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Infineon Technologies CY62167G30-45BVXAT
- Part No.:
- CY62167G30-45BVXAT
- Manufacturer:
- Infineon Technologies
- Category:
- Memory
- Package:
- 48-VFBGA
- Datasheet:
-
CY62167G30-45BVXAT.pdf
- Description:
- IC SRAM 16MBIT PARALLEL 48VFBGA
- Quantity:
- Payment:
- Shipping:
Inventory:4,831
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Product details
Overview
CY62167G30-45BVXAT from Cypress Semiconductor is an AEC-Q100 qualified automotive-grade 16-Mbit (1M × 16) static RAM with embedded single-bit error-correcting code (ECC), operating at 45 ns access time, 2.2–3.6 V supply, and -40 °C to +85 °C (Automotive-A) temperature range. It features dual chip-enable (CE1/CE2), byte-level write control (BHE/BLE), and ultra-low standby current (5.5 µA typical).
For engineers reviewing the CY62167G30-45BVXAT datasheet, CY62167G30-45BVXAT pinout, CY62167G30-45BVXAT application, or CY62167G30-45BVXAT equivalent, this SRAM supports high-reliability automotive memory subsystems requiring ECC protection, low-power retention, and TSOP I or VFBGA packaging compatibility.
Technical Context
The CY62167G30-45BVXAT implements a dual CE architecture requiring CE1 = LOW and CE2 = HIGH for device selection, enabling hierarchical memory mapping in multi-bank systems. Its embedded ECC logic operates transparently during read cycles, correcting single-bit errors without CPU intervention or additional latency overhead.
It supports two memory configurations: native 1M × 16 mode (BYTE tied to VCC) and reconfigurable 2M × 8 mode (BYTE tied to VSS) in the 48-pin TSOP I package. The "Byte Power Down" feature activates automatic standby when both BHE and BLE are deasserted-regardless of CE state-reducing power to 5.5 µA typical.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Memory Density | 16 Mbit (1,048,576 words × 16 bits); enables compact 2 MB data storage with parallel 16-bit bus interface. |
| Access Time | 45 ns (max) at 3.0 V, 25 °C; ensures deterministic timing for real-time automotive control loops. |
| Supply Voltage | 2.2 V to 3.6 V; compatible with modern low-voltage automotive domain controllers and ASIL-B/C subsystems. |
| Standby Current | 5.5 µA typical / 16.0 µA max (Automotive-A); meets stringent low-power requirements for always-on modules. |
| ECC Function | Single-bit error correction per 16-bit word; detects and corrects transient upsets without software overhead or system interruption. |
| Operating Temp | -40 °C to +85 °C (Automotive-A grade); validated for engine bay proximity, infotainment head units, and ADAS sensor fusion ECUs. |
| Data Retention | 1.0 V minimum VCC; maintains memory contents during brown-out or battery disconnect events. |
Pinout & Package
Package: 48-ball Very Thin Fine-Pitch Ball Grid Array (VFBGA), 6 mm × 8 mm, 0.5 mm pitch, Pb-free, RoHS-compliant.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| A0–A19 | Address Inputs | 20-bit address bus supporting full 1M-word addressing; A19 enables 2M×8 mode when BYTE is asserted low in TSOP I. |
| I/O0–I/O15 | Bidirectional Data Bus | 16-bit parallel interface; I/O0–I/O7 controlled by BLE, I/O8–I/O15 by BHE for byte-select writes/reads. |
| CE1, CE2 | Dual Chip Enable | Active-Low CE1 and Active-High CE2 must both be asserted simultaneously for device selection-prevents partial enable glitches. |
| WE | Write Enable | Active-Low signal initiating write cycle; timing-critical edge aligns with address and data setup/hold windows. |
| OE | Output Enable | Active-Low control for output drivers; enables tristate behavior independent of CE state for bus sharing. |
| BHE, BLE | Byte High/Low Enable | Independent 8-bit write masking; enables efficient partial-word updates and reduces bus contention in mixed-data-width systems. |
| VCC, VSS | Power Supply | Single 2.2–3.6 V core supply; no separate I/O voltage rail required-simplifies PCB power delivery. |
Key Features
| Feature | Design Value |
