Infineon Technologies CY62167G30-55BVXE

Overview

CY62167G30-55BVXE from Cypress Semiconductor is an AEC-Q100 qualified automotive-grade 16-Mbit (1M × 16) static RAM with embedded single-bit error-correcting code (ECC), operating at 55 ns access time over –40 °C to +125 °C, with 2.2–3.6 V supply and ultra-low 5.5 µA typical standby current. It supports dual chip-enable (CE1/CE2) and byte-select writes via BHE/BLE for memory subsystems in engine control units and ADAS domain controllers.

For engineers reviewing the CY62167G30-55BVXE datasheet, CY62167G30-55BVXE pinout, CY62167G30-55BVXE application, or CY62167G30-55BVXE equivalent, key selection criteria include ECC-enabled data integrity, automotive temperature grade (E), VFBGA-48 package compatibility, and byte-power-down capability for low-power memory retention in safety-critical ECUs.

Technical Context

This SRAM implements a MoBL (Mobile Low Power) CMOS architecture with dedicated ECC encode/decode logic adjacent to the 1M × 16-bit RAM array, correcting single-bit errors on read without automatic write-back. The dual CE interface requires CE1 = LOW and CE2 = HIGH for device selection, decoupling chip enable from output enable (OE) and write enable (WE) timing paths.

Byte power-down is triggered when both BHE and BLE are deasserted, forcing automatic transition to ISB1/ISB2 standby regardless of CE state-enabling dynamic power gating per memory access granularity. The device supports two configurations: native 1M × 16 mode (BYTE tied to VCC) and 2M × 8 mode (BYTE tied to VSS) in TSOP I, though this variant (VFBGA) is fixed as 1M × 16.

Key Specifications

Pinout & Package

Package: 48-ball Very Thin Fine-Pitch Ball Grid Array (VFBGA), 6 mm × 8 mm, 0.5 mm pitch, Pb-free, RoHS-compliant.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar automotive SRAM applications.

Compared with IS62WV102416BLL-55BLI and N25S80A-55G, CY62167G30-55BVXE uniquely delivers AEC-Q100 Grade 0 qualification, embedded ECC, and sub-10 µA standby in a single monolithic die-making it optimal for ASIL-B memory subsystems where integrity, temperature resilience, and ultra-low quiescent power are jointly required.

Availability

CY62167G30-55BVXE is available at Aetrix Electronics and suitable for engine control units, ADAS domain controllers, and electric power steering modules requiring stable component supply across extended automotive lifecycles.

Supply support for CY62167G30-55BVXE includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Cypress Semiconductor (now part of Infineon Technologies) designs high-reliability memory and microcontroller solutions for automotive, industrial, and IoT applications, with core expertise in low-power SRAM and programmable system-on-chip architectures.

CY62167G belongs to Cypress's Automotive MoBL SRAM product line, engineered specifically for safety-critical vehicle subsystems demanding AEC-Q100 qualification, ECC data integrity, and ultra-low power consumption across extreme temperature ranges.

FAQ

Does CY62167G30-55BVXE support automatic error correction during write operations?

No. The embedded ECC logic corrects single-bit errors only during read operations. The device does not perform automatic write-back or error correction on writes-data written is stored as-is, and ECC encoding occurs transparently on read path. This design minimizes write latency and avoids unintended data modification during high-frequency updates.

Can CY62167G30-55BVXE operate in 2M × 8 configuration?

No. The CY62167G30-55BVXE variant uses the 48-ball VFBGA package, which lacks the BYTE pin required for 2M × 8 mode. Only the 48-pin TSOP I version supports reconfiguration via BYTE pin tie-off; this VFBGA part is fixed at 1M × 16 organization with A0–A19 addressing.

What is the role of the dual chip-enable (CE1/CE2) interface?

CE1 (active-low) and CE2 (active-high) must be asserted simultaneously to select the device. This dual-signal requirement prevents spurious activation from noise or ground bounce on a single enable line-enhancing robustness in electrically noisy automotive environments where EMI could falsely trigger conventional single CE inputs.

How does the Byte Power-Down feature reduce system power?

When both BHE and BLE are deasserted, the device enters ISB1 standby mode (5.5 µA typical) even if CE1/CE2 remain active. This allows microcontrollers to gate memory access at the byte level-e.g., disabling upper byte during 8-bit transfers-cutting dynamic power without requiring full chip deselect and re-enable sequences.