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Infineon Technologies CY62167G30-45ZXA

Part No.:
CY62167G30-45ZXA
Manufacturer:
Infineon Technologies
Category:
Memory
Package:
48-TFSOP (0.724", 18.40mm Width)
Datasheet:
AetrixCY62167G30-45ZXA.pdf
Description:
IC SRAM 16MBIT PARALLEL 48TSOP I
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:4,091

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Product details

Overview

CY62167G30-45ZXA from Cypress Semiconductor is an AEC-Q100 qualified automotive-grade 16-Mbit (1M × 16-bit) static RAM with embedded single-bit error-correcting code (ECC), operating at 45 ns access time, 2.2–3.6 V supply, and -40 °C to +85 °C (Automotive-A) temperature range. It features dual chip-enable (CE1/CE2), byte-level control via BHE/BLE, and ultra-low standby current (5.5 µA typical). Used in engine control units and ADAS domain controllers where data integrity and low-power retention are critical.

For engineers reviewing the CY62167G30-45ZXA datasheet, CY62167G30-45ZXA pinout, CY62167G30-45ZXA application, or CY62167G30-45ZXA equivalent, key selection considerations include ECC support for safety-critical memory, dual CE timing compatibility, TSOP I vs. VFBGA package trade-offs, and byte power-down behavior under BHE/BLE deassertion.

Technical Context

The CY62167G30-45ZXA implements a 1M × 16-bit SRAM array with dedicated ECC encode/decode logic that detects and corrects single-bit errors on read, but does not support automatic write-back on error detection. Its dual chip-enable architecture requires CE1 = LOW and CE2 = HIGH for device selection, enabling hierarchical memory mapping in multi-chip systems.

It supports two operational modes: standard 1M × 16-bit configuration (BYTE tied to VCC) and 2M × 8-bit mode (BYTE tied to VSS) in the 48-pin TSOP I package. The "Byte Power Down" feature activates when both BHE and BLE are deasserted, forcing automatic entry into standby regardless of CE state-enabling fine-grained power gating per memory access granularity.

Key Specifications

Parameter Value and Actual Design Meaning
Memory Density 16 Mbit (1,048,576 words × 16 bits); enables compact storage for firmware buffers and real-time log tables in ECUs.
Access Time 45 ns max (Automotive-A grade); ensures deterministic timing for 22 MHz synchronous bus interfaces without wait states.
Supply Voltage 2.2 V to 3.6 V; compatible with automotive 3.3 V domains and tolerant of battery voltage sag down to 2.2 V.
Standby Current 5.5 µA typical / 16 µA max at +85 °C; reduces quiescent power in always-on modules like CAN gateways.
ECC Function Single-bit error correction per 16-bit word; satisfies ASIL-B functional safety requirements without external logic.
Data Retention 1.0 V minimum VCC; maintains memory contents during deep sleep or brown-out conditions below normal operating voltage.
Operating Temp -40 °C to +85 °C (Automotive-A); validated for under-hood and cabin-mounted control units per AEC-Q100 Rev G.

Pinout & Package

Package: 48-pin TSOP I (Type I, 12 mm × 20 mm, 0.5 mm pitch), RoHS-compliant, Pb-free. Pin 1 marked by notch/dot; pin 45 functions as A20 in 2M × 8 mode.

Pin/Terminal Circuit Role Design Meaning
CE1, CE2 Dual chip-enable inputs Both required active (CE1 = LOW, CE2 = HIGH) for device selection; enables bank isolation in multi-SRAM systems.
BHE, BLE Byte high/low enable BHE controls I/O8–I/O15; BLE controls I/O0–I/O7; independent byte writes reduce bus contention and power.
WE Write enable LOW-active; initiates write cycle only when CE1/CE2 and at least one byte enable are asserted.
OE Output enable LOW-active; places I/O0–I/O15 in HI-Z when HIGH, allowing shared bus operation with other peripherals.
A0–A19 Address inputs 20-bit address bus supports full 1M-word addressing; A19 unused in 2M × 8 mode (pin 45 becomes A20).
I/O0–I/O15 Bidirectional data bus 16-bit parallel interface; TTL-compatible levels simplify interfacing with microcontrollers and ASICs.

