1,507
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Product details
Overview
CY62167G30-45BVXA from Cypress Semiconductor is an AEC-Q100 qualified automotive-grade 16-Mbit (1M × 16) static RAM with embedded single-bit error-correcting code (ECC), operating at 45 ns access time, 2.2–3.6 V supply, and -40 °C to +85 °C (Automotive-A grade). It features dual chip-enable (CE1/CE2), byte-level write control (BHE/BLE), and ultra-low standby current (5.5 µA typical). Used in engine control units and ADAS domain controllers for fault-tolerant data buffering.
For engineers reviewing the CY62167G30-45BVXA datasheet, CY62167G30-45BVXA pinout, CY62167G30-45BVXA application, or CY62167G30-45BVXA equivalent, key selection criteria include ECC support for safety-critical memory, TSOP I/VFBGA package compatibility, dual CE timing behavior, and byte power-down capability enabling dynamic power gating in automotive microcontroller subsystems.
Technical Context
The CY62167G30-45BVXA implements a 1M × 16-bit SRAM array with dedicated ECC encode/decode logic that detects and corrects single-bit errors on every read cycle without external intervention. Its dual chip-enable architecture requires CE1 = LOW and CE2 = HIGH for device selection - unlike standard single-CE SRAMs - enabling hierarchical memory mapping in multi-master systems.
It supports two operational modes: full 16-bit width (with BYTE tied to VCC in TSOP I) or reconfigurable 2M × 8-bit mode (BYTE tied to VSS, disabling BHE/BLE and I/O8–I/O14). The "Byte Power Down" feature activates automatic standby when both BHE and BLE are deasserted, independent of CE state - a deterministic low-power entry mechanism critical for ISO 26262 ASIL-B/C subsystems.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Memory Density | 16 Mbit (1,048,576 words × 16 bits); enables compact storage of real-time sensor buffers or firmware scratchpad without external multiplexing. |
| Access Time | 45 ns (max) at -40 °C to +85 °C; ensures deterministic timing margin for 22 MHz bus interfaces in ECU applications. |
| ECC Function | On-die single-bit error correction per 16-bit word; eliminates need for external ECC logic or software overhead in safety-critical reads. |
| Standby Current | 5.5 µA typical / 16 µA max at 3.0 V, 25 °C; meets automotive low-power sleep-state requirements for always-on modules. |
| Supply Voltage | 2.2 V to 3.6 V; compatible with modern 3.3 V automotive power domains and tolerant of battery brownout conditions down to 2.2 V. |
| Operating Temp | -40 °C to +85 °C (Automotive-A grade); qualified per AEC-Q100 Rev G for under-hood and cabin control unit deployment. |
| Data Retention | 1.0 V minimum VCC for data retention; allows graceful degradation during deep sleep without backup capacitor dependency. |
Pinout & Package
Available in Pb-free 48-ball Very Thin Fine-Pitch Ball Grid Array (VFBGA) and 48-pin TSOP I packages. The CY62167G30-45BVXA uses the 48-ball VFBGA variant (package code 'BV'), with 0.5 mm pitch and 7.0 mm × 8.0 mm body size.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| A0–A19 | Address Inputs | 20-bit address bus supporting full 1M-word addressing; A16–A19 unused in 2M×8 mode. |
| I/O0–I/O15 | Bidirectional Data Bus | 16-bit parallel interface; I/O0–I/O7 controlled by BLE, I/O8–I/O15 by BHE for byte-select writes/reads. |
| CE1, CE2 | Dual Chip Enable | Active-Low CE1 AND Active-High CE2 required simultaneously for access; enables selective bank enable in multi-SRAM systems. |
| WE | Write Enable | Active-Low signal initiating write cycle; timing referenced to CE1/CE2 and BHE/BLE assertion. |
| OE | Output Enable | Active-Low control for output buffer enable; HI-Z state entered within 18 ns of OE HIGH (max). |
| BHE, BLE | Byte High/Low Enable | Independent 8-bit write masking; simultaneous deassertion triggers automatic standby regardless of CE state. |
| VCC, VSS | Power Supply | Single 2.2–3.6 V supply with separate ground pins; decoupling required per ball map for noise immunity in EMI-prone environments. |
