Infineon Technologies CY62167G30-45BVXIT

Overview

CY62167G30-45BVXIT from Infineon Technologies (formerly Cypress) is a 16-Mbit MoBL® SRAM with embedded single-bit error-correcting code (ECC), configurable as 1M × 16 or 2M × 8, operating at 45 ns access time across 4.5–5.5 V supply, featuring ERR pin for real-time ECC status indication and ultra-low 5.5 µA typical standby current. It serves in industrial control memory buffers requiring data integrity under voltage stress.

For engineers reviewing the CY62167G30-45BVXIT datasheet, CY62167G30-45BVXIT pinout, CY62167G30-45BVXIT application, or CY62167G30-45BVXIT equivalent, key selection criteria include dual-voltage support (1.65–2.2 V / 4.5–5.5 V), byte-selectable write capability via BHE/ BLE, TTL-compatible I/Os, and deterministic ERR assertion on single-bit correction events.

Technical Context

This SRAM integrates dedicated ECC encode/decode logic within the memory array, correcting single-bit errors on read without external logic or software intervention. Its Byte Power-down feature enables automatic transition to standby mode when both BHE and BLE are deasserted - independent of CE state - reducing dynamic leakage during partial-byte idle cycles.

The device supports two chip-enable configurations: single CE (CY62167GE variant) or dual CE1/CE2 (CY62167G), with pinout variants across 48-ball VFBGA and 48-pin TSOP I packages. The "30" in the part number denotes 3.0-V nominal operation (though actual V_CC range is 4.5–5.5 V or 1.65–2.2 V), and "BVXI" indicates Pb-free VFBGA package with industrial temperature grade (–40°C to +85°C).

Key Specifications

Pinout & Package

Package: 48-ball Very Thin Fine-Pitch Ball Grid Array (VFBGA), Pb-free, industrial-grade (–40°C to +85°C). Pinout corresponds to CY62167GE dual-chip-enable configuration with ERR output.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar SRAM-with-ECC applications.

Compared with IS61WV102416BLL-10MLI and MT45W8MW16BGX-5 IT:B, CY62167G30-45BVXIT delivers deterministic, zero-overhead ECC correction in a pin-compatible SRAM interface - critical for real-time systems where latency predictability and firmware simplicity outweigh raw density or cost-per-bit advantages.

Availability

CY62167G30-45BVXIT is available at Aetrix Electronics and suitable for industrial PLC memory buffers, medical diagnostic data loggers, avionics sensor interface modules, and railway signaling controllers requiring stable component supply across extended product lifecycles.

Supply support for CY62167G30-45BVXIT includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies acquired Cypress Semiconductor in 2020 and maintains the MoBL® SRAM portfolio for high-reliability, low-power memory applications in industrial and automotive systems.

CY62167G30-45BVXIT belongs to the MoBL® (Mobile Binary Logic) SRAM family, designed specifically for battery-sensitive and ECC-critical embedded systems requiring deterministic timing and multi-voltage interoperability.

FAQ

Does CY62167G30-45BVXIT support automatic error correction without host intervention?

Yes. The device performs single-bit error detection and correction autonomously on every read cycle using on-die ECC logic. When a correctable error occurs, the ERR pin asserts HIGH; no host processor action or firmware routine is required to trigger or complete correction. The corrected data appears on the I/O bus transparently.

Can CY62167G30-45BVXIT operate at 3.3 V?

No. This part is specified only for two discrete V_CC ranges: 1.65–2.2 V and 4.5–5.5 V. Operation at 3.3 V is outside its qualified operating range and violates absolute maximum ratings. For 3.3-V systems, consider the CY62167G30-55BVXIT variant (55 ns, 3.0–3.6 V range) or alternate families.

What is the function of the BYTE pin in the VFBGA package?

The BYTE pin is not present in the 48-ball VFBGA package (BVXIT); it exists only in the 48-pin TSOP I variant. In TSOP, tying BYTE to VCC configures 1M×16 mode, while tying it to VSS enables 2M×8 mode with A20 repurposed from I/O15. VFBGA uses fixed pin mapping per datasheet Figure 3/4.

Is the ERR pin actively driven or open-drain?

The ERR pin is an open-drain output. It requires an external pull-up resistor (typically 4.7 kΩ to V_CC) to assert HIGH during single-bit error correction. When no error is detected, ERR remains in high-impedance state - compatible with wired-OR fault-bus architectures in multi-SRAM systems.