Key Features

Feature Design Value
Embedded ECC On-die single-bit error correction per 16-bit word eliminates need for external ECC logic or software overhead.
Byte Power Down Automatic transition to standby when BHE and BLE are both deasserted-enables per-access power gating without CE manipulation.
Dual Chip Enable Independent CE1/CE2 logic allows hierarchical memory decoding and avoids bus contention in multi-device configurations.
Configurable Organization Hardware-selectable 1M × 16-bit (BYTE = VCC) or 2M × 8-bit (BYTE = VSS) mode increases design flexibility across platform variants.
Low-Voltage Data Retention Maintains stored data at 1.0 V VCC, supporting fail-safe logging during power collapse events in automotive systems.

Applications

Engine Control Unit (ECU) Advanced Driver Assistance Systems (ADAS)

Use Scenario: Real-time storage of sensor fusion outputs and actuator command history for closed-loop torque control.

IC Role / Device Role / Timing Role: High-reliability scratchpad memory with ECC-protected buffer for transient fault resilience during combustion cycles.

Use Value: Prevents single-event upsets from corrupting throttle or ignition timing data-meeting ISO 26262 ASIL-B diagnostic coverage targets.

Use Scenario: Frame buffering for radar pre-processing pipelines in 77 GHz front-end modules.

IC Role / Device Role / Timing Role: Low-latency, deterministic-access memory for time-critical DSP kernels running on automotive SoCs.

Use Value: 45 ns access time enables zero-wait-state operation with 22 MHz AXI-lite or AHB buses used in radar signal processors.

Body Control Module (BCM) Infotainment Head Unit

Use Scenario: Storing door lock status, window position, and lighting configuration across ignition cycles.

IC Role / Device Role / Timing Role: Non-volatile shadow RAM with 1.0 V data retention for battery-backed parameter storage.

Use Value: Eliminates need for external backup capacitors or EEPROM wear leveling-reducing BOM cost and board space.

Use Scenario: Boot-time firmware decompression buffer and runtime GUI asset caching in Linux-based head units.

IC Role / Device Role / Timing Role: High-speed parallel SRAM interfaced directly to ARM Cortex-A application processor's SDRAM controller.

Use Value: Dual CE architecture allows seamless interleaving with other memory-mapped peripherals without arbitration logic.

Equivalent & Alternatives

The following parts are listed as comparable options for similar automotive SRAM applications.

Alternative Part Technical Difference Application Difference Selection Advice
ISSI IS62WV102416BLL-45NLI No embedded ECC; 45 ns access, 2.5–3.6 V, -40 °C to +85 °C; 48-pin TSOP I package. Lacks hardware ECC-requires software-based error detection or external logic for ASIL-B compliance. Select when ECC is handled at system level and cost sensitivity outweighs safety certification effort.
ON Semiconductor NVSRAM NB16L16V45Z Non-volatile SRAM with integrated EEPROM backup; 45 ns, 3.0–3.6 V, -40 °C to +85 °C; no BHE/BLE pins. Provides automatic data retention on power loss but lacks byte-level write control and dual CE architecture. Select when persistent storage without external backup power is mandatory, and byte masking is not required.

Compared with IS62WV102416BLL-45NLI and NB16L16V45Z, CY62167G30-45ZXA uniquely delivers on-die ECC, dual CE timing, and byte power-down-all in a single 48-pin TSOP I footprint-making it optimal for ASIL-B memory subsystems requiring deterministic latency and minimal external components.

Availability

CY62167G30-45ZXA is available at Aetrix Electronics and suitable for engine control units, ADAS domain controllers, and body control modules requiring stable component supply, long-term automotive lifecycle support, and AEC-Q100 qualification.