Key Features
| Feature | Design Value |
|---|---|
| Embedded ECC Logic | Hardware-based SEC (single-error correction) per 16-bit word with no latency penalty or software overhead - essential for ASIL-B memory integrity compliance. |
| Dual Chip-Enable Interface | CE1 (active-Low) and CE2 (active-High) must both be asserted to enable access, enabling hierarchical memory decoding and reducing bus contention in multi-SRAM designs. |
| Byte Power-Down Mode | Automatic transition to ultra-low-power standby (5.5 µA) when BHE and BLE are both deasserted - provides deterministic power gating without CPU intervention. |
| Configurable Data Width | Supports 1M×16 mode (BYTE = VCC) or 2M×8 mode (BYTE = VSS) in TSOP I; VFBGA variant fixed at 1M×16 - simplifies migration across form factors. |
| AEC-Q100 Qualified | Qualified to Grade 2 (-40 °C to +105 °C) and Grade 3 (-40 °C to +125 °C) stress tests; CY62167G30-45BVXA is Automotive-A (Grade 3) rated. |
Applications
| Engine Control Unit (ECU) | Advanced Driver Assistance Systems (ADAS) |
|---|---|
|
Use Scenario: Real-time storage of sensor fusion outputs (radar + camera timestamp-aligned buffers) during active driving cycles. IC Role / Device Role / Timing Role: Fault-tolerant SRAM providing ECC-protected scratchpad memory for MCU-based sensor preprocessing pipelines. Use Value: Prevents silent data corruption in safety-critical decision loops; 45 ns access enables sub-100 ns interrupt response for emergency braking triggers. |
Use Scenario: Storing calibrated lookup tables and runtime configuration parameters for lane-keeping assist (LKA) control algorithms. IC Role / Device Role / Timing Role: Non-volatile-configurable SRAM used as boot-time-initialized parameter store with ECC-checked read integrity. Use Value: Eliminates need for redundant checksum validation in firmware, reducing CPU load by ~12% in 300 MHz Cortex-R5-based ADAS SoCs. |
| Body Control Module (BCM) | Infotainment Head Unit |
|
Use Scenario: Holding persistent session state (door lock status, window position, mirror settings) during vehicle power-down sequences. IC Role / Device Role / Timing Role: Low-leakage SRAM maintaining data integrity during 12 V battery voltage sag below 9 V. Use Value: 1.0 V data retention threshold ensures reliable state hold through cold-cranking events without supplemental backup power. |
Use Scenario: Caching frequently accessed UI assets (font glyphs, icon bitmaps) to reduce NAND flash wear and improve GUI responsiveness. IC Role / Device Role / Timing Role: High-speed SRAM acting as L2 cache between ARM application processor and eMMC storage controller. Use Value: 45 ns random access cuts average asset fetch latency from 85 µs (NAND) to 0.045 µs - enabling 60 fps UI rendering under load. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar automotive SRAM applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| ISSI IS62WV102416BLL-45NLI | No embedded ECC; requires external error detection logic; 45 ns access, same 1M×16 density and -40°C to +85°C rating. | Suitable only where functional safety requirements do not mandate hardware ECC - e.g., non-ASIL infotainment subsystems. | Select when cost sensitivity outweighs ASIL compliance needs and system-level ECC can be implemented in FPGA or MCU firmware. |
| ON Semiconductor NVSRAM NVMFS16M16T045S | Non-volatile SRAM with integrated EEPROM backup; 45 ns SRAM access but 10 ms EEPROM write latency; no on-die ECC. | Used where power-loss data persistence is mandatory (e.g., odometer counters), not just error correction. | Choose only if data retention after complete power removal is required - adds complexity and cost versus pure ECC SRAM use cases. |
Compared with IS62WV102416BLL-45NLI and NVMFS16M16T045S, CY62167G30-45BVXA uniquely delivers hardware ECC without latency penalty or external components, making it the only drop-in solution meeting ISO 26262 ASIL-B memory integrity requirements for real-time control applications.
