Infineon Technologies CY62167G30-45BVXI

Overview

CY62167G30-45BVXI from Infineon Technologies (formerly Cypress) is a 16-Mbit MoBL® low-power SRAM with embedded single-bit error-correcting code (ECC), configurable as 1M × 16 or 2M × 8, operating at 45 ns access time over 4.5–5.5 V, featuring TTL-compatible I/Os, ERR pin for error indication, and ultra-low 5.5 µA typical standby current. It targets mission-critical memory subsystems in industrial controllers and telecom line cards where data integrity and power efficiency are essential.

For engineers reviewing the CY62167G30-45BVXI datasheet, CY62167G30-45BVXI pinout, CY62167G30-45BVXI application, or CY62167G30-45BVXI equivalent, key selection factors include dual-voltage support (4.5–5.5 V), ECC-enabled read reliability, byte-selectable write architecture (BHE/ BLE), 48-ball VFBGA package compatibility, and industrial-grade temperature range (–40 °C to +85 °C).

Technical Context

This SRAM implements a synchronous, CMOS-based memory array with dedicated ECC encode/decode logic that detects and corrects single-bit errors on every read cycle without requiring external circuitry. Its dual chip enable (CE1/CE2) interface supports hierarchical memory banking, while the ERR output asserts high only during active correction events - not during detection-only scenarios.

The device integrates Byte Power-down logic: when both BHE and BLE are deasserted, it enters standby mode regardless of CE state, enabling dynamic power gating per memory access granularity. Address decoding covers A0–A19 (1M×16 mode) or A0–A20 (2M×8 mode), with pin 45 repurposed as A20 in 8-bit configuration and I/O8–I/O14 unused.

Key Specifications

Pinout & Package

Package: 48-ball Very Thin Fine-Pitch Ball Grid Array (VFBGA), RoHS-compliant, 10 mm × 12 mm body, 0.8 mm ball pitch, bottom-side thermal pad optional.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar ECC SRAM applications.

Compared with IS62WV1288BLL-45NLI and R1EX24128ASAS-45, CY62167G30-45BVXI uniquely delivers parallel 16-bit random access, hardware ECC, and 45 ns performance within a 5 V industrial ecosystem - making it irreplaceable for deterministic, high-reliability memory buffering where bit errors must be corrected transparently and instantly.

Availability

CY62167G30-45BVXI is available at Aetrix Electronics and suitable for industrial PLCs, telecom line cards, medical imaging buffers, and avionics data recorders requiring stable component supply, long-term lifecycle support, and guaranteed ECC functionality.

Supply support for CY62167G30-45BVXI includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a global semiconductor leader headquartered in Munich, Germany, specializing in power management, automotive ICs, and memory solutions acquired through the Cypress Semiconductor merger.

CY62167G30-45BVXI belongs to the MoBL® (Mobile Bit-Low-power) SRAM product line, designed specifically for high-reliability, low-power embedded systems where data integrity, fast random access, and industrial temperature resilience are mandatory.

FAQ

Does CY62167G30-45BVXI support automatic error correction without host intervention?

Yes. The device performs single-bit error correction autonomously during every read cycle using on-die ECC logic. When correction occurs, the ERR pin asserts high. No external controller action or software routine is required - the corrected data appears on I/O lines transparently, and ERR serves only as an asynchronous status indicator.

Can CY62167G30-45BVXI operate in 2M × 8 mode on a 48-ball VFBGA package?

No. The 2M × 8 configuration requires A20 as an additional address line, which is only available on the 48-pin TSOP I package (pin 45). The VFBGA variant (CY62167G30-45BVXI) is fixed in 1M × 16 mode with A0–A19 only; A20 is not bonded out and remains inaccessible.

What is the function of the BYTE pin on CY62167G30-45BVXI?

The BYTE pin is not present on the VFBGA package of CY62167G30-45BVXI. It exists only on the TSOP I variant and determines memory organization: tied to VCC for 1M × 16 mode, or VSS for 2M × 8 mode. This pin is omitted in the VFBGA layout - the device is factory-configured for 1M × 16 operation.

Is the ERR pin actively driven or open-drain?

The ERR pin is an open-drain output. It requires an external pull-up resistor (typically 4.7 kΩ to VCC) to assert HIGH during single-bit correction events. When inactive, ERR floats high-impedance; no internal pull-up is provided. This allows wired-OR connection with other fault indicators in system-level monitoring buses.