Supply support for CY62167G30-45ZXA includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Cypress Semiconductor (now part of Infineon Technologies) designs high-reliability memory and programmable solutions for automotive, industrial, and IoT applications, with focus on functional safety and low-power integration.

CY62167G belongs to Cypress's MoBL® (More Battery Life) SRAM product line, engineered specifically for automotive electronics demanding AEC-Q100 qualification, ECC protection, and sub-10 µA standby current in harsh environments.

FAQ

Does CY62167G30-45ZXA support automatic error correction on write operations?

No. The embedded ECC corrects single-bit errors only during read operations. The device does not perform automatic write-back or error injection correction on writes, as explicitly stated in Note 1 of the datasheet. Error detection occurs on read; corrected data is output, but the original memory location remains unmodified unless rewritten by system firmware.

Can CY62167G30-45ZXA operate in 2M × 8-bit mode using the 48-pin TSOP I package?

Yes. When the BYTE pin is tied to VSS, the device configures as a 2M × 8-bit SRAM. In this mode, pin 45 becomes address line A20, and I/O8–I/O15, BHE, and BLE are unused. The datasheet confirms this behavior on page 4 (Pin Configurations) and in the Product Portfolio table on page 4.

What is the role of the dual chip-enable (CE1/CE2) architecture?

CE1 and CE2 function as complementary enables: the device activates only when CE1 is LOW and CE2 is HIGH. This architecture prevents partial selection glitches and enables hierarchical decoding-e.g., CE1 driven by a higher-order address decoder and CE2 by a chip-select signal-improving noise immunity in automotive wiring harnesses.

How does the Byte Power Down feature interact with chip-enable signals?

When both BHE and BLE are deasserted (HIGH), the device enters standby mode *regardless* of CE1/CE2 state-overriding chip-enable control. This allows power gating based on data bus activity rather than address decoding, reducing dynamic power in burst-mode applications like video frame buffering where byte enables reflect actual data width usage.

CY62167G30-45ZXA Specifications

Product attributes
Attribute value
Manufacturer:
Infineon Technologies
Series:
MOBL™
Package/Case:
48-TFSOP (0.724", 18.40mm Width)
Packaging:
Tray
Product Status:
Active
Programmable:
Not Verified
Memory Type:
Volatile
Memory Format:
SRAM
Technology:
SRAM - Asynchronous
Memory Size:
16Mbit
Memory Organization:
1M x 16
Memory Interface:
Parallel
Clock Frequency:
-
Write Cycle Time - Word, Page:
45ns
Access Time:
45 ns
Voltage - Supply:
2.2V ~ 3.6V
Operating Temperature:
-40°C ~ 85°C (TA)
Grade:
Automotive
Qualification:
AEC-Q100
Mounting Type:
Surface Mount
Supplier Device Package:
48-TSOP I

CY62167G30-45ZXA FAQ

1.How can I place an order for CY62167G30-45ZXA through Aetrix?

Please submit a Request for Quotation (RFQ) for CY62167G30-45ZXA on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for CY62167G30-45ZXA reliable?

The price and inventory of CY62167G30-45ZXA are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for CY62167G30-45ZXA is usually 5 days.

3.What payment methods are accepted for CY62167G30-45ZXA?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for CY62167G30-45ZXA transactions.

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4.How is shipping managed for CY62167G30-45ZXA?

CY62167G30-45ZXA orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your CY62167G30-45ZXA order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for CY62167G30-45ZXA?

For technical support, including CY62167G30-45ZXA datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your CY62167G30-45ZXA requirements.

6.How does Aetrix verify that CY62167G30-45ZXA is sourced from the original manufacturer or authorized distributors?

All CY62167G30-45ZXA products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that CY62167G30-45ZXA meets industry standards.

7.What is the process for return or replacement of CY62167G30-45ZXA?

All CY62167G30-45ZXA units undergo pre-shipment inspection (PSI). If there is an issue with CY62167G30-45ZXA, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The CY62167G30-45ZXA part is unused and in its original packaging.

Return procedure for CY62167G30-45ZXA:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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