|---|---|
| AEC-Q100 Qualified | Validated for automotive use across temperature, vibration, and ESD stress-enables direct integration into ASIL-B functional safety domains. |
| Embedded ECC | Hardware-based single-bit error correction per 16-bit word-eliminates need for external ECC logic or software polling. |
| Byte Power Down | Automatic transition to 5.5 µA standby when both BHE and BLE are inactive-reduces leakage without software coordination. |
| Dual Chip-Enable Logic | Requires coordinated CE1 (LOW) and CE2 (HIGH) assertion-prevents spurious activation during power-up or noise transients. |
| 1.0-V Data Retention | Maintains stored data down to 1.0 V VCC-supports fail-safe logging during battery voltage collapse or ignition-off states. |
Applications
| Engine Control Unit (ECU) | Advanced Driver Assistance Systems (ADAS) |
|---|---|
Use Scenario: Real-time storage of sensor fusion buffers, PID controller history, and fault log entries in gasoline/diesel engine management systems. IC Role / Device Role / Timing Role: Primary volatile working memory with ECC-protected data integrity for closed-loop combustion control algorithms. Use Value: Prevents silent data corruption in critical control variables-ensures deterministic response under EMI-rich under-hood environments. | Use Scenario: Temporary frame buffering and object-tracking metadata storage in radar/vision processing modules. IC Role / Device Role / Timing Role: Low-latency scratchpad memory for pre-fusion sensor data alignment prior to FPGA or SoC ingestion. Use Value: 45 ns access time enables sub-millisecond buffer turnaround; ECC prevents misclassification due to bit flips in safety-critical perception pipelines. |
| Infotainment Head Unit | Body Control Module (BCM) |
Use Scenario: Storing UI state, audio codec parameters, and navigation route cache in automotive-grade multimedia systems. IC Role / Device Role / Timing Role: Nonvolatile-equivalent working memory with fast random access and zero-error tolerance for user-facing functions. Use Value: 1.0 V data retention preserves UI context across ignition cycles; low standby current extends battery life during park mode. | Use Scenario: Logging door/window position history, lighting sequence states, and diagnostic trouble codes in centralized vehicle body networks. IC Role / Device Role / Timing Role: Fault-tolerant event buffer supporting ISO 14229 UDS services and flash reprogramming rollback tracking. Use Value: ECC guarantees integrity of stored DTCs and calibration data-even after years of thermal cycling and electrical stress. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar automotive SRAM applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| IS62WV102416BLL-45NLI | No embedded ECC; 45 ns access, 2.5–3.6 V, -40 °C to +85 °C; 48-pin TSOP I only. | Lacks hardware error correction-requires external ECC logic or software mitigation for safety-critical use. | Select when cost sensitivity outweighs ECC requirement and system-level error handling is already implemented. |
| MT48LC16M16A2P-6A:G | Synchronous SDRAM (not SRAM); 16 Mbit, 143 MHz clock, 3.3 V only; requires clock and refresh management. | Higher bandwidth but introduces timing complexity, refresh overhead, and non-deterministic latency-unsuitable for hard real-time control. | Select only for high-throughput streaming buffers where deterministic access is not required and controller supports SDRAM protocol. |
Compared with IS62WV102416BLL-45NLI and MT48LC16M16A2P-6A:G, the CY62167G30-45BVXAT uniquely delivers integrated ECC, true asynchronous operation, and guaranteed 1.0 V data retention-making it the sole choice for ASIL-B compliant memory in safety-critical automotive control nodes.
Availability
CY62167G30-45BVXAT is available at Aetrix Electronics and suitable for engine control units, ADAS sensor fusion modules, and infotainment head units requiring stable component supply across extended automotive product lifecycles.