Availability
CY62167G30-45BVXA is available at Aetrix Electronics and suitable for engine control units, ADAS domain controllers, and body control modules requiring stable component supply across extended automotive lifecycles.
Supply support for CY62167G30-45BVXA includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Cypress Semiconductor (now part of Infineon Technologies) designs high-reliability memory and programmable solutions for automotive, industrial, and IoT applications, with global manufacturing and qualification infrastructure.
CY62167G belongs to Cypress's MoBL® (More Battery Life) SRAM product line, engineered specifically for low-power, AEC-Q100 qualified automotive subsystems demanding ECC, wide temperature operation, and deterministic timing.
FAQ
Does CY62167G30-45BVXA support automatic error correction during read operations?
Yes. The device performs single-bit error correction transparently on every read cycle using on-die ECC logic. No external circuitry or software intervention is required - corrected data appears directly on I/O0–I/O15. It does not support automatic write-back on error detection, per datasheet Note 1.
What is the function of the BYTE pin in CY62167G30-45BVXA?
The BYTE pin is not present on the 48-ball VFBGA package used by CY62167G30-45BVXA. It exists only in the 48-pin TSOP I variant, where tying BYTE to VCC configures 1M×16 mode and tying to VSS enables 2M×8 mode. This pin is NC (no connect) in BV-package devices.
Can CY62167G30-45BVXA operate at 2.5 V supply voltage?
Yes. Its specified operating voltage range is 2.2 V to 3.6 V, and all AC/DC parameters - including 45 ns access time and 5.5 µA standby current - are guaranteed across this range at -40 °C to +85 °C. At 2.5 V, timing remains compliant per datasheet Table on Page 8.
How does the dual chip-enable (CE1/CE2) interface differ from standard SRAMs?
Unlike conventional single-CE SRAMs, CY62167G30-45BVXA requires CE1 = LOW *and* CE2 = HIGH simultaneously to enable access. This dual-signal protocol prevents accidental activation during power-up/down transients and supports hierarchical memory decoding in multi-bank architectures without additional logic gates.
CY62167G30-45BVXA Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Infineon Technologies
- Series:
- MOBL™
- Package/Case:
- 48-VFBGA
- Packaging:
- Tray
- Product Status:
- Active
- Programmable:
- Not Verified
- Memory Type:
- Volatile
- Memory Format:
- SRAM
- Technology:
- SRAM - Asynchronous
- Memory Size:
- 16Mbit
- Memory Organization:
- 1M x 16
- Memory Interface:
- Parallel
- Clock Frequency:
- -
- Write Cycle Time - Word, Page:
- 45ns
- Access Time:
- 45 ns
- Voltage - Supply:
- 2.2V ~ 3.6V
- Operating Temperature:
- -40°C ~ 85°C (TA)
- Grade:
- Automotive
- Qualification:
- AEC-Q100
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 48-VFBGA (6x8)
CY62167G30-45BVXA FAQ
1.How can I place an order for CY62167G30-45BVXA through Aetrix?
Please submit a Request for Quotation (RFQ) for CY62167G30-45BVXA on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for CY62167G30-45BVXA reliable?
The price and inventory of CY62167G30-45BVXA are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for CY62167G30-45BVXA is usually 5 days.
3.What payment methods are accepted for CY62167G30-45BVXA?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for CY62167G30-45BVXA transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for CY62167G30-45BVXA?
CY62167G30-45BVXA orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your CY62167G30-45BVXA order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for CY62167G30-45BVXA?
For technical support, including CY62167G30-45BVXA datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your CY62167G30-45BVXA requirements.
6.How does Aetrix verify that CY62167G30-45BVXA is sourced from the original manufacturer or authorized distributors?
All CY62167G30-45BVXA products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that CY62167G30-45BVXA meets industry standards.
7.What is the process for return or replacement of CY62167G30-45BVXA?
All CY62167G30-45BVXA units undergo pre-shipment inspection (PSI). If there is an issue with CY62167G30-45BVXA, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The CY62167G30-45BVXA part is unused and in its original packaging.
Return procedure for CY62167G30-45BVXA:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
CY62167G30-45BVXA Tags
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