Supply support for CY62167G30-45BVXAT includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Cypress Semiconductor (now part of Infineon Technologies) designs high-reliability semiconductor solutions for automotive, industrial, and IoT applications, with emphasis on functional safety and long-term supply stability.
The CY62167G series belongs to Cypress's MoBL® (More Battery Life) SRAM product line, engineered specifically for automotive memory subsystems demanding ECC, ultra-low standby power, and AEC-Q100 qualification.
FAQ
Does CY62167G30-45BVXAT support automatic error correction during read operations?
Yes. The device performs transparent single-bit error correction on every read access using embedded ECC circuitry. No external logic or software intervention is required-the corrected 16-bit word appears directly on I/O0–I/O15. It does not support automatic write-back on error detection, per datasheet Note 1.
Can CY62167G30-45BVXAT operate in 2M × 8 configuration?
Yes-but only in the 48-pin TSOP I package. When the BYTE pin is tied to VSS, the device maps A19 as A20 and operates as 2M × 8. In this mode, BHE, BLE, and I/O8–I/O14 are unused. The VFBGA variant (like BVXAT) supports only 1M × 16 configuration.
What is the significance of the "Byte Power Down" feature?
When both BHE and BLE are deasserted, the device enters ultra-low-power standby (5.5 µA typical) regardless of CE1/CE2 state. This enables dynamic power gating at the byte level-ideal for partial-memory sleep in multi-threaded automotive firmware without requiring full chip disable coordination.
Is CY62167G30-45BVXAT pin-compatible with standard 48-pin TSOP I SRAMs?
No. While it uses the same 48-pin TSOP I footprint, its dual CE architecture (CE1/CE2), BYTE pin, and ECC-related internal logic differ from conventional single-CE SRAMs. Direct replacement requires board-level signal routing changes and firmware validation of CE timing and byte-enable behavior.
CY62167G30-45BVXAT Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Infineon Technologies
- Series:
- MOBL™
- Package/Case:
- 48-VFBGA
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- Programmable:
- Not Verified
- Memory Type:
- Volatile
- Memory Format:
- SRAM
- Technology:
- SRAM - Asynchronous
- Memory Size:
- 16Mbit
- Memory Organization:
- 1M x 16
- Memory Interface:
- Parallel
- Clock Frequency:
- -
- Write Cycle Time - Word, Page:
- 45ns
- Access Time:
- 45 ns
- Voltage - Supply:
- 2.2V ~ 3.6V
- Operating Temperature:
- -40°C ~ 85°C (TA)
- Grade:
- Automotive
- Qualification:
- AEC-Q100
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 48-VFBGA (6x8)
CY62167G30-45BVXAT FAQ
1.How can I place an order for CY62167G30-45BVXAT through Aetrix?
Please submit a Request for Quotation (RFQ) for CY62167G30-45BVXAT on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for CY62167G30-45BVXAT reliable?
The price and inventory of CY62167G30-45BVXAT are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for CY62167G30-45BVXAT is usually 5 days.
3.What payment methods are accepted for CY62167G30-45BVXAT?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for CY62167G30-45BVXAT transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for CY62167G30-45BVXAT?
CY62167G30-45BVXAT orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your CY62167G30-45BVXAT order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for CY62167G30-45BVXAT?
For technical support, including CY62167G30-45BVXAT datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your CY62167G30-45BVXAT requirements.
6.How does Aetrix verify that CY62167G30-45BVXAT is sourced from the original manufacturer or authorized distributors?
All CY62167G30-45BVXAT products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that CY62167G30-45BVXAT meets industry standards.
7.What is the process for return or replacement of CY62167G30-45BVXAT?
All CY62167G30-45BVXAT units undergo pre-shipment inspection (PSI). If there is an issue with CY62167G30-45BVXAT, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The CY62167G30-45BVXAT part is unused and in its original packaging.
Return procedure for CY62167G30-45BVXAT:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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